This paper presents an analytical model for the on-current (ION) of ballistic MOSFETs that points out how the reduction of the in-plane masses implies a trade-off between the increase of the electron velocity and the reduction of the 2D Density of States (D2D). Numerical simulations confirm the analytical results and demonstrate that the ION is deteriorated for materials with a very small D2D.
Trade-off between Electron Velocity and Density of States in Ballistic nano-MOSFETs
DE MICHIELIS, Marco;DRIUSSI, Francesco;ESSENI, David
2005-01-01
Abstract
This paper presents an analytical model for the on-current (ION) of ballistic MOSFETs that points out how the reduction of the in-plane masses implies a trade-off between the increase of the electron velocity and the reduction of the 2D Density of States (D2D). Numerical simulations confirm the analytical results and demonstrate that the ION is deteriorated for materials with a very small D2D.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
