This paper studies the impact of the access region on the on-state current of Dirac-Source FETs. To this purpose, we develop a transfer-matrix model for graphene p–n junctions and FETs, and validate it with experiments. Our analysis provides insights about the operation and design of these novel computing devices.
Access region resistance in graphene Dirac-Source FETs: a Transfer-Matrix based study
Baccichetti, EricaPrimo
;Esseni, David
Ultimo
2024-01-01
Abstract
This paper studies the impact of the access region on the on-state current of Dirac-Source FETs. To this purpose, we develop a transfer-matrix model for graphene p–n junctions and FETs, and validate it with experiments. Our analysis provides insights about the operation and design of these novel computing devices.File in questo prodotto:
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