IRIS
LIZZIT, Daniel
 Distribuzione geografica
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Continente #
NA - Nord America 2.955
AS - Asia 1.481
EU - Europa 1.141
SA - Sud America 254
AF - Africa 44
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 2
AN - Antartide 1
Totale 5.883
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Nazione #
US - Stati Uniti d'America 2.900
SG - Singapore 755
IT - Italia 352
CN - Cina 296
BR - Brasile 219
HK - Hong Kong 169
DE - Germania 147
UA - Ucraina 121
RU - Federazione Russa 115
VN - Vietnam 82
IE - Irlanda 66
FI - Finlandia 65
SE - Svezia 50
FR - Francia 41
NL - Olanda 38
IN - India 37
GB - Regno Unito 36
AT - Austria 32
CA - Canada 31
TR - Turchia 26
KR - Corea 23
RO - Romania 18
BE - Belgio 16
AR - Argentina 15
BD - Bangladesh 14
ZA - Sudafrica 14
TW - Taiwan 13
MX - Messico 12
JP - Giappone 11
PL - Polonia 9
EC - Ecuador 7
ES - Italia 7
SA - Arabia Saudita 7
TG - Togo 7
MA - Marocco 6
CH - Svizzera 5
PK - Pakistan 5
DZ - Algeria 4
GR - Grecia 4
IQ - Iraq 4
AM - Armenia 3
AZ - Azerbaigian 3
CO - Colombia 3
EU - Europa 3
IR - Iran 3
JM - Giamaica 3
JO - Giordania 3
LT - Lituania 3
PH - Filippine 3
PY - Paraguay 3
UZ - Uzbekistan 3
VE - Venezuela 3
BG - Bulgaria 2
CI - Costa d'Avorio 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
GE - Georgia 2
HN - Honduras 2
HU - Ungheria 2
ID - Indonesia 2
KE - Kenya 2
KG - Kirghizistan 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
LK - Sri Lanka 2
LU - Lussemburgo 2
PS - Palestinian Territory 2
TH - Thailandia 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AE - Emirati Arabi Uniti 1
AQ - Antartide 1
BO - Bolivia 1
BW - Botswana 1
CL - Cile 1
CM - Camerun 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
EE - Estonia 1
EG - Egitto 1
ET - Etiopia 1
GA - Gabon 1
GM - Gambi 1
GT - Guatemala 1
HR - Croazia 1
IL - Israele 1
IS - Islanda 1
LB - Libano 1
LV - Lettonia 1
MZ - Mozambico 1
NI - Nicaragua 1
NP - Nepal 1
NR - Nauru 1
NZ - Nuova Zelanda 1
PT - Portogallo 1
SI - Slovenia 1
SO - Somalia 1
TN - Tunisia 1
VC - Saint Vincent e Grenadine 1
Totale 5.881
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Città #
Singapore 345
Woodbridge 327
Chandler 268
Fairfield 232
Houston 201
Ashburn 187
Ann Arbor 183
Hong Kong 166
Beijing 147
Udine 123
Wilmington 113
Seattle 90
Cambridge 88
Jacksonville 75
Boardman 74
Dearborn 63
Dublin 61
Los Angeles 52
Princeton 47
Buffalo 45
Redmond 42
Lappeenranta 28
Dallas 27
Munich 27
Ho Chi Minh City 22
Hefei 20
Milan 20
Redondo Beach 20
Vienna 20
New York 19
São Paulo 19
Trieste 19
San Michele al Tagliamento 18
Timisoara 18
Amsterdam 17
Cervignano Del Friuli 17
Hanoi 17
Izmir 17
Seoul 17
Des Moines 15
East Aurora 15
Modena 15
Brussels 14
Nuremberg 14
Atlanta 12
Brooklyn 12
Ogden 12
Bologna 10
Guangzhou 10
Boston 9
Mumbai 9
San Diego 9
Warsaw 9
Belo Horizonte 8
Johannesburg 8
Norwalk 8
Ottawa 8
Santa Clara 8
Chengdu 7
Chicago 7
Hangzhou 7
Lomé 7
Orem 7
Taipei 7
Tokyo 7
Brasília 6
Charlotte 6
Denver 6
Dong Ket 6
Düsseldorf 6
Frankfurt am Main 6
Guarulhos 6
Montreal 6
Porto Alegre 6
Pune 6
Rio de Janeiro 6
Stockholm 6
Ankara 5
Chennai 5
Cork 5
Curitiba 5
Da Nang 5
Helsinki 5
London 5
Mexico City 5
Palaiseau 5
The Dalles 5
Verona 5
Wuhan 5
Buenos Aires 4
Cagliari 4
Changsha 4
Dhaka 4
Fortaleza 4
Haiphong 4
Hyderabad 4
Lauterbourg 4
Moscow 4
Nanchang 4
Nanjing 4
Totale 3.721
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Nome #
Improved surface roughness modeling and mobility projections in thin film MOSFETs 224
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 206
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 205
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 186
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 178
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 178
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 178
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 176
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section 171
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 165
The impact of interface states on the mobility and the drive current of III-V MOSFETs 160
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 157
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 153
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 153
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 150
Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme 149
Advanced models for simulation of planar and gate-all-around nanoscale MOSFETs 148
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 132
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 124
A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors 121
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs 116
Sub-60mV/dec Swing and Drive Current in Dirac-Source FETs: a Design Study based on First-Principle Transport Simulations 105
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions 105
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies 103
Engineering of metal-MoS2 contacts to overcome Fermi level pinning 101
Compositional Phase Change of Early Transition Metal Diselenide (VSe2 and TiSe2) Ultrathin Films by Postgrowth Annealing 87
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off 82
Electron–phonon coupling in single-layer MoS2 78
Performance of III-V nanoscale MOSFETs: a simulation study 77
Anisotropic strain in epitaxial single-layer molybdenum disulfide on Ag(110) 77
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator 73
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts 73
Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices : (Invited Paper) 72
80% Valley Polarization of Free Carriers in Singly Oriented Single-Layer WS2 on Au(111) 71
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures 70
A Novel Ferroelectric MemCapacitor Enabling Multilevel Operation 68
Epitaxial growth of single-orientation high-quality MoS2 monolayers 65
CO adsorption, reduction and oxidation on Pb(Zr,Ti)O3(001) surfaces associated with negatively charged gold nanoparticles 65
Dual-Route Hydrogenation of the Graphene/Ni Interface 63
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon 60
Editorial: Selected papers from the 8th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2022) 57
Mixed Cation Halide Perovskite under Environmental and Physical Stress 57
Transition metal carbides (MXenes) for efficient NiO-based inverted perovskite solar cells 56
Novel single-layer vanadium sulphide phases 56
The effect of structural disorder on the hydrogen loading into the graphene/nickel interface 55
Growth Mechanism and Thermal Stability of a MoS2-Graphene Interface: A High-Resolution Core-Level Photoelectron Spectroscopy Study 55
Growth and structure of singly oriented single-layer tungsten disulfide on Au(111) 54
Momentum-resolved linear dichroism in bilayer MoS2 54
Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation 51
Interfacial two-dimensional oxide enhances photocatalytic activity of graphene/titania via electronic structure modification 49
Strong ferromagnetic coupling and tunable easy magnetization directions of FexCo1−x layer(s) intercalated under graphene 48
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach 47
Resistance hysteresis correlated with synchrotron radiation surface studies in atomic sp2 layers of carbon synthesized on ferroelectric (001) lead zirconate titanate in an ultrahigh vacuum 46
Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors 46
Modelling and Design of Short Channel Ferroelectric FETs with a Metal Interlayer Easing the Multilevel Operation 45
Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations 44
Photoemission investigation of oxygen intercalated epitaxial graphene on Ru(0001) 43
Interplay among Hydrogen Chemisorption, Intercalation, and Bulk Diffusion at the Graphene-Covered Ni(111) Crystal 43
Spin Structure of K Valleys in Single-Layer WS2 on Au(111) 42
Layer and orbital interference effects in photoemission from transition metal dichalcogenides 42
Ion Implantation as an Approach for Structural Modifications and Functionalization of Ti3C2TxMXenes 42
Ultrafast electronic linewidth broadening in the C 1s core level of graphene 34
An LGD model with extrinsic nucleations for polarization dynamics in ferroelectric materials and devices 33
Multi-level Operation of FeFETs Memristors: The Crucial Role of Three Dimensional Effects 33
null 25
Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer 25
Ab-Initio Transport Study of Source-to-Channel Resistance in Metal-MoS2 Top Contacts Including Image Force Barrier Lowering in a Heterogeneous Dielectric Environment 2
Operation and Design of Dirac-Source FETs Using Ab Initio Transport Simulations: Subthreshold Swing and Drive Current 1
Totale 6.110
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Categoria #
all - tutte 26.705
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 26.705
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021203 0 0 0 0 0 42 10 36 38 12 37 28
2021/2022399 22 24 25 32 3 15 16 28 6 47 116 65
2022/2023580 54 64 6 89 46 141 7 41 72 16 19 25
2023/2024253 33 15 11 15 23 32 12 23 21 32 7 29
2024/20251.260 28 71 39 39 39 73 156 129 113 87 221 265
2025/20261.486 185 282 205 165 431 218 0 0 0 0 0 0
Totale 6.110