This paper presents both analytical models and numerical simulations concerning strain engineering in n-FinFETs. Our analysis identifies the mechanisms for the stress induced mobility enhancement and provides insight for the stress optimization.
Basic Insight about the Strain Engineering of n-type FinFETS
SERRA, Nicola;ESSENI, David
2009-01-01
Abstract
This paper presents both analytical models and numerical simulations concerning strain engineering in n-FinFETs. Our analysis identifies the mechanisms for the stress induced mobility enhancement and provides insight for the stress optimization.File in questo prodotto:
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