IRIS
DRIUSSI, Francesco
 Distribuzione geografica
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Continente #
NA - Nord America 8.038
AS - Asia 2.797
EU - Europa 2.227
SA - Sud America 389
AF - Africa 47
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
Totale 13.502
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Nazione #
US - Stati Uniti d'America 7.931
SG - Singapore 1.395
CN - Cina 637
IT - Italia 456
UA - Ucraina 455
DE - Germania 374
HK - Hong Kong 339
BR - Brasile 325
RU - Federazione Russa 209
FI - Finlandia 177
VN - Vietnam 142
IE - Irlanda 110
SE - Svezia 100
TR - Turchia 85
GB - Regno Unito 78
FR - Francia 77
CA - Canada 61
IN - India 44
KR - Corea 35
AT - Austria 33
NL - Olanda 31
PL - Polonia 30
MX - Messico 26
AR - Argentina 22
BD - Bangladesh 21
JP - Giappone 21
BE - Belgio 20
ES - Italia 20
EC - Ecuador 15
ZA - Sudafrica 15
IQ - Iraq 10
VE - Venezuela 10
ID - Indonesia 9
TG - Togo 9
TW - Taiwan 9
LT - Lituania 7
CH - Svizzera 6
MA - Marocco 6
RO - Romania 6
CO - Colombia 5
GR - Grecia 5
PA - Panama 5
PK - Pakistan 5
PY - Paraguay 5
TN - Tunisia 5
AE - Emirati Arabi Uniti 4
AZ - Azerbaigian 4
CR - Costa Rica 4
CZ - Repubblica Ceca 4
DK - Danimarca 4
KE - Kenya 4
LV - Lettonia 4
SA - Arabia Saudita 4
UZ - Uzbekistan 4
BG - Bulgaria 3
HR - Croazia 3
HU - Ungheria 3
KG - Kirghizistan 3
KZ - Kazakistan 3
LK - Sri Lanka 3
PH - Filippine 3
SK - Slovacchia (Repubblica Slovacca) 3
UY - Uruguay 3
AM - Armenia 2
GE - Georgia 2
GT - Guatemala 2
IL - Israele 2
IR - Iran 2
JM - Giamaica 2
LA - Repubblica Popolare Democratica del Laos 2
LC - Santa Lucia 2
PE - Perù 2
PT - Portogallo 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AO - Angola 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BH - Bahrain 1
BW - Botswana 1
BZ - Belize 1
CI - Costa d'Avorio 1
CL - Cile 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
EG - Egitto 1
ET - Etiopia 1
EU - Europa 1
GM - Gambi 1
HN - Honduras 1
IS - Islanda 1
JO - Giordania 1
LU - Lussemburgo 1
MD - Moldavia 1
MK - Macedonia 1
MN - Mongolia 1
NO - Norvegia 1
NP - Nepal 1
NZ - Nuova Zelanda 1
PR - Porto Rico 1
PS - Palestinian Territory 1
Totale 13.496
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Città #
Fairfield 1.002
Woodbridge 868
Ashburn 650
Singapore 625
Houston 549
Chandler 516
Ann Arbor 507
Wilmington 394
Seattle 378
Beijing 349
Cambridge 341
Hong Kong 337
Jacksonville 293
Dearborn 177
Udine 169
Boardman 157
Dublin 108
Princeton 102
Los Angeles 98
Buffalo 87
Izmir 69
Dallas 66
New York 54
Hefei 49
San Diego 47
Ho Chi Minh City 45
Santa Clara 44
Redondo Beach 42
East Aurora 41
São Paulo 38
Seoul 32
Denver 30
Düsseldorf 29
Munich 29
Ogden 29
Warsaw 27
Des Moines 25
Palaiseau 25
Hanoi 23
Nuremberg 22
Helsinki 21
Ottawa 21
Brussels 20
Vienna 20
Tokyo 19
Frankfurt am Main 18
Amsterdam 16
Brooklyn 16
Dong Ket 16
Milan 16
Montreal 16
Norwalk 16
Boston 15
Stockholm 15
Atlanta 14
Chicago 14
Kunming 14
Orem 14
The Dalles 14
Bologna 13
Lappeenranta 13
Phoenix 13
Rome 13
Nanjing 12
Poplar 12
Trieste 12
London 11
Mexico City 11
Rio de Janeiro 11
Mumbai 10
Toronto 10
Chennai 9
Codroipo 9
Grafing 9
Jinan 9
Johannesburg 9
Redmond 9
San Francisco 9
Taipei 9
Verona 9
Ankara 8
Buenos Aires 8
Guangzhou 8
Haiphong 8
Lomé 8
Manchester 8
Simi Valley 8
Brasília 7
Martignacco 7
San Michele al Tagliamento 7
Belo Horizonte 6
Modena 6
Moscow 6
Paris 6
Portsmouth 6
Quito 6
Scafati 6
Shanghai 6
Augusta 5
Campinas 5
Totale 9.145
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Nome #
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 202
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 202
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 196
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 196
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 191
Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories 187
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 179
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 177
Total Ionizing Dose Effects in Si-Based Tunnel FETs 168
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 167
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 165
DFT study of graphene doping due to metal contacts 165
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 164
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 158
Going ballistic: Graphene hot electron transistors 158
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors 156
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 153
Improved understanding of metal–graphene contacts 153
Simulation of DC and RF Performance of the Graphene Base Transistor 152
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 149
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 148
Electrical Compact Modeling of Graphene Base Transistors 148
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 148
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap 147
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 147
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 146
Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications 145
Characterization and Modeling of long term retention in SONOS Non Volatile Memories 145
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 145
Hot Hole Gate Current in Surface Channel p-MOSFETs 139
Impact of Device Layout and Annealing Process During the Passivation of Interface States in Presence of Silicon Nitride Layers 139
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 139
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 137
Investigation of the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 137
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 137
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines 136
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 135
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 134
Trade-off between Electron Velocity and Density of States in Ballistic nano-MOSFETs 129
Long term charge retention dynamics of SONOS cells 127
On the Passivation of Interface States in SONOS Test Structures: Impact of Device Layout and Annealing Process 126
Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory 126
Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories 125
Experimental procedure for accurate trap density study by low frequency charge pumping measurements 123
Substrate enhanced degradation of cmos devices 122
Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime 122
Fabrication, Characterization and Modeling of Strained SOI MOSFETs with Very Large Effective Mobility 122
Graphene Base Transistors with optimized emitter and dielectrics 121
Revised analysis of Coulomb scattering limited mobility in biaxially strained silicon MOSFETs 119
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs 119
Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization 119
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part II: Experimental Results on Flash Memory Arrays 118
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy 115
Modeling, simulation and design of the vertical Graphene Base Transistor 115
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 114
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 114
Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs 113
Impact of the Charge Transport in the Conduction Band on the Retention of Si-Nitride Based Memories 111
Comparison of modeling approaches for the capacitance-voltage and current voltage characteristics of advanced gate stacks 110
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions 110
Modeling electrostatic doping and series resistance in graphene-FETs 109
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 108
Programme and retention characteristics of SONOS memory arrays with layered tunnel barrier 107
Effects of electrical stress and ionizing radiation on Si-based TFETs 107
Does Multi Trap Assisted Tunneling Explain the Oxide Thickness Dependence of the Statistics of SILC in FLASH Memory Arrays ? 106
Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection 105
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs - Part II: Atomistic and Electrical Modeling 104
On the electron mobility enhancement in biaxially strained Si MOSFETs 104
Mobility Extraction of UTB n-MOSFETs down to 0.9 nm SOI thickness 104
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions 103
Hot carrier degradation and damage profiling of cmos devices with biased substrates 102
Nitride Layer Influence on the Hydrogen Anneal of Interface Dangling Bonds 100
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies 100
Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions 98
Substrate Enhanced Gate Currents in CMOS Devices 98
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics 98
Observation of a new hole gate current component in p+-poly gate p-channel mosfet's 98
Optimizing the Number of Steps and the Noise in Staircase APDs with Ternary III - V Semiconductor Alloys 98
Performance, degradation monitors, and reliability of the CHISEL injection regime 97
Program efficiency and high temperature retention of SiN/high-K based memories 97
Mobility extraction in SOI MOSFETs with sub 1 nm body thickness 97
Engineering of metal-MoS2 contacts to overcome Fermi level pinning 97
On the electrical monitor for device degradation in the CHISEL stress regime 95
A simulation study of the Punch-through Assisted Hot Holes Injection mechanism for non-volatile-memory cells 94
Modelling and design of FTJs as multi-level low energy memristors for neuromorphic computing 94
Versatile experimental setup for FTJ characterization 93
Simulation study of Fermi level depinning in metal-MoS2 contacts 93
Simulations and Electrical Characterization of Double-side Double Type Column 3D Detectors 92
Investigation of the Energy Distribution of Stress-Induced Oxide Traps by Numerical Analysis of the TAT of HEs 91
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 91
Simulation Study of Coulomb Mobility in Strained Silicon 90
Modelling and design of FTJs as high reading-impedance synaptic devices 90
Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation 89
Gate Current in Stacked Dielectrics for Advanced FLASH EEPROM cells 87
Simulation Study of the Trapping Properties of HfO2-Based Charge-Trap Memory Cells 82
Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes 82
Modelling, simulation and design of the vertical Graphene Base Transistor 81
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off 80
Dependability Assessment of Transfer Length Method to Extract the Metal–Graphene Contact Resistance 80
Dependable Contact Related Parameter Extraction in Graphene–Metal Junctions 79
Totale 12.430
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Categoria #
all - tutte 54.112
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 54.112
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021852 0 0 0 0 0 197 53 140 168 75 129 90
2021/2022885 48 66 37 54 6 44 63 31 11 151 240 134
2022/20231.187 120 133 14 173 83 284 10 89 143 24 47 67
2023/2024474 54 30 42 7 55 34 23 37 45 31 24 92
2024/20252.212 48 175 236 44 69 129 189 106 244 150 356 466
2025/20262.616 334 538 302 466 899 77 0 0 0 0 0 0
Totale 13.955