IRIS
OSGNACH, Patrik
 Distribuzione geografica
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Continente #
NA - Nord America 1.621
AS - Asia 480
EU - Europa 446
SA - Sud America 58
Continente sconosciuto - Info sul continente non disponibili 23
AF - Africa 12
AN - Antartide 1
OC - Oceania 1
Totale 2.642
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Nazione #
US - Stati Uniti d'America 1.600
SG - Singapore 228
IT - Italia 121
CN - Cina 110
UA - Ucraina 84
DE - Germania 67
BR - Brasile 44
HK - Hong Kong 43
FR - Francia 31
RU - Federazione Russa 30
FI - Finlandia 27
VN - Vietnam 27
IN - India 22
IE - Irlanda 20
GB - Regno Unito 16
CA - Canada 14
TR - Turchia 11
SE - Svezia 9
JP - Giappone 8
PL - Polonia 8
NL - Olanda 6
AR - Argentina 5
AT - Austria 5
ES - Italia 4
GR - Grecia 4
BD - Bangladesh 3
BE - Belgio 3
CH - Svizzera 3
DZ - Algeria 3
PK - Pakistan 3
SA - Arabia Saudita 3
UZ - Uzbekistan 3
ZA - Sudafrica 3
BO - Bolivia 2
CO - Colombia 2
CZ - Repubblica Ceca 2
EC - Ecuador 2
ID - Indonesia 2
JM - Giamaica 2
LT - Lituania 2
MA - Marocco 2
MX - Messico 2
OM - Oman 2
TW - Taiwan 2
VE - Venezuela 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AD - Andorra 1
AE - Emirati Arabi Uniti 1
AQ - Antartide 1
CI - Costa d'Avorio 1
ET - Etiopia 1
GE - Georgia 1
HU - Ungheria 1
IL - Israele 1
IQ - Iraq 1
JO - Giordania 1
KE - Kenya 1
KG - Kirghizistan 1
KN - Saint Kitts e Nevis 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LK - Sri Lanka 1
LU - Lussemburgo 1
NI - Nicaragua 1
NP - Nepal 1
NR - Nauru 1
PE - Perù 1
PH - Filippine 1
PS - Palestinian Territory 1
SI - Slovenia 1
TH - Thailandia 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
Totale 2.620
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Città #
Woodbridge 200
Houston 145
Ann Arbor 128
Fairfield 121
Ashburn 103
Singapore 85
Chandler 71
Wilmington 68
San Jose 67
Seattle 60
Jacksonville 55
Beijing 49
Udine 46
Hong Kong 43
Dearborn 41
Cambridge 33
Boardman 22
Los Angeles 22
Munich 17
Lauterbourg 15
Princeton 15
Council Bluffs 14
Dublin 14
Cervignano Del Friuli 13
Pune 10
San Diego 9
Ho Chi Minh City 8
New York 8
Des Moines 7
Izmir 7
Milan 7
Santa Clara 7
Trieste 7
Buffalo 6
Chicago 6
Cork 6
Dong Ket 6
Ottawa 6
Dallas 5
Hefei 5
Rome 5
São Paulo 5
Tokyo 5
Amsterdam 4
Cagliari 4
Hanoi 4
Orem 4
Phoenix 4
Redondo Beach 4
Shenyang 4
Vienna 4
Warsaw 4
Barcelona 3
Bologna 3
Brooklyn 3
Chennai 3
Düsseldorf 3
Grenoble 3
Kraków 3
Kunming 3
Modena 3
San Francisco 3
Angra dos Reis 2
Atlanta 2
Baotou 2
Berkeley 2
Boston 2
Brussels 2
Da Nang 2
Denver 2
Frankfurt am Main 2
Guangzhou 2
Guayaquil 2
Hangzhou 2
Helsinki 2
Istanbul 2
Itabira 2
Mexico City 2
Miano 2
Mumbai 2
Myrtle Beach 2
Nanjing 2
New Delhi 2
Ninh Bình 2
Nuremberg 2
Ogden 2
Osaka 2
Portsmouth 2
Redwood City 2
Rio de Janeiro 2
Salvador 2
Stockholm 2
Taiyuan 2
Toronto 2
Vancouver 2
Wuhan 2
Yucaipa 2
Allentown 1
Almirante Tamandaré 1
Alpharetta 1
Totale 1.711
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Nome #
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 222
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 208
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 198
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 197
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 188
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 183
The impact of interface states on the mobility and the drive current of III-V MOSFETs 182
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 179
Development and Optimisation of Advanced Simulation Models for Nanoscale FETs with Alternative Channel Materials 178
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 175
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 163
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 158
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials 148
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs 142
An Improved Semi-classical Approach for Simulating Tunnel-FETs 121
Totale 2.642
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Categoria #
all - tutte 9.048
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.048
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202297 0 0 0 5 1 8 3 9 0 22 33 16
2022/2023164 15 24 4 30 7 38 0 11 21 1 3 10
2023/202465 11 5 1 1 4 24 0 12 3 2 1 1
2024/2025301 3 16 11 17 15 14 20 31 30 23 41 80
2025/2026532 38 55 25 35 114 52 75 12 48 27 32 19
2026/2027154 15 49 50 40 0 0 0 0 0 0 0 0
Totale 2.642