The effects of electrical stress and ionizing radiation on the characteristics of Si-based TFETs were investigated experimentally. We found that the electrical stress effects in TFETs could not be ignored in radiation tests, since they can possibly overwhelm the radiation-induced degradation. Under this circumstance, a lower gate voltage under which the electrical stress effects were suppressed induced a stronger radiation induced degradation in threshold voltage shift and interface traps accumulation.
Effects of electrical stress and ionizing radiation on Si-based TFETs
DRIUSSI, Francesco;SELMI, Luca;
2015-01-01
Abstract
The effects of electrical stress and ionizing radiation on the characteristics of Si-based TFETs were investigated experimentally. We found that the electrical stress effects in TFETs could not be ignored in radiation tests, since they can possibly overwhelm the radiation-induced degradation. Under this circumstance, a lower gate voltage under which the electrical stress effects were suppressed induced a stronger radiation induced degradation in threshold voltage shift and interface traps accumulation.File in questo prodotto:
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