Performance of III-V nanoscale MOSFETs: a simulation study

Channel materials alternative to silicon have been recently introduced as a new scaling scenario to operate at increasingly lower supply voltages and maintain high performance. Silicon-based devices might reach their scaling limit imposed by the fundamental physical properties of silicon in the next few years making it difficult to achieve the expected performance for the future CMOS [6]. While for pMOS transistors promising results have been obtained by using the Ge as channel material [7], the best candidates for nMOS transistors are III-V semiconductors.