This paper aims at comparing Pseudospectral method and Discrete Geometric approach for modelling quantization effects in nanoscale devices. To this purpose, we implemented a simulation tool, based on both the methods, to solving self-consistent Schr ¨ odinger-Poisson coupled problem for a 2D electron carrier confinement according to Effective Mass Approximation model (suitable for FinFETs and nanowire FETs).
Comparison between Pseudospectral and Discrete Geometric Methods for Modelling Quantization Effects in Nanoscale Electron Devices
TREVISAN, Francesco;SPECOGNA, Ruben;BREDA, Dimitri;ESSENI, David;PAUSSA, Alan;VERMIGLIO, Rossana
2011-01-01
Abstract
This paper aims at comparing Pseudospectral method and Discrete Geometric approach for modelling quantization effects in nanoscale devices. To this purpose, we implemented a simulation tool, based on both the methods, to solving self-consistent Schr ¨ odinger-Poisson coupled problem for a 2D electron carrier confinement according to Effective Mass Approximation model (suitable for FinFETs and nanowire FETs).File in questo prodotto:
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