We here report a joint experimental and theoretical analysis of polarization switching in ferroelectric tunnel junctions. Our results show that the injection and trapping of charge into the ferroelectric-dielectric stack has a large influence on the polarization switching. Our results are relevant to the physical understanding and to the design of the devices, and for both memory and memristor applications.

Interplay between charge trapping and polarization switching in BEOL-compatible bilayer Ferroelectric Tunnel Junctions

Fontanini R.
;
Segatto M.;Driussi F.;Esseni D.
2022-01-01

Abstract

We here report a joint experimental and theoretical analysis of polarization switching in ferroelectric tunnel junctions. Our results show that the injection and trapping of charge into the ferroelectric-dielectric stack has a large influence on the polarization switching. Our results are relevant to the physical understanding and to the design of the devices, and for both memory and memristor applications.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/1229766
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