OSGNACH, Patrik
 Distribuzione geografica
Continente #
NA - Nord America 1.261
EU - Europa 320
AS - Asia 111
AF - Africa 1
Continente sconosciuto - Info sul continente non disponibili 1
SA - Sud America 1
Totale 1.695
Nazione #
US - Stati Uniti d'America 1.255
IT - Italia 95
UA - Ucraina 83
CN - Cina 56
DE - Germania 50
FI - Finlandia 26
SG - Singapore 26
IE - Irlanda 20
IN - India 11
GB - Regno Unito 8
SE - Svezia 7
TR - Turchia 7
CA - Canada 6
FR - Francia 6
VN - Vietnam 6
PL - Polonia 5
AT - Austria 4
GR - Grecia 4
BE - Belgio 3
ES - Italia 3
JP - Giappone 3
CH - Svizzera 2
NL - Olanda 2
TW - Taiwan 2
A2 - ???statistics.table.value.countryCode.A2??? 1
CZ - Repubblica Ceca 1
DZ - Algeria 1
HU - Ungheria 1
PE - Perù 1
Totale 1.695
Città #
Woodbridge 200
Houston 145
Ann Arbor 128
Fairfield 120
Chandler 71
Wilmington 68
Ashburn 60
Seattle 59
Jacksonville 55
Udine 45
Dearborn 41
Cambridge 32
Singapore 23
Boardman 22
Beijing 16
Princeton 15
Dublin 14
Cervignano Del Friuli 13
Pune 10
Munich 9
San Diego 8
Des Moines 7
Izmir 7
Trieste 7
Cork 6
Dong Ket 6
Ottawa 6
Cagliari 4
Hefei 4
Los Angeles 4
Shenyang 4
Barcelona 3
Bologna 3
Grenoble 3
Kraków 3
Kunming 3
Modena 3
Vienna 3
Baotou 2
Brussels 2
Guangzhou 2
Hangzhou 2
Helsinki 2
Nanjing 2
Ogden 2
Osaka 2
Redwood City 2
Taiyuan 2
Warsaw 2
Wuhan 2
Amsterdam 1
Budapest 1
Changsha 1
Chongqing 1
Graz 1
Heverlee 1
Hsinchu 1
Huaihua 1
Indiana 1
Jinan 1
Karlsruhe 1
Lappeenranta 1
Lima 1
Lund 1
Nanchang 1
Norwalk 1
Nürnberg 1
Olomouc 1
Phoenix 1
Preganziol 1
Quzhou 1
Sacile 1
San Francisco 1
Shanghai 1
Simi Valley 1
Taizhou 1
Tappahannock 1
Verona 1
Wenzhou 1
Wuxi 1
Xi'an 1
Zhengzhou 1
Zurich 1
Totale 1.287
Nome #
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 167
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 144
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 143
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 132
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 131
The impact of interface states on the mobility and the drive current of III-V MOSFETs 128
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 121
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 118
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 116
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 109
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 107
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials 94
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs 86
An Improved Semi-classical Approach for Simulating Tunnel-FETs 67
Development and Optimisation of Advanced Simulation Models for Nanoscale FETs with Alternative Channel Materials 54
Totale 1.717
Categoria #
all - tutte 5.096
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.096


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020277 0 0 0 0 33 62 46 49 25 28 11 23
2020/2021203 6 36 2 25 12 27 14 18 21 6 24 12
2021/2022115 5 10 3 5 1 8 3 9 0 22 33 16
2022/2023164 15 24 4 30 7 38 0 11 21 1 3 10
2023/202465 11 5 1 1 4 24 0 12 3 2 1 1
2024/202562 3 16 11 17 15 0 0 0 0 0 0 0
Totale 1.717