The eta parameter characterising the mu(eff)(E-eff) curves in strained Si nMOS transistors is extracted for the first time. It is found that eta is about 45 degrees higher than in unstrained devices. Therefore, using a standard eta value (0.5) instead of the real one implies underestimation of mobility at a high effective field and in turn, systematic error in surface roughness determination in strained Si devices.

Extraction of h parameter characterising ueff against Eeff curves in strained Si nMOS devices

DE MICHIELIS, Marco;ESSENI, David
2008

Abstract

The eta parameter characterising the mu(eff)(E-eff) curves in strained Si nMOS transistors is extracted for the first time. It is found that eta is about 45 degrees higher than in unstrained devices. Therefore, using a standard eta value (0.5) instead of the real one implies underestimation of mobility at a high effective field and in turn, systematic error in surface roughness determination in strained Si devices.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11390/857282
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