SEGATTO, MATTIA

SEGATTO, MATTIA  

DPIA - DIPARTIMENTO POLITECNICO DI INGEGNERIA E ARCHITETTURA  

Mostra records
Risultati 1 - 14 di 14 (tempo di esecuzione: 0.037 secondi).
Titolo Data di pubblicazione Autore(i) File
Analytical Procedure for the Extraction of Material Parameters in Antiferroelectric ZrO2 1-gen-2023 Segatto, Mattia; Rupil, Filippo; Esseni, David
Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions 1-gen-2023 Massarotto, M.; Segatto, M.; Driussi, F.; Affanni, A.; Lancaster, S.; Slesazeck, S.; Mikolajick, T.; Esseni, D.
Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation 1-gen-2022 Fontanini, R.; Segatto, M.; Nair, K. S.; Holzer, M.; Driussi, F.; Hausler, I.; Koch, C. T.; Dubourdieu, C.; Deshpande, V.; Esseni, D.
Dynamics of polarization loss and imprint in bilayer ferroelectric tunnel junctions 1-gen-2023 Barbot, J.; Fontanini, R.; Segatto, M.; Coignus, J.; Triozon, F.; Carabasse, C.; Bedjaoui, M.; Andrieu, F.; Esseni, D.; Grenouillet, L.
Interplay between charge trapping and polarization switching in BEOL-compatible bilayer Ferroelectric Tunnel Junctions 1-gen-2022 Fontanini, R.; Barbot, J.; Segatto, M.; Lancaster, S.; Duong, Q.; Driussi, F.; Grenouillet, L.; Triozon, L.; Coignus, J.; Mikolajick, T.; Slesazeck, S.; Esseni, D.
Intrinsic Nature of Negative Capacitance in Multidomain Hf0.5Zr0.5O2-Based Ferroelectric/Dielectric Heterostructures 1-gen-2021 Hoffmann, M.; Gui, M.; Slesazeck, S.; Fontanini, R.; Segatto, M.; Esseni, D.; Mikolajick, T.
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures 1-gen-2022 Segatto, M.; Fontanini, R.; Driussi, F.; Lizzit, D.; Esseni, D.
Modeling 1/f and Lorenzian noise in III-V MOSFETs 1-gen-2019 Caruso, E.; Bettetti, F.; DEL LINZ, Leonida; Pin, D.; Segatto, M.; Palestri, P.
Modeling and Simulation of Ferroelectric-based Devices for Neuromorphic Computing Applications 24-mar-2024 Segatto, Mattia
Modelling and design of FTJs as multi-level low energy memristors for neuromorphic computing 1-gen-2021 Fontanini, Riccardo; Segatto, Mattia; Massarotto, Marco; Specogna, Ruben; Driussi, Francesco; Loghi, Mirko; Esseni, David
Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices : (Invited Paper) 1-gen-2023 Esseni, D.; Driussi, F.; Lizzit, D.; Massarotto, M.; Segatto, M.
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions 1-gen-2022 Segatto, M.; Massarotto, M.; Lancaster, S.; Duong, Q. T.; Affanni, A.; Fontanini, R.; Driussi, F.; Lizzit, D.; Mikolajick, T.; Slesazeck, S.; Esseni, D.
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions 1-gen-2021 Fontanini, R.; Barbot, J.; Segatto, M.; Lancaster, S.; Duong, Q.; Driussi, F.; Grenouillet, L.; Triozon, F.; Coignus, J.; Mikolajick, T.; Slesazeck, S.; Esseni, D.
Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes 1-gen-2023 Lancaster, Suzanne; Segatto, Mattia; Silva, Cláudia; Max, Benjamin; Mikolajick, Thomas; Esseni, David; Driussi, Francesco; Slesazeck, Stefan