This paper investigates with a mixed device/circuit simulation methodology the effectiveness of DG SOI MOSFETs compared to conventional bulkMOSFETs for the implementation of low standby power circuit techniques. Our results indicate that DG MOSFETs offer significant advantages essentially because of the larger VT sensitivity to back-biasing.
Trading off static power and dynamic performance in CMOS digital circuits: bulk versus double gate SOI MOSFETs
ESSENI, David;SELMI, Luca
2007-01-01
Abstract
This paper investigates with a mixed device/circuit simulation methodology the effectiveness of DG SOI MOSFETs compared to conventional bulkMOSFETs for the implementation of low standby power circuit techniques. Our results indicate that DG MOSFETs offer significant advantages essentially because of the larger VT sensitivity to back-biasing.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
2007_09_ESSDERC_Agostinelli_TradingOffStaticPower.pdf
non disponibili
Tipologia:
Documento in Post-print
Licenza:
Non pubblico
Dimensione
144.53 kB
Formato
Adobe PDF
|
144.53 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
