STRANGIO, Sebastiano
 Distribuzione geografica
Continente #
NA - Nord America 2.765
EU - Europa 341
AS - Asia 108
Continente sconosciuto - Info sul continente non disponibili 1
Totale 3.215
Nazione #
US - Stati Uniti d'America 2.764
IT - Italia 125
UA - Ucraina 75
CN - Cina 54
DE - Germania 40
SE - Svezia 30
TR - Turchia 19
FI - Finlandia 18
GB - Regno Unito 17
IE - Irlanda 13
IN - India 12
VN - Vietnam 11
JP - Giappone 5
AT - Austria 4
FR - Francia 4
SG - Singapore 3
BG - Bulgaria 2
CH - Svizzera 2
GR - Grecia 2
PH - Filippine 2
RO - Romania 2
BE - Belgio 1
BN - Brunei Darussalam 1
CA - Canada 1
EE - Estonia 1
ES - Italia 1
EU - Europa 1
HK - Hong Kong 1
HR - Croazia 1
NL - Olanda 1
RS - Serbia 1
RU - Federazione Russa 1
Totale 3.215
Città #
Fairfield 190
Woodbridge 164
Chandler 128
Houston 122
Ashburn 100
Seattle 81
Ann Arbor 78
Wilmington 70
Cambridge 52
Udine 49
Dearborn 43
Jacksonville 39
Milan 20
Izmir 19
Beijing 17
Dublin 13
Princeton 13
Des Moines 11
Dong Ket 11
Boardman 8
San Diego 8
Nanjing 7
Helsinki 6
Pesaro 6
Chengdu 5
Falls Church 5
Pune 5
Trieste 5
Edinburgh 4
Guangzhou 4
Nanchang 4
Vienna 4
Bangalore 3
Catania 3
London 3
Mountain View 3
New York 3
Phoenix 3
Singapore 3
Wuhan 3
Frankfurt am Main 2
Hebei 2
Hefei 2
Jinan 2
Licata 2
Morges 2
Munich 2
Norwalk 2
Nuremberg 2
Ogden 2
Osaka 2
Paris 2
Redwood City 2
Serra 2
Simi Valley 2
Sofia 2
Amsterdam 1
Bandar Seri Begawan 1
Belgrade 1
Brussels 1
Central District 1
Changsha 1
Chions 1
Chongqing 1
Cormeilles-en-Parisis 1
Diecimo 1
Fiume Veneto 1
General Trias 1
Hamm 1
Islington 1
Kolkata 1
Lipa City 1
Los Angeles 1
Madrid 1
Montreal 1
Napoli 1
New Bedfont 1
Pignone 1
Portsmouth 1
Rende 1
Rome 1
Taizhou 1
Tallinn 1
Tokyo 1
Wenzhou 1
Zagreb 1
Totale 1.377
Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.624
Early assessment of tunnel-FET for energy-efficient logic circuits 160
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 155
Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations 146
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 145
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 138
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 134
Experimental characterization of the Static Noise Margins of strained Silicon complementary Tunnel-FET SRAM 130
Performance analysis of different SRAM cell topologies employing tunnel-FETs 124
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 123
Digital and analog TFET circuits: Design and benchmark 113
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 105
Mixed device-circuit simulations of 6T/8T SRAM cells employing tunnel-FETs 95
Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors 93
Totale 3.285
Categoria #
all - tutte 6.120
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.120


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020525 0 17 35 86 36 77 83 66 62 30 6 27
2020/2021283 3 31 0 30 7 46 16 20 52 14 37 27
2021/2022165 9 12 13 6 3 8 9 3 2 19 61 20
2022/2023260 15 26 2 47 23 61 0 31 33 2 18 2
2023/202449 9 2 3 0 7 11 5 5 2 3 0 2
2024/20251.488 1.333 155 0 0 0 0 0 0 0 0 0 0
Totale 3.285