We present three-dimensional heat-transport simulation for bipolar transistors. The simulations are validated on experimental data, and are employed to develop analytical models for the thermal resistance of devices fabricated on bulk and SOI substrate, and with deep-trench isolation. The cross-heating effect in multifinger devices is also modeled.
Physics-Based and Compact Models for Self-Heating in High-Speed Bipolar Integrated Circuits
PALESTRI, Pierpaolo;
2002-01-01
Abstract
We present three-dimensional heat-transport simulation for bipolar transistors. The simulations are validated on experimental data, and are employed to develop analytical models for the thermal resistance of devices fabricated on bulk and SOI substrate, and with deep-trench isolation. The cross-heating effect in multifinger devices is also modeled.File in questo prodotto:
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