SEGATTO, MATTIA
SEGATTO, MATTIA
DPIA - DIPARTIMENTO POLITECNICO DI INGEGNERIA E ARCHITETTURA
Analytical Procedure for the Extraction of Material Parameters in Antiferroelectric ZrO2
2023-01-01 Segatto, Mattia; Rupil, Filippo; Esseni, David
Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions
2023-01-01 Massarotto, M.; Segatto, M.; Driussi, F.; Affanni, A.; Lancaster, S.; Slesazeck, S.; Mikolajick, T.; Esseni, D.
Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation
2022-01-01 Fontanini, R.; Segatto, M.; Nair, K. S.; Holzer, M.; Driussi, F.; Hausler, I.; Koch, C. T.; Dubourdieu, C.; Deshpande, V.; Esseni, D.
Interplay between charge trapping and polarization switching in BEOL-compatible bilayer Ferroelectric Tunnel Junctions
2022-01-01 Fontanini, R.; Barbot, J.; Segatto, M.; Lancaster, S.; Duong, Q.; Driussi, F.; Grenouillet, L.; Triozon, L.; Coignus, J.; Mikolajick, T.; Slesazeck, S.; Esseni, D.
Intrinsic Nature of Negative Capacitance in Multidomain Hf0.5Zr0.5O2-Based Ferroelectric/Dielectric Heterostructures
2021-01-01 Hoffmann, M.; Gui, M.; Slesazeck, S.; Fontanini, R.; Segatto, M.; Esseni, D.; Mikolajick, T.
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures
2022-01-01 Segatto, M.; Fontanini, R.; Driussi, F.; Lizzit, D.; Esseni, D.
Modeling 1/f and Lorenzian noise in III-V MOSFETs
2019-01-01 Caruso, E.; Bettetti, F.; DEL LINZ, Leonida; Pin, D.; Segatto, M.; Palestri, P.
Modelling and design of FTJs as multi-level low energy memristors for neuromorphic computing
2021-01-01 Fontanini, Riccardo; Segatto, Mattia; Massarotto, Marco; Specogna, Ruben; Driussi, Francesco; Loghi, Mirko; Esseni, David
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions
2022-01-01 Segatto, M.; Massarotto, M.; Lancaster, S.; Duong, Q. T.; Affanni, A.; Fontanini, R.; Driussi, F.; Lizzit, D.; Mikolajick, T.; Slesazeck, S.; Esseni, D.
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions
2021-01-01 Fontanini, R.; Barbot, J.; Segatto, M.; Lancaster, S.; Duong, Q.; Driussi, F.; Grenouillet, L.; Triozon, F.; Coignus, J.; Mikolajick, T.; Slesazeck, S.; Esseni, D.
Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes
2023-01-01 Lancaster, Suzanne; Segatto, Mattia; Silva, Cláudia; Max, Benjamin; Mikolajick, Thomas; Esseni, David; Driussi, Francesco; Slesazeck, Stefan
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Analytical Procedure for the Extraction of Material Parameters in Antiferroelectric ZrO2 | 1-gen-2023 | Segatto, Mattia; Rupil, Filippo; Esseni, David | |
| Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions | 1-gen-2023 | Massarotto, M.; Segatto, M.; Driussi, F.; Affanni, A.; Lancaster, S.; Slesazeck, S.; Mikolajick, T.; Esseni, D. | |
| Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation | 1-gen-2022 | Fontanini, R.; Segatto, M.; Nair, K. S.; Holzer, M.; Driussi, F.; Hausler, I.; Koch, C. T.; Dubourdieu, C.; Deshpande, V.; Esseni, D. | |
| Interplay between charge trapping and polarization switching in BEOL-compatible bilayer Ferroelectric Tunnel Junctions | 1-gen-2022 | Fontanini, R.; Barbot, J.; Segatto, M.; Lancaster, S.; Duong, Q.; Driussi, F.; Grenouillet, L.; Triozon, L.; Coignus, J.; Mikolajick, T.; Slesazeck, S.; Esseni, D. | |
| Intrinsic Nature of Negative Capacitance in Multidomain Hf0.5Zr0.5O2-Based Ferroelectric/Dielectric Heterostructures | 1-gen-2021 | Hoffmann, M.; Gui, M.; Slesazeck, S.; Fontanini, R.; Segatto, M.; Esseni, D.; Mikolajick, T. | |
| Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures | 1-gen-2022 | Segatto, M.; Fontanini, R.; Driussi, F.; Lizzit, D.; Esseni, D. | |
| Modeling 1/f and Lorenzian noise in III-V MOSFETs | 1-gen-2019 | Caruso, E.; Bettetti, F.; DEL LINZ, Leonida; Pin, D.; Segatto, M.; Palestri, P. | |
| Modelling and design of FTJs as multi-level low energy memristors for neuromorphic computing | 1-gen-2021 | Fontanini, Riccardo; Segatto, Mattia; Massarotto, Marco; Specogna, Ruben; Driussi, Francesco; Loghi, Mirko; Esseni, David | |
| Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions | 1-gen-2022 | Segatto, M.; Massarotto, M.; Lancaster, S.; Duong, Q. T.; Affanni, A.; Fontanini, R.; Driussi, F.; Lizzit, D.; Mikolajick, T.; Slesazeck, S.; Esseni, D. | |
| Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions | 1-gen-2021 | Fontanini, R.; Barbot, J.; Segatto, M.; Lancaster, S.; Duong, Q.; Driussi, F.; Grenouillet, L.; Triozon, F.; Coignus, J.; Mikolajick, T.; Slesazeck, S.; Esseni, D. | |
| Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes | 1-gen-2023 | Lancaster, Suzanne; Segatto, Mattia; Silva, Cláudia; Max, Benjamin; Mikolajick, Thomas; Esseni, David; Driussi, Francesco; Slesazeck, Stefan |