IRIS
LIZZIT, Daniel
 Distribuzione geografica
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Continente #
NA - Nord America 3.293
AS - Asia 1.724
EU - Europa 1.259
SA - Sud America 284
AF - Africa 60
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 2
AN - Antartide 1
Totale 6.628
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Nazione #
US - Stati Uniti d'America 3.231
SG - Singapore 804
IT - Italia 370
CN - Cina 338
BR - Brasile 236
HK - Hong Kong 195
DE - Germania 161
UA - Ucraina 122
VN - Vietnam 122
RU - Federazione Russa 115
FR - Francia 92
FI - Finlandia 68
IE - Irlanda 67
IN - India 58
SE - Svezia 50
NL - Olanda 43
GB - Regno Unito 42
AT - Austria 34
CA - Canada 32
TR - Turchia 31
BD - Bangladesh 27
KR - Corea 25
AR - Argentina 20
RO - Romania 18
BE - Belgio 17
TW - Taiwan 16
ZA - Sudafrica 16
ES - Italia 15
MX - Messico 15
JP - Giappone 13
SA - Arabia Saudita 13
PK - Pakistan 12
ID - Indonesia 10
PL - Polonia 10
EC - Ecuador 8
IQ - Iraq 8
KE - Kenya 8
MA - Marocco 8
CO - Colombia 7
PH - Filippine 7
TG - Togo 7
CH - Svizzera 6
AZ - Azerbaigian 5
JM - Giamaica 5
LT - Lituania 5
DZ - Algeria 4
GR - Grecia 4
JO - Giordania 4
PY - Paraguay 4
UZ - Uzbekistan 4
VE - Venezuela 4
AM - Armenia 3
CZ - Repubblica Ceca 3
EU - Europa 3
HU - Ungheria 3
IR - Iran 3
NP - Nepal 3
TN - Tunisia 3
BG - Bulgaria 2
BO - Bolivia 2
CI - Costa d'Avorio 2
DK - Danimarca 2
DO - Repubblica Dominicana 2
GE - Georgia 2
HN - Honduras 2
IL - Israele 2
KG - Kirghizistan 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
LB - Libano 2
LK - Sri Lanka 2
LU - Lussemburgo 2
LY - Libia 2
MY - Malesia 2
PS - Palestinian Territory 2
TH - Thailandia 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AL - Albania 1
AO - Angola 1
AQ - Antartide 1
BW - Botswana 1
CG - Congo 1
CL - Cile 1
CM - Camerun 1
CR - Costa Rica 1
EE - Estonia 1
EG - Egitto 1
ET - Etiopia 1
GA - Gabon 1
GM - Gambi 1
GT - Guatemala 1
HR - Croazia 1
IS - Islanda 1
LV - Lettonia 1
MN - Mongolia 1
MZ - Mozambico 1
NI - Nicaragua 1
NR - Nauru 1
Totale 6.619
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Città #
Singapore 392
Woodbridge 327
Chandler 268
Ashburn 248
Fairfield 232
Houston 201
Hong Kong 190
Ann Arbor 183
San Jose 158
Beijing 154
Udine 123
Wilmington 113
Seattle 90
Cambridge 88
Boardman 75
Jacksonville 75
Dearborn 63
Dublin 62
Los Angeles 54
Lauterbourg 50
Buffalo 47
Princeton 47
Redmond 42
Ho Chi Minh City 35
Dallas 30
Lappeenranta 28
Munich 27
Hanoi 25
São Paulo 23
New York 22
Amsterdam 21
Milan 21
Vienna 21
Hefei 20
Redondo Beach 20
Trieste 20
Atlanta 19
Orem 19
San Michele al Tagliamento 18
Timisoara 18
Cervignano Del Friuli 17
Izmir 17
Nuremberg 17
Seoul 17
Des Moines 16
Brussels 15
East Aurora 15
Modena 15
The Dalles 15
Council Bluffs 14
Frankfurt am Main 14
Santa Clara 13
Brooklyn 12
Ogden 12
Mumbai 11
Bologna 10
Chicago 10
Guangzhou 10
Johannesburg 10
Taipei 10
Warsaw 10
Belo Horizonte 9
Boston 9
Hangzhou 9
San Diego 9
Tokyo 9
Chennai 8
Dhaka 8
Helsinki 8
Nairobi 8
Norwalk 8
Ottawa 8
Brasília 7
Chengdu 7
Da Nang 7
Lomé 7
London 7
Cerdanyola del Vallès 6
Changsha 6
Charlotte 6
Denver 6
Dong Ket 6
Düsseldorf 6
Guarulhos 6
Haiphong 6
Montreal 6
Porto Alegre 6
Pune 6
Rio de Janeiro 6
Stockholm 6
Turin 6
Ankara 5
Cork 5
Curitiba 5
Hyderabad 5
Mexico City 5
Palaiseau 5
Riyadh 5
Salt Lake City 5
Spilimbergo 5
Totale 4.206
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Nome #
Improved surface roughness modeling and mobility projections in thin film MOSFETs 234
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 213
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 211
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 200
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 191
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 186
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 185
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 185
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section 181
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 180
Advanced models for simulation of planar and gate-all-around nanoscale MOSFETs 170
The impact of interface states on the mobility and the drive current of III-V MOSFETs 169
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 166
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 164
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 164
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 164
Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme 162
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions 143
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 143
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 135
A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors 134
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs 134
Engineering of metal-MoS2 contacts to overcome Fermi level pinning 132
Sub-60mV/dec Swing and Drive Current in Dirac-Source FETs: a Design Study based on First-Principle Transport Simulations 126
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies 114
Compositional Phase Change of Early Transition Metal Diselenide (VSe2 and TiSe2) Ultrathin Films by Postgrowth Annealing 101
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off 91
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts 89
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator 88
Electron–phonon coupling in single-layer MoS2 88
80% Valley Polarization of Free Carriers in Singly Oriented Single-Layer WS2 on Au(111) 87
Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices : (Invited Paper) 84
Performance of III-V nanoscale MOSFETs: a simulation study 84
Anisotropic strain in epitaxial single-layer molybdenum disulfide on Ag(110) 84
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures 81
Epitaxial growth of single-orientation high-quality MoS2 monolayers 79
A Novel Ferroelectric MemCapacitor Enabling Multilevel Operation 78
CO adsorption, reduction and oxidation on Pb(Zr,Ti)O3(001) surfaces associated with negatively charged gold nanoparticles 78
Mixed Cation Halide Perovskite under Environmental and Physical Stress 77
Dual-Route Hydrogenation of the Graphene/Ni Interface 69
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon 66
Editorial: Selected papers from the 8th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2022) 65
Novel single-layer vanadium sulphide phases 64
Transition metal carbides (MXenes) for efficient NiO-based inverted perovskite solar cells 62
Growth Mechanism and Thermal Stability of a MoS2-Graphene Interface: A High-Resolution Core-Level Photoelectron Spectroscopy Study 61
Modelling and Design of Short Channel Ferroelectric FETs with a Metal Interlayer Easing the Multilevel Operation 61
Strong ferromagnetic coupling and tunable easy magnetization directions of FexCo1−x layer(s) intercalated under graphene 60
Momentum-resolved linear dichroism in bilayer MoS2 60
Growth and structure of singly oriented single-layer tungsten disulfide on Au(111) 59
Resistance hysteresis correlated with synchrotron radiation surface studies in atomic sp2 layers of carbon synthesized on ferroelectric (001) lead zirconate titanate in an ultrahigh vacuum 58
Interfacial two-dimensional oxide enhances photocatalytic activity of graphene/titania via electronic structure modification 58
The effect of structural disorder on the hydrogen loading into the graphene/nickel interface 57
Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation 57
Spin Structure of K Valleys in Single-Layer WS2 on Au(111) 55
Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors 53
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach 51
Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations 50
Photoemission investigation of oxygen intercalated epitaxial graphene on Ru(0001) 50
Interplay among Hydrogen Chemisorption, Intercalation, and Bulk Diffusion at the Graphene-Covered Ni(111) Crystal 48
Layer and orbital interference effects in photoemission from transition metal dichalcogenides 47
Ab-Initio Transport Study of Source-to-Channel Resistance in Metal-MoS2 Top Contacts Including Image Force Barrier Lowering in a Heterogeneous Dielectric Environment 45
Multi-level Operation of FeFETs Memristors: The Crucial Role of Three Dimensional Effects 44
Ion Implantation as an Approach for Structural Modifications and Functionalization of Ti3C2TxMXenes 44
An LGD model with extrinsic nucleations for polarization dynamics in ferroelectric materials and devices 43
Ultrafast electronic linewidth broadening in the C 1s core level of graphene 43
Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer 42
Operation and Design of Dirac-Source FETs Using Ab Initio Transport Simulations: Subthreshold Swing and Drive Current 12
Totale 6.859
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Categoria #
all - tutte 28.125
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 28.125
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202177 0 0 0 0 0 0 0 0 0 12 37 28
2021/2022399 22 24 25 32 3 15 16 28 6 47 116 65
2022/2023580 54 64 6 89 46 141 7 41 72 16 19 25
2023/2024253 33 15 11 15 23 32 12 23 21 32 7 29
2024/20251.260 28 71 39 39 39 73 156 129 113 87 221 265
2025/20262.235 185 282 205 165 431 228 372 83 170 114 0 0
Totale 6.859