DE MICHIELIS, Marco
DE MICHIELIS, Marco
DIEG - DIPARTIMENTO DI INGEGNERIA ELETTRICA, GESTIONALE E MECCANICA (attivo dal 01/01/1900 al 31/12/2015)
An efficient, mixed semiclassical/quantum mechanical model to simulate planar and wire nano-transistors
2007-01-01 Selmi, Luca; Palestri, Pierpaolo; Esseni, David; Lucci, Luca; DE MICHIELIS, Marco
Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs
2007-01-01 DE MICHIELIS, Marco; Esseni, David; Driussi, Francesco
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks
2010-01-01 Bufler, F. M.; AUBRY FORTUNA, V; Bournel, A; Braccioli, M; Dollfus, P; Esseni, David; Fiegna, C; Gamizk, F; DE MICHIELIS, Marco; Palestri, Pierpaolo; SAINT MARTIN, J; Sampedrok, C; Sangiorgi, E; Selmi, Luca; Toniutti, Paolo
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study
2008-01-01 Conzatti, Francesco; DE MICHIELIS, Marco; Esseni, David; Palestri, Pierpaolo
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study
2009-01-01 Conzatti, Francesco; DE MICHIELIS, Marco; Esseni, David; Palestri, Pierpaolo
Extraction of h parameter characterising ueff against Eeff curves in strained Si nMOS devices
2008-01-01 Bennamane, K; DE MICHIELIS, Marco; Ghibaudo, G; Esseni, David
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks
2012-01-01 Toniutti, Paolo; Palestri, Pierpaolo; Esseni, David; Driussi, Francesco; DE MICHIELIS, Marco; Selmi, Luca
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors
2011-01-01 DE MICHIELIS, Marco; Conzatti, Francesco; Esseni, David; Selmi, Luca
Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach
2009-01-01 DE MICHIELIS, Marco; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Trade-off between Electron Velocity and Density of States in Ballistic nano-MOSFETs
2005-01-01 DE MICHIELIS, Marco; Driussi, Francesco; Esseni, David
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics
2010-01-01 Toniutti, Paolo; DE MICHIELIS, Marco; Palestri, Pierpaolo; Driussi, Francesco; Esseni, David; Selmi, Luca
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| An efficient, mixed semiclassical/quantum mechanical model to simulate planar and wire nano-transistors | 1-gen-2007 | Selmi, Luca; Palestri, Pierpaolo; Esseni, David; Lucci, Luca; DE MICHIELIS, Marco | |
| Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs | 1-gen-2007 | DE MICHIELIS, Marco; Esseni, David; Driussi, Francesco | |
| Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks | 1-gen-2010 | Bufler, F. M.; AUBRY FORTUNA, V; Bournel, A; Braccioli, M; Dollfus, P; Esseni, David; Fiegna, C; Gamizk, F; DE MICHIELIS, Marco; Palestri, Pierpaolo; SAINT MARTIN, J; Sampedrok, C; Sangiorgi, E; Selmi, Luca; Toniutti, Paolo | |
| Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study | 1-gen-2008 | Conzatti, Francesco; DE MICHIELIS, Marco; Esseni, David; Palestri, Pierpaolo | |
| Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study | 1-gen-2009 | Conzatti, Francesco; DE MICHIELIS, Marco; Esseni, David; Palestri, Pierpaolo | |
| Extraction of h parameter characterising ueff against Eeff curves in strained Si nMOS devices | 1-gen-2008 | Bennamane, K; DE MICHIELIS, Marco; Ghibaudo, G; Esseni, David | |
| On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks | 1-gen-2012 | Toniutti, Paolo; Palestri, Pierpaolo; Esseni, David; Driussi, Francesco; DE MICHIELIS, Marco; Selmi, Luca | |
| On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors | 1-gen-2011 | DE MICHIELIS, Marco; Conzatti, Francesco; Esseni, David; Selmi, Luca | |
| Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach | 1-gen-2009 | DE MICHIELIS, Marco; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
| Trade-off between Electron Velocity and Density of States in Ballistic nano-MOSFETs | 1-gen-2005 | DE MICHIELIS, Marco; Driussi, Francesco; Esseni, David | |
| Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics | 1-gen-2010 | Toniutti, Paolo; DE MICHIELIS, Marco; Palestri, Pierpaolo; Driussi, Francesco; Esseni, David; Selmi, Luca |