OSGNACH, Patrik
 Distribuzione geografica
Continente #
NA - Nord America 129
EU - Europa 87
AS - Asia 32
AF - Africa 4
OC - Oceania 2
SA - Sud America 2
Continente sconosciuto - Info sul continente non disponibili 1
Totale 257
Nazione #
US - Stati Uniti d'America 128
IT - Italia 41
DE - Germania 13
CN - Cina 10
JP - Giappone 10
RU - Federazione Russa 9
CZ - Repubblica Ceca 5
AT - Austria 4
IN - India 4
PL - Polonia 4
VN - Vietnam 4
DZ - Algeria 3
FR - Francia 3
AU - Australia 2
GB - Regno Unito 2
TW - Taiwan 2
UA - Ucraina 2
UZ - Uzbekistan 2
A1 - Anonimo 1
CA - Canada 1
CH - Svizzera 1
CL - Cile 1
FI - Finlandia 1
IE - Irlanda 1
NL - Olanda 1
TN - Tunisia 1
VE - Venezuela 1
Totale 257
Città #
Woodbridge 13
Fairfield 11
Udine 9
Houston 8
Wilmington 8
Ashburn 7
Buffalo 7
Seattle 7
Suita 7
Ann Arbor 6
Santa Cruz 6
Columbus 5
Dong Ket 4
Beijing 3
Council Bluffs 3
Las Vegas 3
Torino 3
Auburn 2
Boardman 2
Cambridge 2
Des Moines 2
Fremont 2
Los Angeles 2
Parsippany 2
Polska 2
Taipei 2
Tokyo 2
Trieste 2
Vellore 2
Warsaw 2
Wuhan 2
Arlington 1
Berlin 1
Clearwater 1
Cork 1
Davis 1
Easton 1
Figtree 1
Florence 1
Frisco 1
Helsinki 1
Leawood 1
London 1
Monmouth Junction 1
Munich 1
Nanjing 1
New Delhi 1
Padova 1
Phoenix 1
Rome 1
San Diego 1
San Jose 1
San Mateo 1
Santa Clara 1
Shanghai 1
Sunnyvale 1
Sydney 1
Tashkent 1
Toronto 1
Vienna 1
Totale 167
Nome #
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells, file e27ce0c2-6742-055e-e053-6605fe0a7873 170
Development and Optimisation of Advanced Simulation Models for Nanoscale FETs with Alternative Channel Materials, file e27ce0c5-6e3c-055e-e053-6605fe0a7873 75
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs, file e27ce0c2-b4ee-055e-e053-6605fe0a7873 8
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices, file e27ce0c1-e7e2-055e-e053-6605fe0a7873 5
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs, file e27ce0c1-ef1e-055e-e053-6605fe0a7873 4
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain, file e27ce0c1-c819-055e-e053-6605fe0a7873 2
The impact of interface states on the mobility and the drive current of III-V MOSFETs, file e27ce0c1-ef17-055e-e053-6605fe0a7873 2
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs, file c8cdfe1a-3375-4797-97d3-2f19bb725ac8 1
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors, file e27ce0c2-2013-055e-e053-6605fe0a7873 1
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps, file e27ce0c2-3a97-055e-e053-6605fe0a7873 1
Totale 269
Categoria #
all - tutte 501
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 501


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201915 0 0 0 0 0 0 0 0 0 0 10 5
2019/202056 5 2 2 8 6 3 7 5 7 4 3 4
2020/202132 2 1 3 3 3 3 8 2 1 1 1 4
2021/202250 2 4 5 7 5 5 3 1 0 8 7 3
2022/202345 2 0 21 5 7 2 0 1 3 0 4 0
2023/202425 6 0 3 0 0 5 2 3 0 1 5 0
Totale 269