Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs

This paper presents a new model for the surface roughness (SR) limited mobility (μSR). The model is suitable for bulk, for ultra thin body (UTB) and for Hetero-Structure Quantum Well (HS-QW) MOSFETs. Comparison with experimental mobility for Si bulk MOSFETs shows that a good agreement with measured mobility can be obtained with a r.m.s. value of the SR spectrum close to several AFM and TEM measurements. For III-V MOSFETs with small well thickness the proposed model shows a weaker mobility degradation with respect to the Tw6 behavior.