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A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations
2000-01-01 DALLA SERRA, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs
2009-01-01 Palestri, Pierpaolo; C., Alexander; A., Asenov; V., Aubry Fortuna; G., Baccarani; A., Bournel; M., Braccioli; B., Cheng; P., Dollfus; A., Esposito; Esseni, David; C., Fenouillet Beranger; C., Fiegna; G., Fiori; A., Ghetti; G., Iannaccone; A., Martinez; B., Majkusiak; S., Monfray; V., Peikert; S., Reggiani; C., Riddet; J., Saint Martin; E., Sangiorgi; A., Schenk; Selmi, Luca; L., Silvestri; Toniutti, Paolo; J., Walczak
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories
2010-01-01 Vianello, Elisa; Nowak, E; Perniola, L; Driussi, Francesco; Blaise, P; Molas, G; DE SALVO, B; Selmi, Luca
A design methodology for MOS Current-Mode Logic Frequency Dividers
2007-01-01 Nonis, R; Palumbo, E; Palestri, Pierpaolo; Selmi, Luca
A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs
2003-01-01 Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Guegan, G.; Sangiorgi, E.
A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections
2009-01-01 DE MICHIELIS, Luca; Selmi, Luca; Ionescu, A. M.
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions
2020-01-01 Rosset, F.; Pilotto, A.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; De Angelis, D.; Driussi, F.; Menk, R. H.; Nichetti, C.; Steinhartova, T.; Palestri, P.
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs
2019-01-01 Mele, Leandro Julian; Palestri, Pierpaolo; Selmi, Luca
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers
2005-01-01 Nonis, Roberto; Palumbo, Enzo; Palestri, Pierpaolo; Selmi, Luca
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers
2006-01-01 Nonis, Roberto; Palumbo, Enzo; Palestri, Pierpaolo; Selmi, Luca
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations | 1-gen-2000 | DALLA SERRA, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca | |
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs | 1-gen-2009 | Palestri, Pierpaolo; C., Alexander; A., Asenov; V., Aubry Fortuna; G., Baccarani; A., Bournel; M., Braccioli; B., Cheng; P., Dollfus; A., Esposito; Esseni, David; C., Fenouillet Beranger; C., Fiegna; G., Fiori; A., Ghetti; G., Iannaccone; A., Martinez; B., Majkusiak; S., Monfray; V., Peikert; S., Reggiani; C., Riddet; J., Saint Martin; E., Sangiorgi; A., Schenk; Selmi, Luca; L., Silvestri; Toniutti, Paolo; J., Walczak | |
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories | 1-gen-2010 | Vianello, Elisa; Nowak, E; Perniola, L; Driussi, Francesco; Blaise, P; Molas, G; DE SALVO, B; Selmi, Luca | |
A design methodology for MOS Current-Mode Logic Frequency Dividers | 1-gen-2007 | Nonis, R; Palumbo, E; Palestri, Pierpaolo; Selmi, Luca | |
A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs | 1-gen-2003 | Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Guegan, G.; Sangiorgi, E. | |
A model for robust electrostatic design of nanowire FETs with arbitrary polygonal cross sections | 1-gen-2009 | DE MICHIELIS, Luca; Selmi, Luca; Ionescu, A. M. | |
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions | 1-gen-2020 | Rosset, F.; Pilotto, A.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; De Angelis, D.; Driussi, F.; Menk, R. H.; Nichetti, C.; Steinhartova, T.; Palestri, P. | |
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs | 1-gen-2019 | Mele, Leandro Julian; Palestri, Pierpaolo; Selmi, Luca | |
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers | 1-gen-2005 | Nonis, Roberto; Palumbo, Enzo; Palestri, Pierpaolo; Selmi, Luca | |
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers | 1-gen-2006 | Nonis, Roberto; Palumbo, Enzo; Palestri, Pierpaolo; Selmi, Luca |
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Opzioni
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Tipologia
- 4 Contributo in Atti di Convegno ... 206
- 4 Contributo in Atti di Convegno ... 199
- 1 Contributo su Rivista 166
- 1 Contributo su Rivista::1.1 Arti... 166
- 2 Contributo in Volume 7
- 2 Contributo in Volume::2.1 Contr... 7
- 4 Contributo in Atti di Convegno ... 7
- 5 Altro 6
- 7 Curatele 5
- 7 Curatele::7.1 Curatela 5
- 5 Altro::5.12 Altro 4
- 3 Libro 3
- 3 Libro::3.1 Monografia o trattat... 3
- 5 Altro::5.11 Software 2
- 6 Brevetti 2
- 6 Brevetti::6.1 Brevetto 2
Data di pubblicazione
- 2020 - 2023 9
- 2010 - 2019 156
- 2000 - 2009 159
- 1990 - 1999 63
- 1987 - 1989 8
Editore
- IEEE 38
- IEEE / Institute of Electrical an... 7
- Institute of Electrical and Elect... 3
- Wiley 3
- Elsevier BV:PO Box 211, 1000 AE A... 2
- Society for Industrial and Applie... 2
- American Institute of Physics Inc. 1
- Cambridge University Press 1
- DIEGM - Università degli Studi di... 1
- Elsevier Science BV 1
Rivista
- IEEE TRANSACTIONS ON ELECTRON DEV... 66
- SOLID-STATE ELECTRONICS 31
- IEEE ELECTRON DEVICE LETTERS 11
- MICROELECTRONIC ENGINEERING 9
- ECS TRANSACTIONS 3
- IEEE JOURNAL OF SOLID-STATE CIRCUITS 3
- IEEE TRANSACTIONS ON CIRCUITS AND... 3
- JOURNAL OF APPLIED PHYSICS 3
- IEEE TRANSACTIONS ON DEVICE AND M... 2
- IEEE TRANSACTIONS ON NANOTECHNOLOGY 2
Keyword
- TCAD 7
- Monte Carlo 6
- Electrical and Electronic Enginee... 5
- Electronic 5
- Optical and Magnetic Materials 5
- Simulation 5
- Tunnel-FET 5
- Condensed Matter Physics 4
- Modeling 4
- Charge trapping 3
Lingua
- eng 286
- ita 3
Accesso al fulltext
- reserved 237
- no fulltext 125
- restricted 15
- partially open 12
- open 6