We propose a new and simple way to account for tunneling in Schottky barrier (SB) contacts by using the effective potential approach. The method has been validated in 1D cases by comparison with the WK B method and then implemented in a Multi-Subband Monte Carlo simulator. Results for metallic Source/Drain (S/D) MOSFETs with Schottky barrier show that very low Schottky barrier heights (SBH) are needed to provide a current drive comparable to the one of doped-S/D devices. We also observe that SB-MOSFETs are working closer to the ballistic limit than their doped-S/D counterparts although the transport bottleneck is the SB contact.
Multi-subband Monte Carlo simulation of fully-depleted silicon-on-insulator Schottky barrier MOSFETs
PALESTRI, Pierpaolo;SELMI, Luca;
2010-01-01
Abstract
We propose a new and simple way to account for tunneling in Schottky barrier (SB) contacts by using the effective potential approach. The method has been validated in 1D cases by comparison with the WK B method and then implemented in a Multi-Subband Monte Carlo simulator. Results for metallic Source/Drain (S/D) MOSFETs with Schottky barrier show that very low Schottky barrier heights (SBH) are needed to provide a current drive comparable to the one of doped-S/D devices. We also observe that SB-MOSFETs are working closer to the ballistic limit than their doped-S/D counterparts although the transport bottleneck is the SB contact.File in questo prodotto:
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