statistiche ricercatore

Continente	#
NA - Nord America	1.379
AS - Asia	414
EU - Europa	388
SA - Sud America	45
AF - Africa	8
AN - Antartide	1
Continente sconosciuto - Info sul continente non disponibili	1
OC - Oceania	1
Totale	2.237

Nazione	#
US - Stati Uniti d'America	1.366
SG - Singapore	212
CN - Cina	100
IT - Italia	98
UA - Ucraina	83
DE - Germania	63
BR - Brasile	38
HK - Hong Kong	38
RU - Federazione Russa	30
FI - Finlandia	27
IE - Irlanda	20
VN - Vietnam	18
IN - India	14
FR - Francia	13
CA - Canada	11
GB - Regno Unito	11
SE - Svezia	9
TR - Turchia	8
JP - Giappone	7
PL - Polonia	7
AT - Austria	5
ES - Italia	4
GR - Grecia	4
NL - Olanda	4
AR - Argentina	3
BE - Belgio	3
CH - Svizzera	3
DZ - Algeria	3
BD - Bangladesh	2
MX - Messico	2
OM - Oman	2
PK - Pakistan	2
TW - Taiwan	2
ZA - Sudafrica	2
A2 - ???statistics.table.value.countryCode.A2???	1
AE - Emirati Arabi Uniti	1
AQ - Antartide	1
BO - Bolivia	1
CI - Costa d'Avorio	1
CZ - Repubblica Ceca	1
EC - Ecuador	1
ET - Etiopia	1
GE - Georgia	1
HU - Ungheria	1
JO - Giordania	1
KG - Kirghizistan	1
LA - Repubblica Popolare Democratica del Laos	1
LK - Sri Lanka	1
LU - Lussemburgo	1
MA - Marocco	1
NR - Nauru	1
PE - Perù	1
SA - Arabia Saudita	1
SI - Slovenia	1
TH - Thailandia	1
UZ - Uzbekistan	1
VE - Venezuela	1
Totale	2.237

Nome	#
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors	204
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells	182
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain	178
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs	174
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices	165
The impact of interface states on the mobility and the drive current of III-V MOSFETs	159
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs	152
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps	152
An Improved Semi-Classical Model to Investigate Tunnel-FET performance	145
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications	144
Development and Optimisation of Advanced Simulation Models for Nanoscale FETs with Alternative Channel Materials	134
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs	131
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials	128
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs	115
An Improved Semi-classical Approach for Simulating Tunnel-FETs	96
Totale	2.259

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	122	0	0	0	0	0	27	14	18	21	6	24	12
2021/2022	115	5	10	3	5	1	8	3	9	0	22	33	16
2022/2023	164	15	24	4	30	7	38	0	11	21	1	3	10
2023/2024	65	11	5	1	1	4	24	0	12	3	2	1	1
2024/2025	301	3	16	11	17	15	14	20	31	30	23	41	80
2025/2026	303	38	55	25	35	114	36	0	0	0	0	0	0
Totale													2.259