This paper presents a systematic comparison between the numerical efficiency of the pseudo-spectral (PS) and finite difference (FD) methods for the solution of eigenvalue problems related to both n and p-MOS transistors, with different geometries and carrier dimensionalities. Our results indicate remarkable advantages of the PS compared to the FD method in terms of CPU time.
Pseudo-spectral method for the modelling of quantization effects in nanoscale MOS transistors
PAUSSA, Alan;BREDA, Dimitri;VERMIGLIO, Rossana;ESSENI, David
2010-01-01
Abstract
This paper presents a systematic comparison between the numerical efficiency of the pseudo-spectral (PS) and finite difference (FD) methods for the solution of eigenvalue problems related to both n and p-MOS transistors, with different geometries and carrier dimensionalities. Our results indicate remarkable advantages of the PS compared to the FD method in terms of CPU time.File in questo prodotto:
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