This paper presents polarization loss and imprint in bilayer ferroelectric tunnel junctions as a function of relaxation time ( < 1 s) and after different SET/RESET pulses. Measurements were performed on Hf 0.5 Zr 0.5 O 2 /Al 2 O 3 stack at room temperature and systematically compared to reference samples without Al 2 O 3 . The experimental results were interpreted using self-consistent simulations coupling the polarization dynamic with charge trapping at the FE/DE interface. From this, mechanisms playing on short-term retention and imprint were explained dynamically. Amount of trapped charge modulated by amplitude and duration of SET/RESET pulses was presented as a root cause.
Dynamics of polarization loss and imprint in bilayer ferroelectric tunnel junctions
Fontanini R.;Segatto M.;Esseni D.;
2023-01-01
Abstract
This paper presents polarization loss and imprint in bilayer ferroelectric tunnel junctions as a function of relaxation time ( < 1 s) and after different SET/RESET pulses. Measurements were performed on Hf 0.5 Zr 0.5 O 2 /Al 2 O 3 stack at room temperature and systematically compared to reference samples without Al 2 O 3 . The experimental results were interpreted using self-consistent simulations coupling the polarization dynamic with charge trapping at the FE/DE interface. From this, mechanisms playing on short-term retention and imprint were explained dynamically. Amount of trapped charge modulated by amplitude and duration of SET/RESET pulses was presented as a root cause.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
