IRIS
LIZZIT, Daniel
 Distribuzione geografica
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Continente #
NA - Nord America 2.544
EU - Europa 950
AS - Asia 523
SA - Sud America 101
AF - Africa 29
Continente sconosciuto - Info sul continente non disponibili 4
OC - Oceania 1
Totale 4.152
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Nazione #
US - Stati Uniti d'America 2.519
SG - Singapore 272
IT - Italia 266
DE - Germania 133
CN - Cina 129
UA - Ucraina 120
RU - Federazione Russa 109
BR - Brasile 93
IE - Irlanda 59
FI - Finlandia 55
SE - Svezia 46
FR - Francia 32
NL - Olanda 26
GB - Regno Unito 23
KR - Corea 23
AT - Austria 21
TR - Turchia 20
RO - Romania 18
CA - Canada 17
BE - Belgio 16
IN - India 15
HK - Hong Kong 12
TW - Taiwan 12
ZA - Sudafrica 9
TG - Togo 7
VN - Vietnam 7
BD - Bangladesh 5
MA - Marocco 5
AR - Argentina 4
GR - Grecia 4
CH - Svizzera 3
DZ - Algeria 3
EU - Europa 3
IR - Iran 3
JP - Giappone 3
MX - Messico 3
PL - Polonia 3
AM - Armenia 2
AZ - Azerbaigian 2
BG - Bulgaria 2
DK - Danimarca 2
ES - Italia 2
GE - Georgia 2
HU - Ungheria 2
JM - Giamaica 2
LA - Repubblica Popolare Democratica del Laos 2
LK - Sri Lanka 2
LU - Lussemburgo 2
PY - Paraguay 2
SA - Arabia Saudita 2
TH - Thailandia 2
UZ - Uzbekistan 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BO - Bolivia 1
BW - Botswana 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
EC - Ecuador 1
EG - Egitto 1
GA - Gabon 1
GT - Guatemala 1
HN - Honduras 1
HR - Croazia 1
IL - Israele 1
IS - Islanda 1
JO - Giordania 1
KG - Kirghizistan 1
KZ - Kazakistan 1
LT - Lituania 1
LV - Lettonia 1
NZ - Nuova Zelanda 1
PH - Filippine 1
PK - Pakistan 1
PT - Portogallo 1
TN - Tunisia 1
Totale 4.152
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Città #
Woodbridge 327
Chandler 268
Fairfield 232
Houston 199
Singapore 191
Ann Arbor 183
Ashburn 114
Wilmington 113
Udine 101
Seattle 90
Cambridge 88
Boardman 74
Jacksonville 73
Dearborn 63
Dublin 54
Beijing 49
Princeton 47
Redmond 42
Lappeenranta 19
San Michele al Tagliamento 18
Timisoara 18
Trieste 18
Cervignano Del Friuli 17
Seoul 17
Izmir 16
Los Angeles 16
Milan 16
Munich 16
Des Moines 15
Brussels 14
Nuremberg 14
Ogden 12
Vienna 12
Hong Kong 11
Guangzhou 9
San Diego 9
Amsterdam 8
New York 8
Norwalk 8
Ottawa 8
São Paulo 8
Chengdu 7
Lomé 7
Bologna 6
Dong Ket 6
Düsseldorf 6
Pune 6
Taipei 6
Brooklyn 5
Cork 5
Helsinki 5
Modena 5
Palaiseau 5
Wuhan 5
Belo Horizonte 4
Cagliari 4
Curitiba 4
Hefei 4
Johannesburg 4
Lauterbourg 4
Montreal 4
Nanchang 4
Nanjing 4
Portsmouth 4
Atlanta 3
Bochum 3
Brescia 3
Changsha 3
Charlotte 3
Chicago 3
Frankfurt am Main 3
Grenoble 3
Guarulhos 3
Hangzhou 3
Kunming 3
Moscow 3
Paris 3
Redwood City 3
San Francisco 3
Santa Clara 3
Shenyang 3
Simi Valley 3
Venice 3
Warsaw 3
Xi'an 3
Ankara 2
Anápolis 2
Asunción 2
Azzano Decimo 2
Baku 2
Bangkok 2
Belluno 2
Boston 2
Bremen 2
Buenos Aires 2
Bures-sur-Yvette 2
Campinas 2
Casablanca 2
Chennai 2
Colombo 2
Totale 2.822
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Nome #
Improved surface roughness modeling and mobility projections in thin film MOSFETs 192
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 179
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 177
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 163
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 153
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 151
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 147
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section 143
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 142
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 141
The impact of interface states on the mobility and the drive current of III-V MOSFETs 139
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 135
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 130
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 128
Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme 127
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 121
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 113
Advanced models for simulation of planar and gate-all-around nanoscale MOSFETs 113
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 109
A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors 96
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs 95
Compositional Phase Change of Early Transition Metal Diselenide (VSe2 and TiSe2) Ultrathin Films by Postgrowth Annealing 70
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies 68
Performance of III-V nanoscale MOSFETs: a simulation study 63
Anisotropic strain in epitaxial single-layer molybdenum disulfide on Ag(110) 53
Electron–phonon coupling in single-layer MoS2 51
Engineering of metal-MoS2 contacts to overcome Fermi level pinning 51
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions 49
Dual-Route Hydrogenation of the Graphene/Ni Interface 47
80% Valley Polarization of Free Carriers in Singly Oriented Single-Layer WS2 on Au(111) 44
CO adsorption, reduction and oxidation on Pb(Zr,Ti)O3(001) surfaces associated with negatively charged gold nanoparticles 41
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon 41
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator 40
Epitaxial growth of single-orientation high-quality MoS2 monolayers 40
Sub-60mV/dec Swing and Drive Current in Dirac-Source FETs: a Design Study based on First-Principle Transport Simulations 39
Mixed Cation Halide Perovskite under Environmental and Physical Stress 38
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures 37
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off 37
Growth and structure of singly oriented single-layer tungsten disulfide on Au(111) 37
Momentum-resolved linear dichroism in bilayer MoS2 37
Editorial: Selected papers from the 8th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2022) 35
Interfacial two-dimensional oxide enhances photocatalytic activity of graphene/titania via electronic structure modification 35
Transition metal carbides (MXenes) for efficient NiO-based inverted perovskite solar cells 33
Growth Mechanism and Thermal Stability of a MoS2-Graphene Interface: A High-Resolution Core-Level Photoelectron Spectroscopy Study 32
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts 31
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach 31
Strong ferromagnetic coupling and tunable easy magnetization directions of FexCo1−x layer(s) intercalated under graphene 30
Resistance hysteresis correlated with synchrotron radiation surface studies in atomic sp2 layers of carbon synthesized on ferroelectric (001) lead zirconate titanate in an ultrahigh vacuum 30
Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices : (Invited Paper) 29
Novel single-layer vanadium sulphide phases 29
The effect of structural disorder on the hydrogen loading into the graphene/nickel interface 27
Spin Structure of K Valleys in Single-Layer WS2 on Au(111) 26
Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors 26
Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation 26
Photoemission investigation of oxygen intercalated epitaxial graphene on Ru(0001) 25
Layer and orbital interference effects in photoemission from transition metal dichalcogenides 23
Ion Implantation as an Approach for Structural Modifications and Functionalization of Ti3C2TxMXenes 23
A Novel Ferroelectric MemCapacitor Enabling Multilevel Operation 20
Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations 19
Multi-level Operation of FeFETs Memristors: The Crucial Role of Three Dimensional Effects 17
Interplay among Hydrogen Chemisorption, Intercalation, and Bulk Diffusion at the Graphene-Covered Ni(111) Crystal 17
Ultrafast electronic linewidth broadening in the C 1s core level of graphene 15
Totale 4.356
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Categoria #
all - tutte 20.290
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 20.290
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202051 0 0 0 0 0 0 0 0 0 0 11 40
2020/2021444 6 53 7 108 67 42 10 36 38 12 37 28
2021/2022399 22 24 25 32 3 15 16 28 6 47 116 65
2022/2023580 54 64 6 89 46 141 7 41 72 16 19 25
2023/2024253 33 15 11 15 23 32 12 23 21 32 7 29
2024/2025992 28 71 39 39 39 73 156 129 113 87 218 0
Totale 4.356