| Nome |
# |
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Engineering of metal-MoS2 contacts to overcome Fermi level pinning, file e27ce0ca-1fca-055e-e053-6605fe0a7873
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156
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Advanced models for simulation of planar and gate-all-around nanoscale MOSFETs, file e27ce0c5-7380-055e-e053-6605fe0a7873
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144
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Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures, file 861f71f1-538a-4ebe-8d67-21d35dcbfec5
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53
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Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs, file e27ce0c3-2751-055e-e053-6605fe0a7873
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51
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Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating, file e27ce0c7-8462-055e-e053-6605fe0a7873
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47
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Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off, file 95ea89c1-f9b8-4c1f-b091-89208f7bd878
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35
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Growth and structure of singly oriented single-layer tungsten disulfide on Au(111), file e27ce0c8-ee3a-055e-e053-6605fe0a7873
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34
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Mixed Cation Halide Perovskite under Environmental and Physical Stress, file e27ce0c9-6fdb-055e-e053-6605fe0a7873
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32
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Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation, file 14ab653e-692e-4ebf-b82d-60c0eb88e259
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31
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Resistance hysteresis correlated with synchrotron radiation surface studies in atomic sp2 layers of carbon synthesized on ferroelectric (001) lead zirconate titanate in an ultrahigh vacuum, file e27ce0c9-1b57-055e-e053-6605fe0a7873
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23
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Epitaxial growth of single-orientation high-quality MoS2 monolayers, file e27ce0c9-49c6-055e-e053-6605fe0a7873
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23
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Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies, file e27ce0ca-1ac2-055e-e053-6605fe0a7873
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23
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Growth Mechanism and Thermal Stability of a MoS2-Graphene Interface: A High-Resolution Core-Level Photoelectron Spectroscopy Study, file 0c14f2e1-47c6-43e1-9640-bcec002f7e23
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21
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Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors, file e27ce0c9-a6c3-055e-e053-6605fe0a7873
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16
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Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach, file e27ce0ca-112d-055e-e053-6605fe0a7873
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16
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Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme, file 6da2e71f-d1a0-48ff-b806-b36d40a256f3
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15
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Momentum-resolved linear dichroism in bilayer MoS2, file e27ce0c8-e62c-055e-e053-6605fe0a7873
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13
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Spin Structure of K Valleys in Single-Layer WS2 on Au(111), file e27ce0c9-49c8-055e-e053-6605fe0a7873
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13
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New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits, file e27ce0c5-4332-055e-e053-6605fe0a7873
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12
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Electron–phonon coupling in single-layer MoS2, file e27ce0c9-3a1b-055e-e053-6605fe0a7873
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11
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80% Valley Polarization of Free Carriers in Singly Oriented Single-Layer WS2 on Au(111), file e27ce0c8-e470-055e-e053-6605fe0a7873
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10
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Novel single-layer vanadium sulphide phases, file e27ce0c8-e477-055e-e053-6605fe0a7873
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10
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80% Valley Polarization of Free Carriers in Singly Oriented Single-Layer WS2 on Au(111), file e27ce0c8-e472-055e-e053-6605fe0a7873
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9
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Photoemission investigation of oxygen intercalated epitaxial graphene on Ru(0001), file e27ce0c9-49ca-055e-e053-6605fe0a7873
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9
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An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs, file e27ce0c2-b4ee-055e-e053-6605fe0a7873
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8
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Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes, file e27ce0c3-67b3-055e-e053-6605fe0a7873
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8
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Compositional Phase Change of Early Transition Metal Diselenide (VSe2 and TiSe2) Ultrathin Films by Postgrowth Annealing, file e27ce0c8-f05b-055e-e053-6605fe0a7873
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8
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Layer and orbital interference effects in photoemission from transition metal dichalcogenides, file e27ce0c9-49c4-055e-e053-6605fe0a7873
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8
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Anisotropic strain in epitaxial single-layer molybdenum disulfide on Ag(110), file 3b890601-8a64-4839-ac24-850930644aff
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7
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Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation, file 8518144b-7b25-47f1-b5f1-b9fbf8238f39
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7
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A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator, file 8800e456-7675-4330-9b1b-3ce1bf6b5f77
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7
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Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating, file e27ce0c5-7d72-055e-e053-6605fe0a7873
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7
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Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section, file e27ce0c3-6a55-055e-e053-6605fe0a7873
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6
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Growth and structure of singly oriented single-layer tungsten disulfide on Au(111), file e27ce0c8-e47d-055e-e053-6605fe0a7873
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6
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Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme, file 009481f1-8a74-42b0-8c24-715c47952471
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5
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On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices, file e27ce0c1-e7e2-055e-e053-6605fe0a7873
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5
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Ion Implantation as an Approach for Structural Modifications and Functionalization of Ti3C2TxMXenes, file e27ce0c9-6fdd-055e-e053-6605fe0a7873
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5
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Ultrafast electronic linewidth broadening in the C 1s core level of graphene, file e912bc70-32e5-442d-a252-97d60150a8ab
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5
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Reinterpreting Low Resistance in Sb–MoS$_\text{2}$ Ohmic Contacts by Means of Ab Initio Transport Simulations, file eedbf8f9-b814-4a69-9846-a49dc779bbbf
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5
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Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures, file f0971387-fa0f-48b1-8f91-dc609bb32fc1
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5
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Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions, file d96dc4c8-fd99-45c4-a2c7-b8906b8190e4
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4
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Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs, file e27ce0c1-ee08-055e-e053-6605fe0a7873
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4
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Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs, file e27ce0c1-ef1e-055e-e053-6605fe0a7873
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4
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A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors, file e27ce0c1-f1a5-055e-e053-6605fe0a7873
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4
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Improved surface roughness modeling and mobility projections in thin film MOSFETs, file e27ce0c2-4191-055e-e053-6605fe0a7873
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4
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Electron–phonon coupling in single-layer MoS2, file e27ce0c8-e465-055e-e053-6605fe0a7873
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4
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Spin Structure of K Valleys in Single-Layer WS2 on Au(111), file e27ce0c9-1b5c-055e-e053-6605fe0a7873
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4
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Epitaxial growth of single-orientation high-quality MoS2 monolayers, file e27ce0c9-430c-055e-e053-6605fe0a7873
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4
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Engineering of metal-MoS2 contacts to overcome Fermi level pinning, file e27ce0ca-1fc9-055e-e053-6605fe0a7873
|
4
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Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions, file 08523866-1bcf-44d6-a507-ab157f9bc4f0
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3
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Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions, file 77ef5481-7630-4d5a-afe2-caaef07e1e92
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3
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Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon, file e27ce0c9-f183-055e-e053-6605fe0a7873
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3
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Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies, file e27ce0c9-ffff-055e-e053-6605fe0a7873
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3
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Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain, file e27ce0c1-c819-055e-e053-6605fe0a7873
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2
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Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel, file e27ce0c1-e00a-055e-e053-6605fe0a7873
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2
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The impact of interface states on the mobility and the drive current of III-V MOSFETs, file e27ce0c1-ef17-055e-e053-6605fe0a7873
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2
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Performance of III-V nanoscale MOSFETs: a simulation study, file e27ce0c1-f598-055e-e053-6605fe0a7873
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2
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Dual-Route Hydrogenation of the Graphene/Ni Interface, file e27ce0c9-1b50-055e-e053-6605fe0a7873
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2
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Momentum-resolved linear dichroism in bilayer MoS2, file e27ce0c9-2641-055e-e053-6605fe0a7873
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2
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Editorial: Selected papers from the 8th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2022), file 428e50db-d7ae-4db0-8c7c-e1bd9c7234a1
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1
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Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts, file 42b73833-b48c-4d24-9b88-8cfca6a4c6ac
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1
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The effect of structural disorder on the hydrogen loading into the graphene/nickel interface, file c5c92aab-9716-4d6a-9662-762e2eb3ab65
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1
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CO adsorption, reduction and oxidation on Pb(Zr,Ti)O3(001) surfaces associated with negatively charged gold nanoparticles, file c7f8e2d4-f927-43de-86ba-1283a193d7a2
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1
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The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs, file c8cdfe1a-3375-4797-97d3-2f19bb725ac8
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1
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Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off, file d1844737-a71e-47cd-a37a-bda8cf465007
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1
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A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs, file e27ce0c1-def8-055e-e053-6605fe0a7873
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1
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State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors, file e27ce0c2-2013-055e-e053-6605fe0a7873
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1
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Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps, file e27ce0c2-3a97-055e-e053-6605fe0a7873
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1
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Photoemission investigation of oxygen intercalated epitaxial graphene on Ru(0001), file e27ce0c8-f057-055e-e053-6605fe0a7873
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1
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Strong ferromagnetic coupling and tunable easy magnetization directions of FexCo1−x layer(s) intercalated under graphene, file e27ce0c9-1b5d-055e-e053-6605fe0a7873
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1
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Interfacial two-dimensional oxide enhances photocatalytic activity of graphene/titania via electronic structure modification, file e27ce0c9-49d0-055e-e053-6605fe0a7873
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1
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| Totale |
981 |