OSGNACH, Patrik
 Distribuzione geografica
Continente #
NA - Nord America 1.238
EU - Europa 316
AS - Asia 74
AF - Africa 1
Continente sconosciuto - Info sul continente non disponibili 1
SA - Sud America 1
Totale 1.631
Nazione #
US - Stati Uniti d'America 1.232
IT - Italia 95
UA - Ucraina 83
DE - Germania 48
CN - Cina 46
FI - Finlandia 25
IE - Irlanda 20
IN - India 11
GB - Regno Unito 8
SE - Svezia 7
TR - Turchia 7
CA - Canada 6
FR - Francia 6
VN - Vietnam 6
PL - Polonia 5
AT - Austria 4
GR - Grecia 4
BE - Belgio 3
ES - Italia 3
JP - Giappone 3
CH - Svizzera 2
NL - Olanda 2
A2 - ???statistics.table.value.countryCode.A2??? 1
DZ - Algeria 1
HU - Ungheria 1
PE - Perù 1
TW - Taiwan 1
Totale 1.631
Città #
Woodbridge 200
Houston 145
Ann Arbor 128
Fairfield 120
Chandler 71
Wilmington 68
Ashburn 60
Seattle 59
Jacksonville 55
Udine 45
Dearborn 41
Cambridge 32
Beijing 16
Princeton 15
Dublin 14
Cervignano Del Friuli 13
Pune 10
San Diego 8
Boardman 7
Des Moines 7
Izmir 7
Munich 7
Trieste 7
Cork 6
Dong Ket 6
Ottawa 6
Cagliari 4
Hefei 4
Shenyang 4
Barcelona 3
Bologna 3
Grenoble 3
Kraków 3
Kunming 3
Modena 3
Vienna 3
Baotou 2
Brussels 2
Hangzhou 2
Los Angeles 2
Nanjing 2
Ogden 2
Osaka 2
Redwood City 2
Taiyuan 2
Warsaw 2
Wuhan 2
Amsterdam 1
Budapest 1
Changsha 1
Chongqing 1
Graz 1
Guangzhou 1
Helsinki 1
Heverlee 1
Hsinchu 1
Indiana 1
Jinan 1
Karlsruhe 1
Lappeenranta 1
Lima 1
Lund 1
Nanchang 1
Norwalk 1
Nürnberg 1
Phoenix 1
Preganziol 1
Quzhou 1
Sacile 1
San Francisco 1
Simi Valley 1
Tappahannock 1
Verona 1
Wenzhou 1
Zhengzhou 1
Zurich 1
Totale 1.237
Nome #
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 163
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 140
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 137
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 127
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 127
The impact of interface states on the mobility and the drive current of III-V MOSFETs 124
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 116
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 114
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 113
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 106
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 103
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials 91
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs 82
An Improved Semi-classical Approach for Simulating Tunnel-FETs 62
Development and Optimisation of Advanced Simulation Models for Nanoscale FETs with Alternative Channel Materials 48
Totale 1.653
Categoria #
all - tutte 4.132
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.132


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201977 0 0 0 0 0 0 0 0 0 0 48 29
2019/2020404 26 38 14 49 33 62 46 49 25 28 11 23
2020/2021203 6 36 2 25 12 27 14 18 21 6 24 12
2021/2022115 5 10 3 5 1 8 3 9 0 22 33 16
2022/2023164 15 24 4 30 7 38 0 11 21 1 3 10
2023/202463 11 5 1 1 4 24 0 12 3 2 0 0
Totale 1.653