IRIS
DRIUSSI, Francesco
 Distribuzione geografica
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Continente #
NA - Nord America 9.093
AS - Asia 3.452
EU - Europa 2.486
SA - Sud America 491
AF - Africa 72
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
Totale 15.598
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Nazione #
US - Stati Uniti d'America 8.952
SG - Singapore 1.688
CN - Cina 712
IT - Italia 507
UA - Ucraina 456
DE - Germania 398
BR - Brasile 377
HK - Hong Kong 373
VN - Vietnam 227
RU - Federazione Russa 213
FR - Francia 194
FI - Finlandia 189
IE - Irlanda 115
SE - Svezia 102
TR - Turchia 97
GB - Regno Unito 88
CA - Canada 77
IN - India 77
BD - Bangladesh 47
AT - Austria 39
AR - Argentina 38
NL - Olanda 38
KR - Corea 36
MX - Messico 36
ES - Italia 32
PL - Polonia 32
IQ - Iraq 30
JP - Giappone 26
EC - Ecuador 24
ZA - Sudafrica 22
PK - Pakistan 21
BE - Belgio 20
CO - Colombia 17
VE - Venezuela 16
ID - Indonesia 15
PH - Filippine 13
SA - Arabia Saudita 12
TW - Taiwan 12
MA - Marocco 10
TG - Togo 10
JO - Giordania 8
LT - Lituania 8
TN - Tunisia 8
UZ - Uzbekistan 8
PY - Paraguay 7
AZ - Azerbaigian 6
CH - Svizzera 6
CR - Costa Rica 6
RO - Romania 6
AE - Emirati Arabi Uniti 5
GR - Grecia 5
KE - Kenya 5
PA - Panama 5
AM - Armenia 4
CZ - Repubblica Ceca 4
DK - Danimarca 4
LV - Lettonia 4
UY - Uruguay 4
BG - Bulgaria 3
ET - Etiopia 3
GT - Guatemala 3
HR - Croazia 3
HU - Ungheria 3
IL - Israele 3
KG - Kirghizistan 3
KZ - Kazakistan 3
LA - Repubblica Popolare Democratica del Laos 3
LK - Sri Lanka 3
MY - Malesia 3
PE - Perù 3
SK - Slovacchia (Repubblica Slovacca) 3
AL - Albania 2
AO - Angola 2
BH - Bahrain 2
BO - Bolivia 2
CL - Cile 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
EG - Egitto 2
GE - Georgia 2
IR - Iran 2
JM - Giamaica 2
LC - Santa Lucia 2
MD - Moldavia 2
NI - Nicaragua 2
PT - Portogallo 2
QA - Qatar 2
RS - Serbia 2
SV - El Salvador 2
TH - Thailandia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BW - Botswana 1
BZ - Belize 1
CI - Costa d'Avorio 1
EU - Europa 1
GA - Gabon 1
GM - Gambi 1
HN - Honduras 1
Totale 15.578
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Città #
Fairfield 1.002
Woodbridge 868
Singapore 780
Ashburn 761
Houston 550
Chandler 516
Ann Arbor 507
San Jose 431
Wilmington 396
Seattle 378
Hong Kong 367
Beijing 363
Cambridge 341
Jacksonville 293
Udine 189
Dearborn 177
Boardman 175
Council Bluffs 123
Los Angeles 117
Dublin 112
Lauterbourg 106
Princeton 102
Buffalo 91
Dallas 72
Izmir 69
Santa Clara 68
Ho Chi Minh City 65
New York 65
Hefei 49
The Dalles 48
San Diego 47
Hanoi 45
São Paulo 43
Redondo Beach 42
East Aurora 41
Orem 40
Denver 36
Frankfurt am Main 35
Helsinki 32
Seoul 32
Düsseldorf 29
Munich 29
Ogden 29
Warsaw 29
Des Moines 27
Nuremberg 26
Palaiseau 25
Vienna 23
Amsterdam 22
Tokyo 22
Atlanta 21
Ottawa 21
Brussels 20
Chicago 20
Montreal 20
Brooklyn 18
Milan 18
Stockholm 17
Boston 16
Dong Ket 16
Norwalk 16
Haiphong 15
London 15
Phoenix 15
Chennai 14
Kunming 14
Lappeenranta 14
Mexico City 14
Mumbai 14
Bologna 13
Johannesburg 13
Poplar 13
Rome 13
Nanjing 12
Rio de Janeiro 12
Trieste 12
Taipei 11
Verona 11
Baghdad 10
Buenos Aires 10
Grenoble 10
Toronto 10
Ankara 9
Codroipo 9
Grafing 9
Guangzhou 9
Guayaquil 9
Jinan 9
Lomé 9
Manchester 9
New Delhi 9
Quito 9
Redmond 9
San Francisco 9
Charlotte 8
Shanghai 8
Simi Valley 8
Tashkent 8
Augusta 7
Belo Horizonte 7
Totale 10.457
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Nome #
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 224
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 218
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 218
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 214
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 212
Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories 200
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 195
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 192
DFT study of graphene doping due to metal contacts 188
Total Ionizing Dose Effects in Si-Based Tunnel FETs 186
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 185
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 181
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 179
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors 178
Improved understanding of metal–graphene contacts 173
Going ballistic: Graphene hot electron transistors 173
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 170
Simulation of DC and RF Performance of the Graphene Base Transistor 169
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 169
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 168
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 166
Electrical Compact Modeling of Graphene Base Transistors 166
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 166
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 161
Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications 160
Characterization and Modeling of long term retention in SONOS Non Volatile Memories 160
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap 158
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 158
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 157
Investigation of the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 156
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 154
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 153
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines 153
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 152
Impact of Device Layout and Annealing Process During the Passivation of Interface States in Presence of Silicon Nitride Layers 152
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 150
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions 148
Hot Hole Gate Current in Surface Channel p-MOSFETs 148
Trade-off between Electron Velocity and Density of States in Ballistic nano-MOSFETs 145
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 144
Experimental procedure for accurate trap density study by low frequency charge pumping measurements 141
Long term charge retention dynamics of SONOS cells 138
Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories 137
Graphene Base Transistors with optimized emitter and dielectrics 137
Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory 137
Engineering of metal-MoS2 contacts to overcome Fermi level pinning 136
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs 135
On the Passivation of Interface States in SONOS Test Structures: Impact of Device Layout and Annealing Process 134
Fabrication, Characterization and Modeling of Strained SOI MOSFETs with Very Large Effective Mobility 134
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part II: Experimental Results on Flash Memory Arrays 134
Substrate enhanced degradation of cmos devices 133
Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime 132
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 132
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 131
Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization 130
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions 130
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy 129
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 128
Modeling, simulation and design of the vertical Graphene Base Transistor 128
Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions 127
Impact of the Charge Transport in the Conduction Band on the Retention of Si-Nitride Based Memories 127
Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs 125
Revised analysis of Coulomb scattering limited mobility in biaxially strained silicon MOSFETs 125
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs - Part II: Atomistic and Electrical Modeling 124
Does Multi Trap Assisted Tunneling Explain the Oxide Thickness Dependence of the Statistics of SILC in FLASH Memory Arrays ? 121
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies 121
Mobility Extraction of UTB n-MOSFETs down to 0.9 nm SOI thickness 120
Comparison of modeling approaches for the capacitance-voltage and current voltage characteristics of advanced gate stacks 119
Programme and retention characteristics of SONOS memory arrays with layered tunnel barrier 118
Effects of electrical stress and ionizing radiation on Si-based TFETs 117
Modelling and design of FTJs as high reading-impedance synaptic devices 117
Modeling electrostatic doping and series resistance in graphene-FETs 116
Versatile experimental setup for FTJ characterization 115
Substrate Enhanced Gate Currents in CMOS Devices 115
On the electron mobility enhancement in biaxially strained Si MOSFETs 114
Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection 114
Simulation study of Fermi level depinning in metal-MoS2 contacts 114
Nitride Layer Influence on the Hydrogen Anneal of Interface Dangling Bonds 113
Observation of a new hole gate current component in p+-poly gate p-channel mosfet's 113
Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation 111
Performance, degradation monitors, and reliability of the CHISEL injection regime 111
Hot carrier degradation and damage profiling of cmos devices with biased substrates 111
Program efficiency and high temperature retention of SiN/high-K based memories 110
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics 110
Optimizing the Number of Steps and the Noise in Staircase APDs with Ternary III - V Semiconductor Alloys 109
On the electrical monitor for device degradation in the CHISEL stress regime 107
Modelling and design of FTJs as multi-level low energy memristors for neuromorphic computing 106
A simulation study of the Punch-through Assisted Hot Holes Injection mechanism for non-volatile-memory cells 104
Mobility extraction in SOI MOSFETs with sub 1 nm body thickness 102
Simulations and Electrical Characterization of Double-side Double Type Column 3D Detectors 101
Simulation Study of Coulomb Mobility in Strained Silicon 100
Investigation of the Energy Distribution of Stress-Induced Oxide Traps by Numerical Analysis of the TAT of HEs 100
Dependability Assessment of Transfer Length Method to Extract the Metal–Graphene Contact Resistance 100
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 99
Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes 99
Simulation Study of the Trapping Properties of HfO2-Based Charge-Trap Memory Cells 97
Analysis and Compensation of the Series Resistance Effects on the Characteristics of Ferroelectric Capacitors 96
Gate Current in Stacked Dielectrics for Advanced FLASH EEPROM cells 93
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off 92
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures 91
Totale 13.959
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Categoria #
all - tutte 60.433
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 60.433
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202190 0 0 0 0 0 0 0 0 0 0 0 90
2021/2022885 48 66 37 54 6 44 63 31 11 151 240 134
2022/20231.187 120 133 14 173 83 284 10 89 143 24 47 67
2023/2024474 54 30 42 7 55 34 23 37 45 31 24 92
2024/20252.212 48 175 236 44 69 129 189 106 244 150 356 466
2025/20264.734 334 538 302 466 899 385 700 111 346 357 219 77
Totale 16.073