IRIS
LIZZIT, Daniel
 Distribuzione geografica
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Continente #
NA - Nord America 3.759
AS - Asia 1.764
EU - Europa 1.350
SA - Sud America 297
Continente sconosciuto - Info sul continente non disponibili 246
AF - Africa 61
OC - Oceania 2
AN - Antartide 1
Totale 7.480
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Nazione #
US - Stati Uniti d'America 3.672
SG - Singapore 811
IT - Italia 442
CN - Cina 353
BR - Brasile 243
HK - Hong Kong 200
DE - Germania 172
UA - Ucraina 123
VN - Vietnam 122
RU - Federazione Russa 115
FR - Francia 92
FI - Finlandia 68
IE - Irlanda 67
IN - India 60
SE - Svezia 50
NL - Olanda 46
CA - Canada 45
GB - Regno Unito 42
AT - Austria 34
BD - Bangladesh 33
TR - Turchia 31
KR - Corea 26
AR - Argentina 20
RO - Romania 18
BE - Belgio 17
TW - Taiwan 17
ES - Italia 16
MX - Messico 16
ZA - Sudafrica 16
JP - Giappone 13
SA - Arabia Saudita 13
PK - Pakistan 12
EC - Ecuador 11
ID - Indonesia 10
JM - Giamaica 10
PL - Polonia 10
KE - Kenya 9
CH - Svizzera 8
CO - Colombia 8
IQ - Iraq 8
MA - Marocco 8
PH - Filippine 7
TG - Togo 7
LT - Lituania 6
AZ - Azerbaigian 5
VE - Venezuela 5
DZ - Algeria 4
GR - Grecia 4
JO - Giordania 4
PY - Paraguay 4
TT - Trinidad e Tobago 4
UZ - Uzbekistan 4
AM - Armenia 3
CZ - Repubblica Ceca 3
EU - Europa 3
HU - Ungheria 3
IR - Iran 3
KZ - Kazakistan 3
NP - Nepal 3
PS - Palestinian Territory 3
TH - Thailandia 3
TN - Tunisia 3
BG - Bulgaria 2
BO - Bolivia 2
CI - Costa d'Avorio 2
CL - Cile 2
DK - Danimarca 2
DO - Repubblica Dominicana 2
GE - Georgia 2
HN - Honduras 2
IL - Israele 2
KG - Kirghizistan 2
LA - Repubblica Popolare Democratica del Laos 2
LB - Libano 2
LK - Sri Lanka 2
LU - Lussemburgo 2
LY - Libia 2
MY - Malesia 2
PR - Porto Rico 2
UY - Uruguay 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AL - Albania 1
AO - Angola 1
AQ - Antartide 1
BB - Barbados 1
BW - Botswana 1
CG - Congo 1
CM - Camerun 1
CR - Costa Rica 1
EE - Estonia 1
EG - Egitto 1
ET - Etiopia 1
GA - Gabon 1
GM - Gambi 1
GT - Guatemala 1
HR - Croazia 1
IS - Islanda 1
KN - Saint Kitts e Nevis 1
LV - Lettonia 1
MN - Mongolia 1
Totale 7.227
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Città #
Singapore 396
Woodbridge 328
Ashburn 284
Chandler 268
Fairfield 232
San Jose 230
Houston 201
Hong Kong 195
Ann Arbor 184
Beijing 161
Udine 138
Wilmington 113
Council Bluffs 97
Seattle 93
Boardman 89
Cambridge 89
Jacksonville 78
Dearborn 63
Dublin 62
Los Angeles 60
Lauterbourg 50
Buffalo 48
Princeton 47
Redmond 42
Milan 41
Santa Clara 38
Ho Chi Minh City 35
Dallas 33
Lappeenranta 28
New York 28
Munich 27
Hanoi 25
São Paulo 23
Atlanta 22
Amsterdam 21
Trieste 21
Vienna 21
Hefei 20
Redondo Beach 20
Orem 19
Chicago 18
Des Moines 18
San Michele al Tagliamento 18
Timisoara 18
Brooklyn 17
Cervignano Del Friuli 17
Izmir 17
Nuremberg 17
Seoul 17
Brussels 15
East Aurora 15
Frankfurt am Main 15
Modena 15
The Dalles 15
Ogden 12
Mumbai 11
Bologna 10
Guangzhou 10
Johannesburg 10
San Diego 10
Taipei 10
Warsaw 10
Belo Horizonte 9
Boston 9
Düsseldorf 9
Hangzhou 9
Nairobi 9
Tokyo 9
Chennai 8
Dhaka 8
Helsinki 8
London 8
Norwalk 8
Ottawa 8
Brasília 7
Charlotte 7
Chengdu 7
Da Nang 7
Denver 7
Irvine 7
Kingston 7
Lomé 7
Montreal 7
Rio de Janeiro 7
Rome 7
Salt Lake City 7
Cerdanyola del Vallès 6
Changsha 6
Dong Ket 6
Dresden 6
Guarulhos 6
Haiphong 6
Mexico City 6
Miami 6
New Delhi 6
Newark 6
Porto Alegre 6
Pune 6
Stockholm 6
Toronto 6
Totale 4.555
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Nome #
Improved surface roughness modeling and mobility projections in thin film MOSFETs 243
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 218
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 218
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 206
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 199
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 195
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 194
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 194
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section 189
Advanced models for simulation of planar and gate-all-around nanoscale MOSFETs 186
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 185
The impact of interface states on the mobility and the drive current of III-V MOSFETs 180
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 176
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 176
Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme 175
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 173
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 171
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions 159
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 155
Sub-60mV/dec Swing and Drive Current in Dirac-Source FETs: a Design Study based on First-Principle Transport Simulations 149
Engineering of metal-MoS2 contacts to overcome Fermi level pinning 147
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 145
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs 139
A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors 138
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies 126
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off 112
Compositional Phase Change of Early Transition Metal Diselenide (VSe2 and TiSe2) Ultrathin Films by Postgrowth Annealing 111
A Novel Ferroelectric MemCapacitor Enabling Multilevel Operation 101
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures 97
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts 96
Performance of III-V nanoscale MOSFETs: a simulation study 96
Modelling and Design of Short Channel Ferroelectric FETs with a Metal Interlayer Easing the Multilevel Operation 96
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator 95
Electron–phonon coupling in single-layer MoS2 95
80% Valley Polarization of Free Carriers in Singly Oriented Single-Layer WS2 on Au(111) 94
Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices : (Invited Paper) 90
Anisotropic strain in epitaxial single-layer molybdenum disulfide on Ag(110) 90
Epitaxial growth of single-orientation high-quality MoS2 monolayers 86
Mixed Cation Halide Perovskite under Environmental and Physical Stress 81
Dual-Route Hydrogenation of the Graphene/Ni Interface 80
CO adsorption, reduction and oxidation on Pb(Zr,Ti)O3(001) surfaces associated with negatively charged gold nanoparticles 80
Editorial: Selected papers from the 8th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2022) 73
Transition metal carbides (MXenes) for efficient NiO-based inverted perovskite solar cells 70
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon 69
Novel single-layer vanadium sulphide phases 68
Strong ferromagnetic coupling and tunable easy magnetization directions of FexCo1−x layer(s) intercalated under graphene 65
Resistance hysteresis correlated with synchrotron radiation surface studies in atomic sp2 layers of carbon synthesized on ferroelectric (001) lead zirconate titanate in an ultrahigh vacuum 65
The effect of structural disorder on the hydrogen loading into the graphene/nickel interface 64
Interfacial two-dimensional oxide enhances photocatalytic activity of graphene/titania via electronic structure modification 64
Growth Mechanism and Thermal Stability of a MoS2-Graphene Interface: A High-Resolution Core-Level Photoelectron Spectroscopy Study 64
Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations 62
Growth and structure of singly oriented single-layer tungsten disulfide on Au(111) 62
Momentum-resolved linear dichroism in bilayer MoS2 62
Ab-Initio Transport Study of Source-to-Channel Resistance in Metal-MoS2 Top Contacts Including Image Force Barrier Lowering in a Heterogeneous Dielectric Environment 60
Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation 60
Spin Structure of K Valleys in Single-Layer WS2 on Au(111) 59
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach 57
Multi-level Operation of FeFETs Memristors: The Crucial Role of Three Dimensional Effects 56
Photoemission investigation of oxygen intercalated epitaxial graphene on Ru(0001) 56
Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors 56
Layer and orbital interference effects in photoemission from transition metal dichalcogenides 52
Interplay among Hydrogen Chemisorption, Intercalation, and Bulk Diffusion at the Graphene-Covered Ni(111) Crystal 51
An LGD model with extrinsic nucleations for polarization dynamics in ferroelectric materials and devices 50
Ultrafast electronic linewidth broadening in the C 1s core level of graphene 50
Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer 49
Ion Implantation as an Approach for Structural Modifications and Functionalization of Ti3C2TxMXenes 48
Operation and Design of Dirac-Source FETs Using Ab Initio Transport Simulations: Subthreshold Swing and Drive Current 24
Readout Current in HZO-Based Bilayer FTJs: Physical Mechanisms and Design Insight 19
Modelling of FEOL and BEOL Amorphous Gallium Oxide-based Ferroelectric FETs with a Metal Interlayer for Multilevel Operation in Short Channel Devices 9
Totale 7.480
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Categoria #
all - tutte 32.028
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 32.028
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022353 0 0 25 32 3 15 16 28 6 47 116 65
2022/2023580 54 64 6 89 46 141 7 41 72 16 19 25
2023/2024253 33 15 11 15 23 32 12 23 21 32 7 29
2024/20251.260 28 71 39 39 39 73 156 129 113 87 221 265
2025/20262.540 185 282 205 165 431 228 372 83 170 166 142 111
2026/2027316 65 166 85 0 0 0 0 0 0 0 0 0
Totale 7.480