IRIS
DRIUSSI, Francesco
 Distribuzione geografica
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Continente #
NA - Nord America 9.630
AS - Asia 3.505
EU - Europa 2.600
SA - Sud America 514
Continente sconosciuto - Info sul continente non disponibili 479
AF - Africa 73
OC - Oceania 2
Totale 16.803
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Nazione #
US - Stati Uniti d'America 9.461
SG - Singapore 1.700
CN - Cina 724
IT - Italia 594
UA - Ucraina 457
DE - Germania 408
BR - Brasile 387
HK - Hong Kong 377
VN - Vietnam 232
RU - Federazione Russa 214
FR - Francia 194
FI - Finlandia 190
IE - Irlanda 115
SE - Svezia 102
TR - Turchia 97
GB - Regno Unito 93
CA - Canada 88
IN - India 78
BD - Bangladesh 54
NL - Olanda 40
AR - Argentina 39
AT - Austria 39
MX - Messico 38
KR - Corea 37
ES - Italia 35
PL - Polonia 33
IQ - Iraq 30
JP - Giappone 27
EC - Ecuador 26
PK - Pakistan 22
ZA - Sudafrica 22
CO - Colombia 21
BE - Belgio 20
VE - Venezuela 19
ID - Indonesia 16
SA - Arabia Saudita 15
PH - Filippine 14
TW - Taiwan 14
MA - Marocco 10
TG - Togo 10
CR - Costa Rica 8
JO - Giordania 8
LT - Lituania 8
TN - Tunisia 8
UZ - Uzbekistan 8
JM - Giamaica 7
PY - Paraguay 7
AZ - Azerbaigian 6
CH - Svizzera 6
RO - Romania 6
AE - Emirati Arabi Uniti 5
GR - Grecia 5
KE - Kenya 5
PA - Panama 5
UY - Uruguay 5
AM - Armenia 4
CZ - Repubblica Ceca 4
DK - Danimarca 4
HU - Ungheria 4
KZ - Kazakistan 4
LV - Lettonia 4
MY - Malesia 4
PE - Perù 4
PR - Porto Rico 4
SK - Slovacchia (Repubblica Slovacca) 4
AL - Albania 3
BG - Bulgaria 3
ET - Etiopia 3
GT - Guatemala 3
HN - Honduras 3
HR - Croazia 3
IL - Israele 3
KG - Kirghizistan 3
LA - Repubblica Popolare Democratica del Laos 3
LK - Sri Lanka 3
SV - El Salvador 3
AO - Angola 2
BH - Bahrain 2
BO - Bolivia 2
CL - Cile 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
EG - Egitto 2
GE - Georgia 2
IR - Iran 2
LC - Santa Lucia 2
MD - Moldavia 2
NI - Nicaragua 2
PT - Portogallo 2
QA - Qatar 2
RS - Serbia 2
TH - Thailandia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BF - Burkina Faso 1
BS - Bahamas 1
BW - Botswana 1
BZ - Belize 1
Totale 16.302
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Città #
Fairfield 1.002
Ashburn 874
Woodbridge 869
Singapore 787
Houston 555
Chandler 516
Ann Arbor 508
San Jose 463
Wilmington 398
Seattle 380
Hong Kong 371
Beijing 370
Cambridge 341
Jacksonville 295
Udine 183
Council Bluffs 177
Dearborn 177
Boardman 175
Los Angeles 126
Dublin 112
Lauterbourg 106
Princeton 103
Santa Clara 96
Buffalo 91
Dallas 77
Izmir 69
Ho Chi Minh City 67
New York 67
Hefei 49
The Dalles 48
Milan 47
San Diego 47
Hanoi 46
São Paulo 43
East Aurora 42
Redondo Beach 42
Orem 40
Denver 39
Frankfurt am Main 35
Düsseldorf 33
Helsinki 33
Seoul 32
Munich 29
Ogden 29
Warsaw 29
Des Moines 28
Chicago 26
Nuremberg 26
Palaiseau 25
Phoenix 25
Montreal 23
Vienna 23
Amsterdam 22
Atlanta 22
Tokyo 22
Ottawa 21
Brooklyn 20
Brussels 20
Rome 17
Stockholm 17
Boston 16
Dong Ket 16
Norwalk 16
Haiphong 15
London 15
Mexico City 15
Chennai 14
Kunming 14
Lappeenranta 14
Mumbai 14
Trieste 14
Bologna 13
Johannesburg 13
Miano 13
Poplar 13
Nanjing 12
Rio de Janeiro 12
Guayaquil 11
San Francisco 11
Taipei 11
Toronto 11
Verona 11
Baghdad 10
Buenos Aires 10
Charlotte 10
Grenoble 10
Newark 10
Ankara 9
Codroipo 9
Grafing 9
Guangzhou 9
Jinan 9
Lomé 9
Manchester 9
Miami 9
New Delhi 9
Quito 9
Redmond 9
Shanghai 9
Simi Valley 9
Totale 10.816
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Nome #
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 232
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 224
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 222
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 218
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 218
Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories 207
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 203
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 199
DFT study of graphene doping due to metal contacts 195
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 191
Total Ionizing Dose Effects in Si-Based Tunnel FETs 189
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 188
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 184
Improved understanding of metal–graphene contacts 184
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors 183
Going ballistic: Graphene hot electron transistors 177
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 175
Simulation of DC and RF Performance of the Graphene Base Transistor 174
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 173
Electrical Compact Modeling of Graphene Base Transistors 173
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 173
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 173
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 172
Characterization and Modeling of long term retention in SONOS Non Volatile Memories 168
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 166
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 165
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap 163
Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications 163
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 163
Impact of Device Layout and Annealing Process During the Passivation of Interface States in Presence of Silicon Nitride Layers 160
Investigation of the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 160
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions 159
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines 158
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 157
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 156
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 156
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 155
Trade-off between Electron Velocity and Density of States in Ballistic nano-MOSFETs 151
Hot Hole Gate Current in Surface Channel p-MOSFETs 150
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 148
Engineering of metal-MoS2 contacts to overcome Fermi level pinning 147
Long term charge retention dynamics of SONOS cells 144
Experimental procedure for accurate trap density study by low frequency charge pumping measurements 144
Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory 142
Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories 141
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part II: Experimental Results on Flash Memory Arrays 141
Graphene Base Transistors with optimized emitter and dielectrics 141
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs 141
Fabrication, Characterization and Modeling of Strained SOI MOSFETs with Very Large Effective Mobility 140
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions 140
Substrate enhanced degradation of cmos devices 138
Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization 137
On the Passivation of Interface States in SONOS Test Structures: Impact of Device Layout and Annealing Process 136
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 136
Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime 136
Impact of the Charge Transport in the Conduction Band on the Retention of Si-Nitride Based Memories 136
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 136
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 134
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy 132
Revised analysis of Coulomb scattering limited mobility in biaxially strained silicon MOSFETs 132
Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions 131
Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs 130
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs - Part II: Atomistic and Electrical Modeling 130
Modeling, simulation and design of the vertical Graphene Base Transistor 130
Mobility Extraction of UTB n-MOSFETs down to 0.9 nm SOI thickness 127
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies 126
Modelling and design of FTJs as high reading-impedance synaptic devices 126
Comparison of modeling approaches for the capacitance-voltage and current voltage characteristics of advanced gate stacks 125
Observation of a new hole gate current component in p+-poly gate p-channel mosfet's 125
Does Multi Trap Assisted Tunneling Explain the Oxide Thickness Dependence of the Statistics of SILC in FLASH Memory Arrays ? 125
Effects of electrical stress and ionizing radiation on Si-based TFETs 123
Substrate Enhanced Gate Currents in CMOS Devices 122
Programme and retention characteristics of SONOS memory arrays with layered tunnel barrier 122
Modeling electrostatic doping and series resistance in graphene-FETs 122
Versatile experimental setup for FTJ characterization 121
Nitride Layer Influence on the Hydrogen Anneal of Interface Dangling Bonds 120
On the electron mobility enhancement in biaxially strained Si MOSFETs 120
Simulation study of Fermi level depinning in metal-MoS2 contacts 120
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics 118
Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection 117
Hot carrier degradation and damage profiling of cmos devices with biased substrates 116
Performance, degradation monitors, and reliability of the CHISEL injection regime 115
Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation 114
Program efficiency and high temperature retention of SiN/high-K based memories 114
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off 113
Modelling and design of FTJs as multi-level low energy memristors for neuromorphic computing 113
Optimizing the Number of Steps and the Noise in Staircase APDs with Ternary III - V Semiconductor Alloys 112
A simulation study of the Punch-through Assisted Hot Holes Injection mechanism for non-volatile-memory cells 110
On the electrical monitor for device degradation in the CHISEL stress regime 109
Mobility extraction in SOI MOSFETs with sub 1 nm body thickness 108
Simulations and Electrical Characterization of Double-side Double Type Column 3D Detectors 107
Simulation Study of Coulomb Mobility in Strained Silicon 105
Investigation of the Energy Distribution of Stress-Induced Oxide Traps by Numerical Analysis of the TAT of HEs 105
Simulation Study of the Trapping Properties of HfO2-Based Charge-Trap Memory Cells 105
Dependability Assessment of Transfer Length Method to Extract the Metal–Graphene Contact Resistance 105
Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes 104
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 101
Analysis and Compensation of the Series Resistance Effects on the Characteristics of Ferroelectric Capacitors 99
Gate Current in Stacked Dielectrics for Advanced FLASH EEPROM cells 98
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures 97
Totale 14.529
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Categoria #
all - tutte 65.027
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 65.027
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022771 0 0 37 54 6 44 63 31 11 151 240 134
2022/20231.187 120 133 14 173 83 284 10 89 143 24 47 67
2023/2024474 54 30 42 7 55 34 23 37 45 31 24 92
2024/20252.212 48 175 236 44 69 129 189 106 244 150 356 466
2025/20264.806 334 538 302 466 899 385 700 111 346 357 219 149
2026/2027658 110 347 201 0 0 0 0 0 0 0 0 0
Totale 16.803