statistiche ricercatore

Continente	#
NA - Nord America	1.371
AS - Asia	400
EU - Europa	385
SA - Sud America	43
AF - Africa	8
AN - Antartide	1
Continente sconosciuto - Info sul continente non disponibili	1
OC - Oceania	1
Totale	2.210

Nazione	#
US - Stati Uniti d'America	1.358
SG - Singapore	203
CN - Cina	98
IT - Italia	97
UA - Ucraina	83
DE - Germania	63
HK - Hong Kong	38
BR - Brasile	37
RU - Federazione Russa	30
FI - Finlandia	27
IE - Irlanda	20
VN - Vietnam	18
FR - Francia	13
IN - India	13
CA - Canada	11
GB - Regno Unito	11
SE - Svezia	8
TR - Turchia	8
JP - Giappone	7
PL - Polonia	7
AT - Austria	5
GR - Grecia	4
NL - Olanda	4
BE - Belgio	3
CH - Svizzera	3
DZ - Algeria	3
ES - Italia	3
AR - Argentina	2
MX - Messico	2
OM - Oman	2
PK - Pakistan	2
TW - Taiwan	2
ZA - Sudafrica	2
A2 - ???statistics.table.value.countryCode.A2???	1
AE - Emirati Arabi Uniti	1
AQ - Antartide	1
BD - Bangladesh	1
BO - Bolivia	1
CI - Costa d'Avorio	1
CZ - Repubblica Ceca	1
EC - Ecuador	1
ET - Etiopia	1
GE - Georgia	1
HU - Ungheria	1
JO - Giordania	1
KG - Kirghizistan	1
LA - Repubblica Popolare Democratica del Laos	1
LK - Sri Lanka	1
LU - Lussemburgo	1
MA - Marocco	1
NR - Nauru	1
PE - Perù	1
SI - Slovenia	1
TH - Thailandia	1
UZ - Uzbekistan	1
VE - Venezuela	1
Totale	2.210

Nome	#
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors	202
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells	180
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain	176
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs	172
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices	162
The impact of interface states on the mobility and the drive current of III-V MOSFETs	157
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs	151
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps	149
An Improved Semi-Classical Model to Investigate Tunnel-FET performance	145
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications	142
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs	131
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials	128
Development and Optimisation of Advanced Simulation Models for Nanoscale FETs with Alternative Channel Materials	128
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs	114
An Improved Semi-classical Approach for Simulating Tunnel-FETs	95
Totale	2.232

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	122	0	0	0	0	0	27	14	18	21	6	24	12
2021/2022	115	5	10	3	5	1	8	3	9	0	22	33	16
2022/2023	164	15	24	4	30	7	38	0	11	21	1	3	10
2023/2024	65	11	5	1	1	4	24	0	12	3	2	1	1
2024/2025	301	3	16	11	17	15	14	20	31	30	23	41	80
2025/2026	276	38	55	25	35	114	9	0	0	0	0	0	0
Totale													2.232