The technological exploitation of ferroelectricity in CMOS electron devices offers new design opportunities, but also significant challenges from an integration, optimization and modelling perspective. We here revisit the working principle and the modelling of some novel ferroelectric based devices, with an emphasis on energy efficiency and on applications to new computational paradigms.

Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies

Esseni D.;Fontanini R.;Lizzit D.;Massarotto M.;Driussi F.;Loghi M.
2021-01-01

Abstract

The technological exploitation of ferroelectricity in CMOS electron devices offers new design opportunities, but also significant challenges from an integration, optimization and modelling perspective. We here revisit the working principle and the modelling of some novel ferroelectric based devices, with an emphasis on energy efficiency and on applications to new computational paradigms.
2021
978-1-7281-8176-9
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/1206804
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