OSGNACH, Patrik
 Distribuzione geografica
Continente #
NA - Nord America 1180
EU - Europa 312
AS - Asia 64
AF - Africa 1
Continente sconosciuto - Info sul continente non disponibili 1
SA - Sud America 1
Totale 1559
Nazione #
US - Stati Uniti d'America 1174
IT - Italia 91
UA - Ucraina 83
DE - Germania 48
CN - Cina 46
FI - Finlandia 24
IE - Irlanda 20
GB - Regno Unito 8
SE - Svezia 7
TR - Turchia 7
CA - Canada 6
FR - Francia 6
VN - Vietnam 6
PL - Polonia 5
AT - Austria 4
BE - Belgio 4
GR - Grecia 4
ES - Italia 3
JP - Giappone 3
CH - Svizzera 2
NL - Olanda 2
A2 - ???statistics.table.value.countryCode.A2??? 1
DZ - Algeria 1
HU - Ungheria 1
IN - India 1
PE - Perù 1
TW - Taiwan 1
Totale 1559
Città #
Woodbridge 200
Houston 145
Ann Arbor 128
Fairfield 120
Chandler 71
Wilmington 68
Jacksonville 55
Seattle 51
Udine 45
Ashburn 44
Dearborn 41
Cambridge 32
Beijing 16
Princeton 15
Dublin 14
Cervignano Del Friuli 13
San Diego 8
Boardman 7
Des Moines 7
Izmir 7
Munich 7
Trieste 7
Cork 6
Dong Ket 6
Ottawa 6
Hefei 4
Shenyang 4
Barcelona 3
Bologna 3
Brussels 3
Grenoble 3
Kraków 3
Kunming 3
Modena 3
Vienna 3
Baotou 2
Hangzhou 2
Nanjing 2
Osaka 2
Redwood City 2
Taiyuan 2
Warsaw 2
Wuhan 2
Amsterdam 1
Budapest 1
Changsha 1
Chongqing 1
Graz 1
Guangzhou 1
Helsinki 1
Heverlee 1
Hsinchu 1
Indiana 1
Jinan 1
Karlsruhe 1
Lima 1
Lund 1
Nanchang 1
Norwalk 1
Nürnberg 1
Phoenix 1
Preganziol 1
Quzhou 1
Sacile 1
San Francisco 1
Simi Valley 1
Verona 1
Wenzhou 1
Zhengzhou 1
Zurich 1
Totale 1194
Nome #
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 161
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 134
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 130
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 125
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 121
The impact of interface states on the mobility and the drive current of III-V MOSFETs 119
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 111
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 111
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 106
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 103
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 99
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials 88
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs 76
An Improved Semi-classical Approach for Simulating Tunnel-FETs 57
Development and Optimisation of Advanced Simulation Models for Nanoscale FETs with Alternative Channel Materials 40
Totale 1581
Categoria #
all - tutte 2653
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2653


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2017/20184 0000 00 00 0022
2018/2019140 3192 80 120 0194829
2019/2020404 26381449 3362 4649 25281123
2020/2021203 636225 1227 1418 2162412
2021/2022115 51035 18 39 0223316
2022/2023155 1524430 738 011 22130
Totale 1581