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1.1 Articolo in rivista: [46066] Home page tipologia

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Prodotti della tipologia (ordinati per Data di deposito in Decrescente ordine): 6.881 a 6.900 di 46.066
Titolo Data di pubblicazione Autore(i) File
Resistance to Sharka in Apricot: Comparison of Phase-Reconstructed Resistant and Susceptible Haplotypes of 'Lito' Chromosome 1 and Analysis of Candidate Genes 1-gen-2019 De Mori, Gloria; Falchi, Rachele; Testolin, Raffaele; Bassi, Daniele; Savazzini, Federica; Dondini, Luca; Tartarini, Stefano; Palmisano, Francesco; Minafra, Angelantonio; Spadotto, Alessandro; Scalabrin, Simone; Geuna, Filippo
Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer 1-gen-2021 Ernandes, Cyrine; Khalil, Lama; Henck, Hugo; Zhao, Meng-Qiang; Chaste, Julien; Oehler, Fabrice; Johnson, Alan T Charlie; Asensio, Maria C; Pierucci, Debora; Pala, Marco; Avila, José; Ouerghi, Abdelkarim
Quenching Statistics of Silicon Single Photon Avalanche Diodes 1-gen-2021 Cazimajou, T; Pala, M; Saint-Martin, J; Helleboid, R; Grebot, J; Rideau, D; Dollfus, P
Phonon-assisted transport in van der Waals heterostructure tunnel devices 1-gen-2022 M'Foukh, A.; Saint-Martin, J.; Dollfus, P.; Pala, M.
Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy 1-gen-2022 Pierucci, Debora; Mahmoudi, Aymen; Silly, Mathieu; Bisti, Federico; Oehler, Fabrice; Patriarche, Gilles; Bonell, Frédéric; Marty, Alain; Vergnaud, Céline; Jamet, Matthieu; Boukari, Hervé; Lhuillier, Emmanuel; Pala, Marco; Ouerghi, Abdelkarim
Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices 1-gen-2022 Helleboid, R; Rideau, D; Grebot, J; Nicholson, I; Moussy, N; Saxod, O; Basset, M; Zimmer, A; Mamdy, B; Golanski, D; Agnew, M; Pellegrini, S; Sicre, M; Buj, C; Marchand, G; Saint-Martin, J; Pala, M; Dollfus, P
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines 1-gen-2022 Helleboid, R; Rideau, D; Grebot, J; Nicholson, I; Moussy, N; Saxod, O; Saint-Martin, J; Pala, M
Direct observation of highly anisotropic electronic and optical nature in indium telluride 1-gen-2023 Kremer, G; Mahmoudi, A; Bouaziz, M; Brochard-Richard, C; Khalil, L; Pierucci, D; Bertran, F; Le Fèvre, P; Silly, Mg; Chaste, J; Oehler, F; Pala, M; Bisti, F; Ouerghi, A
A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes 1-gen-2022 Helleboid, R; Rideau, D; Nicholson, I; Grebot, J; Mamdy, B; Mugny, G; Basset, M; Agnew, M; Golanski, D; Pellegrini, S; Saint-Martin, J; Pala, M; Dollfus, P
α-As2Te3 as a platform for the exploration of the electronic band structure of single layer β-tellurene 1-gen-2022 Khalil, L; Forcella, Pm; Kremer, G; Bisti, F; Chaste, J; Girard, Jc; Oehler, F; Pala, M; Dayen, Jf; Logoteta, D; Goerbig, M; Bertran, F; Le Fèvre, P; Lhuillier, E; Rault, J; Pierucci, D; Profeta, G; Ouerghi, A
Hybridization and localized flat band in the WSe2/MoSe2heterobilayer 1-gen-2022 Khalil, Lama; Pierucci, Debora; Velez-Fort, Emilio; Avila, José; Vergnaud, Céline; Dudin, Pavel; Oehler, Fabrice; Chaste, Julien; Jamet, Matthieu; Lhuillier, Emmanuel; Pala, Marco; Ouerghi, Abdelkarim
Full quantum simulation of Shockley-Read-Hall recombination in p-i-n and tunnel diodes 1-gen-2022 Pilotto, A; Dollfus, P; Saint-Martin, J; Pala, M
Electronic properties of rhombohedrally stacked bilayer WSe2 obtained by chemical vapor deposition 1-gen-2023 Mahmoudi, A; Bouaziz, M; Chiout, A; Di Berardino, G; Ullberg, N; Kremer, G; Dudin, P; Avila, J; Silly, M; Derycke, V; Romanin, D; Pala, M; Gerber, Ic; Chaste, J; Oehler, F; Ouerghi, A
Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3 1-gen-2023 Kremer, Geoffroy; Mahmoudi, Aymen; M'Foukh, Adel; Bouaziz, Meryem; Rahimi, Mehrdad; Della Rocca, Maria Luisa; Le Fèvre, Patrick; Dayen, Jean-Francois; Bertran, François; Matzen, Sylvia; Pala, Marco; Chaste, Julien; Oehler, Fabrice; Ouerghi, Abdelkarim
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials 1-gen-2023 M'Foukh, A; Saint-Martin, J; Dollfus, P; Pala, M
Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP(111) Heterostructure 1-gen-2023 Mahmoudi, Aymen; Bouaziz, Meryem; Chapuis, Niels; Kremer, Geoffroy; Chaste, Julien; Romanin, Davide; Pala, Marco; Bertran, François; Fèvre, Patrick Le; Gerber, Iann C; Patriarche, Gilles; Oehler, Fabrice; Wallart, Xavier; Ouerghi, Abdelkarim
Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs 1-gen-2009 Poli, S; Pala, M; Poiroux, T
Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys 1-gen-2021 Ernandes, C; Khalil, L; Almabrouk, H; Pierucci, D; Zheng, B; Avila, J; Dudin, P; Chaste, J; Oehler, F; Pala, M; Bisti, F; Brulé, T; Lhuillier, E; Pan, A; Ouerghi, A
Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs 1-gen-2017 Grillet, C; Logoteta, D; Cresti, A; Pala, M
Universal Rashba spin precession of two-dimensional electrons and holes 1-gen-2004 Pala, M; Governale, M; Konig, J; Zulicke, U
Prodotti della tipologia (ordinati per Data di deposito in Decrescente ordine): 6.881 a 6.900 di 46.066
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Tipologia
  • 1 Contributo su Rivista46065
  • 2 Contributo in Volume1
  • 3 Libro1
Autore
  • GIORDANI, Mario1634
  • COBAL, Marina1594
  • MONZANI, Simone1131
  • GIUGLIARELLI, Gilberto756
  • CAUZ, Diego741
  • DE LOTTO, Barbara738
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