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Mostrati risultati da 21 a 40 di 119
Titolo Data di pubblicazione Autore(i) File
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 1-gen-2006 Arreghini, Antonio; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.; VAN SCHAIJK, R.
Experimental and Simulation Study of the Biaxial Strain and Temperature dependence of the Electron Mobility Enhancement in Si MOSFETs 1-gen-2007 Driussi, Francesco; Esseni, David; Selmi, Luca; P. E., Hellstrom; G., Malm; J., Hallstedt; M., Ostling; T. J., Grasby; D. R., Leadley; X., Mescot
Characterization and Modeling of long term retention in SONOS Non Volatile Memories 1-gen-2007 Arreghini, A; Akil, N; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 1-gen-2007 Vianello, Elisa; Driussi, Francesco; Esseni, David; Selmi, Luca; Widdershoven, F; VAN DUUREN, M. J.
Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs 1-gen-2007 DE MICHIELIS, Marco; Esseni, David; Driussi, Francesco
Fabrication, Characterization and Modeling of Strained SOI MOSFETs with Very Large Effective Mobility 1-gen-2007 Driussi, Francesco; Esseni, David; Selmi, Luca; M., Schmidt; M. C., Lemme; H., Kurz; D., Buca; S., Mantl; M., Luysberg; R., Loo; D., Nguyen; M., Reiche
Comparison of modeling approaches for the capacitance-voltage and current voltage characteristics of advanced gate stacks 1-gen-2007 Palestri, Pierpaolo; N., Barin; D., Brunel; C., Busseret; A., Campera; P. A., Childs; Driussi, Francesco; C., Fiegna; G., Fiori; R., Gusmeroli; G., Iannaccone; M., Karner; H., Kosina; A. L., Lacaita; E., Langer; B., Majkusiak; C., Monzio Compagnoni; A., Poncet; E., Sangiorgi; Selmi, Luca; A. S., Spinelli; J., Walczak
Impact of the Charge Transport in the Conduction Band on the Retention of Si-Nitride Based Memories 1-gen-2008 E., Vianello; Driussi, Francesco; Palestri, Pierpaolo; A., Arreghini; Esseni, David; Selmi, Luca; N., Akil; M., van Duuren; D. S., Golubović
Long term charge retention dynamics of SONOS cells 1-gen-2008 Arreghini, A; Akil, N; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.
Impact of Device Layout and Annealing Process During the Passivation of Interface States in Presence of Silicon Nitride Layers 1-gen-2008 Driussi, Francesco; Selmi, Luca; N., Akil; M. J., van Duuren; R., van Schaijk
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 1-gen-2008 Arreghini, A; Driussi, F; Vianello, E; Esseni, D; VAN DUUREN, M. J.; Gobulovic, D. S.; Akil, N; VAN SCHAIJK, R
Programme and retention characteristics of SONOS memory arrays with layered tunnel barrier 1-gen-2008 D. S., Golubović; E., Vianello; A., Arreghini; Driussi, Francesco; M. J., van Duuren; N., Akil; Selmi, Luca; Esseni, David
On the electron mobility enhancement in biaxially strained Si MOSFETs 1-gen-2008 Driussi, Francesco; Esseni, David; Selmi, Luca; P. E., Hellström; G., Malm; J., Hållstedt; M., Östling; T. J., Grasby; D. R., Leadley; X., Mescot
Program efficiency and high temperature retention of SiN/high-K based memories 1-gen-2009 Vianello, Elena; M., Bocquet; Driussi, Francesco; L., Perniola; G., Molas; Selmi, Luca
Simulation Study of Coulomb Mobility in Strained Silicon 1-gen-2009 Driussi, Francesco; Esseni, David
Mobility Extraction of UTB n-MOSFETs down to 0.9 nm SOI thickness 1-gen-2009 Schmidt, M; Lemme, M. C.; Gottlob, H. D. B.; Kurz, H; Driussi, Francesco; Selmi, Luca
Revised analysis of Coulomb scattering limited mobility in biaxially strained silicon MOSFETs 1-gen-2009 Driussi, Francesco; Esseni, David
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 1-gen-2009 Vianello, Elisa; Driussi, Francesco; Arreghini, Antonio; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; N., Akil; M. J., van Duuren; D. S., Golubovic
Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications 1-gen-2009 Golubovic, Ds; van Duuren, Mj; Akil, N; Arreghini, Antonio; Driussi, Francesco
Mobility extraction in SOI MOSFETs with sub 1 nm body thickness 1-gen-2009 Schmidt, M; Lemme, Mc; Gottlob, Hdb; Driussi, Francesco; Selmi, Luca; Kurz, H.
Mostrati risultati da 21 a 40 di 119
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