The single particle model has been developed for the tunneling between two monolayer two-dimensional (2D) semiconductors [1]. Based on this model, a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) (see Fig.1a) is proposed to achieve very steep subthreshold swing [1]. However, the initial study ignored the lateral transport in the top and bottom 2D layers. In this work, we study the effect of the lateral transport on the on-current area density and the sub-threshold swing (SS) of the Thin-TFET.

Lateral transport in two-dimensional heterojunction interlayer tunneling field effect transistor (Thin-TFET)

ESSENI, David;
2014-01-01

Abstract

The single particle model has been developed for the tunneling between two monolayer two-dimensional (2D) semiconductors [1]. Based on this model, a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) (see Fig.1a) is proposed to achieve very steep subthreshold swing [1]. However, the initial study ignored the lateral transport in the top and bottom 2D layers. In this work, we study the effect of the lateral transport on the on-current area density and the sub-threshold swing (SS) of the Thin-TFET.
2014
9781479954056
File in questo prodotto:
File Dimensione Formato  
2014_Mingda_Lateral_Transport.pdf

non disponibili

Tipologia: Documento in Post-print
Licenza: Non pubblico
Dimensione 243.85 kB
Formato Adobe PDF
243.85 kB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/1038176
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 4
  • ???jsp.display-item.citation.isi??? 3
social impact