We present a characterization of self-heating in a 0.25mum SiGe BiCMOS technology on bulk and SOI substrates. Measurements are compared with analytical models and simulations. Thermal coupling between emitter fingers and effect of metallization are also analyzed.
Thermal Resistance in Si(1-x) Ge(x) HBTs on Bulk and SOI Substrates
PALESTRI, Pierpaolo;
2001-01-01
Abstract
We present a characterization of self-heating in a 0.25mum SiGe BiCMOS technology on bulk and SOI substrates. Measurements are compared with analytical models and simulations. Thermal coupling between emitter fingers and effect of metallization are also analyzed.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
2001_10_BCTM_Palestri_ThermalResistance.pdf
non disponibili
Tipologia:
Documento in Post-print
Licenza:
Non pubblico
Dimensione
503.86 kB
Formato
Adobe PDF
|
503.86 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
