In this work, we investigate the transport properties of 2D crystal semiconductors from two angles. For drift transport in traditional FETs, scattering mechanisms that limit the electron mobility are identified, and means to improve them vastly over currently reported values are presented. For low-power electronics, tunneling transport currents within monolayer p-n junctions, and interlayer tunneling currents between adjacent 2D semiconductor layers is discussed for TFETs.

Electron transport in 2D crystal semiconductors and their device applications

ESSENI, David;
2015

Abstract

In this work, we investigate the transport properties of 2D crystal semiconductors from two angles. For drift transport in traditional FETs, scattering mechanisms that limit the electron mobility are identified, and means to improve them vastly over currently reported values are presented. For low-power electronics, tunneling transport currents within monolayer p-n junctions, and interlayer tunneling currents between adjacent 2D semiconductor layers is discussed for TFETs.
9781479956777
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11390/1084238
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