| Nome |
# |
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DFT study of graphene doping due to metal contacts, file e27ce0c7-3dca-055e-e053-6605fe0a7873
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308
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An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation, file e27ce0c7-4770-055e-e053-6605fe0a7873
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221
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A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions, file e27ce0c7-43da-055e-e053-6605fe0a7873
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217
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Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation, file e27ce0c7-476c-055e-e053-6605fe0a7873
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214
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Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions, file e27ce0c7-476a-055e-e053-6605fe0a7873
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189
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Engineering of metal-MoS2 contacts to overcome Fermi level pinning, file e27ce0ca-1fca-055e-e053-6605fe0a7873
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156
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Electrical Compact Modeling of Graphene Base Transistors, file e27ce0c2-53bb-055e-e053-6605fe0a7873
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108
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On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance, file e27ce0c7-892c-055e-e053-6605fe0a7873
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92
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Investigation of the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation, file e27ce0c7-43d8-055e-e053-6605fe0a7873
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72
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Dependability Assessment of Transfer Length Method to Extract the Metal–Graphene Contact Resistance, file e27ce0c8-c8d5-055e-e053-6605fe0a7873
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62
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Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization, file e27ce0c7-881d-055e-e053-6605fe0a7873
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57
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Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures, file 861f71f1-538a-4ebe-8d67-21d35dcbfec5
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53
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Simulation study of Fermi level depinning in metal-MoS2 contacts, file e27ce0c9-fffd-055e-e053-6605fe0a7873
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52
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Improved understanding of metal–graphene contacts, file e27ce0c7-a0b8-055e-e053-6605fe0a7873
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51
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Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating, file e27ce0c7-8462-055e-e053-6605fe0a7873
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47
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Modelling and design of FTJs as multi-level low energy memristors for neuromorphic computing, file e27ce0ca-231b-055e-e053-6605fe0a7873
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44
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Going ballistic: Graphene hot electron transistors, file e27ce0c7-892e-055e-e053-6605fe0a7873
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43
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Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs, file e27ce0c9-ab1e-055e-e053-6605fe0a7873
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42
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Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off, file 95ea89c1-f9b8-4c1f-b091-89208f7bd878
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36
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Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection, file 38fab7b4-6378-4854-8834-9f639e0edb72
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33
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Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes, file e27ce0c9-0bea-055e-e053-6605fe0a7873
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27
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Backscattering and common-base current gain of the Graphene Base Transistor (GBT), file e27ce0c9-7d83-055e-e053-6605fe0a7873
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23
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Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies, file e27ce0ca-1ac2-055e-e053-6605fe0a7873
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23
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Dependable Contact Related Parameter Extraction in Graphene–Metal Junctions, file e27ce0c9-0ea1-055e-e053-6605fe0a7873
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21
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Versatile experimental setup for FTJ characterization, file fe298a81-a2e9-4244-be08-9d8b974e6b95
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18
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Modelling and design of FTJs as high reading-impedance synaptic devices, file e27ce0ca-1e9e-055e-e053-6605fe0a7873
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15
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Interplay between charge trapping and polarization switching in BEOL-compatible bilayer Ferroelectric Tunnel Junctions, file ef9053c6-5494-4aa0-ae65-15741f7be2ae
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15
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Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions, file 3c9fe524-f4f9-4893-9276-18e2d082ef58
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14
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Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects, file e27ce0c5-06f3-055e-e053-6605fe0a7873
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13
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Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions, file 8313ba19-a940-419c-a6b8-50d4118ccbd3
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12
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Backscattering and common-base current gain of the Graphene Base Transistor (GBT), file e27ce0c2-29c9-055e-e053-6605fe0a7873
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12
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New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits, file e27ce0c5-4332-055e-e053-6605fe0a7873
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12
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Synchrotron Radiation Study of Gain, Noise, and Collection Efficiency of GaAs SAM-APDs with Staircase Structure, file e27ce0ca-30a3-055e-e053-6605fe0a7873
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12
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Versatile experimental setup for FTJ characterization, file 6f1cc34b-6dcc-4bdb-a68f-fae8d4b72f54
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7
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A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator, file 8800e456-7675-4330-9b1b-3ce1bf6b5f77
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7
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Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating, file e27ce0c5-7d72-055e-e053-6605fe0a7873
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7
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Experimental Characterization of Separate Absorption–Multiplication GaAs Staircase Avalanche Photodiodes under Continuous Laser Light Reveals Periodic Oscillations at High Gains, file 6084cda4-5a59-4a7f-a874-0907137c8496
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6
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Modelling, simulation and design of the vertical Graphene Base Transistor, file e27ce0c1-f095-055e-e053-6605fe0a7873
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5
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Effects of electrical stress and ionizing radiation on Si-based TFETs, file e27ce0c1-fa8f-055e-e053-6605fe0a7873
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5
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Backscattering and common-base current gain of the Graphene Base Transistor (GBT), file e27ce0c2-09ab-055e-e053-6605fe0a7873
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5
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Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs, file e27ce0c2-29cb-055e-e053-6605fe0a7873
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5
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Optimizing the Number of Steps and the Noise in Staircase APDs with Ternary III - V Semiconductor Alloys, file e27ce0c7-718b-055e-e053-6605fe0a7873
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5
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Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions, file e27ce0ca-16a6-055e-e053-6605fe0a7873
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5
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null, file eedbf8f9-b814-4a69-9846-a49dc779bbbf
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5
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Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures, file f0971387-fa0f-48b1-8f91-dc609bb32fc1
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5
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Versatile experimental setup for FTJ characterization, file 8bd1ed50-9c64-4af9-87db-b8b3e5d31c57
|
4
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Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions, file 9165c003-37a7-45fd-a48e-64177fa80d34
|
4
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Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions, file d96dc4c8-fd99-45c4-a2c7-b8906b8190e4
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4
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Improved understanding of metal–graphene contacts, file e27ce0c6-4bcc-055e-e053-6605fe0a7873
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4
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|
Engineering of metal-MoS2 contacts to overcome Fermi level pinning, file e27ce0ca-1fc9-055e-e053-6605fe0a7873
|
4
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|
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions, file 08523866-1bcf-44d6-a507-ab157f9bc4f0
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3
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Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation, file 0c1b9b43-deda-47d7-a111-1de8184251ce
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3
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|
Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions, file 116680b6-f870-4078-b0d5-7538286fe93d
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3
|
|
Study of gain, noise, and collection efficiency of GaAs SAM-APDs single pixel, file 4435a2d2-0310-4d53-84de-e3578430892b
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3
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|
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions, file 77ef5481-7630-4d5a-afe2-caaef07e1e92
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3
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|
Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions, file e1a56e25-75d9-4a6f-91b8-3d866e667931
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3
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A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap, file e27ce0c1-dfa9-055e-e053-6605fe0a7873
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3
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|
Going ballistic: Graphene hot electron transistors, file e27ce0c2-5a32-055e-e053-6605fe0a7873
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3
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On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance, file e27ce0c5-7e93-055e-e053-6605fe0a7873
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3
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Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory, file e27ce0c5-d84b-055e-e053-6605fe0a7873
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3
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Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection, file e27ce0c7-59d8-055e-e053-6605fe0a7873
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3
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Full-Band Monte Carlo simulations of GaAs p-i-n Avalanche PhotoDiodes: What Are the Limits of Nonlocal Impact Ionization Models?, file e27ce0c8-ef10-055e-e053-6605fe0a7873
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3
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Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon, file e27ce0c9-f183-055e-e053-6605fe0a7873
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3
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Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies, file e27ce0c9-ffff-055e-e053-6605fe0a7873
|
3
|
|
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions, file 4dfc66f3-c6b2-4e82-b47a-64f166ef5442
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2
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|
Interplay between charge trapping and polarization switching in BEOL-compatible bilayer Ferroelectric Tunnel Junctions, file 64eb10f2-f77e-44a3-8af8-b7826f7b627e
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2
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Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions, file 8d5e4371-97b9-48de-a602-74432bf25d7c
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2
|
|
Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions, file 8d893882-f429-4fb6-bf32-5c96478d1e09
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2
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|
Simulation of DC and RF Performance of the Graphene Base Transistor, file e27ce0c1-f230-055e-e053-6605fe0a7873
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2
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|
Modeling electrostatic doping and series resistance in graphene-FETs, file e27ce0c2-f62d-055e-e053-6605fe0a7873
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2
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Simulation Study of the Graphene Base Transistor, file e27ce0c3-cb6a-055e-e053-6605fe0a7873
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2
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Detailed characterization and critical discussion of series resistance in graphene-metal contacts, file e27ce0c3-d728-055e-e053-6605fe0a7873
|
2
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|
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions, file e27ce0c7-5768-055e-e053-6605fe0a7873
|
2
|
|
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation, file e27ce0c7-9077-055e-e053-6605fe0a7873
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2
|
|
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions, file e27ce0c7-922b-055e-e053-6605fe0a7873
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2
|
|
Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions, file 2c2da6e5-b730-4bae-9a97-6d068a8083d6
|
1
|
|
Editorial: Selected papers from the 8th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2022), file 428e50db-d7ae-4db0-8c7c-e1bd9c7234a1
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1
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|
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts, file 42b73833-b48c-4d24-9b88-8cfca6a4c6ac
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1
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|
Versatile experimental setup for FTJ characterization, file cde47d92-53f9-46f4-84c4-0f8efa4d6fd8
|
1
|
|
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off, file d1844737-a71e-47cd-a37a-bda8cf465007
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1
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Total Ionizing Dose Effects in Si-Based Tunnel FETs, file e27ce0c1-c823-055e-e053-6605fe0a7873
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1
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|
Modeling, simulation and design of the vertical Graphene Base Transistor, file e27ce0c1-e216-055e-e053-6605fe0a7873
|
1
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|
Experimental procedure for accurate trap density study by low frequency charge pumping measurements, file e27ce0c1-ee71-055e-e053-6605fe0a7873
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1
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Simulations and Electrical Characterization of Double-side Double Type Column 3D Detectors, file e27ce0c1-f07a-055e-e053-6605fe0a7873
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1
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|
Graphene Base Transistors with optimized emitter and dielectrics, file e27ce0c1-f225-055e-e053-6605fe0a7873
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1
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Trade-off between Electron Velocity and Density of States in Ballistic nano-MOSFETs, file e27ce0c1-f54e-055e-e053-6605fe0a7873
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1
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State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors, file e27ce0c2-2013-055e-e053-6605fe0a7873
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1
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Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs, file e27ce0c2-61ae-055e-e053-6605fe0a7873
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1
|
|
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines, file e27ce0c3-5d91-055e-e053-6605fe0a7873
|
1
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|
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method, file e27ce0c5-2bfc-055e-e053-6605fe0a7873
|
1
|
|
Hot Hole Gate Current in Surface Channel p-MOSFETs, file e27ce0c5-a8ce-055e-e053-6605fe0a7873
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1
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|
Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime, file e27ce0c5-a8d0-055e-e053-6605fe0a7873
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1
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|
Experimental Evidence and Statistical Modeling of Cooperating Defects in Stressed Oxides, file e27ce0c5-fa85-055e-e053-6605fe0a7873
|
1
|
|
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes, file e27ce0c7-476e-055e-e053-6605fe0a7873
|
1
|
|
Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization, file e27ce0c7-5e0f-055e-e053-6605fe0a7873
|
1
|
|
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation, file e27ce0c7-749d-055e-e053-6605fe0a7873
|
1
|
|
Dependability Assessment of Transfer Length Method to Extract the Metal–Graphene Contact Resistance, file e27ce0c8-c49e-055e-e053-6605fe0a7873
|
1
|
|
Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes, file e27ce0c9-1710-055e-e053-6605fe0a7873
|
1
|
|
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions, file e27ce0c9-1965-055e-e053-6605fe0a7873
|
1
|
|
Modelling and design of FTJs as high reading-impedance synaptic devices, file e27ce0ca-18a3-055e-e053-6605fe0a7873
|
1
|
| Totale |
2.490 |