IRIS
DRIUSSI, Francesco
 Distribuzione geografica
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Continente #
NA - Nord America 7.129
EU - Europa 2.039
AS - Asia 1.255
SA - Sud America 170
AF - Africa 28
Continente sconosciuto - Info sul continente non disponibili 2
Totale 10.623
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Nazione #
US - Stati Uniti d'America 7.080
SG - Singapore 590
UA - Ucraina 453
IT - Italia 426
CN - Cina 386
DE - Germania 359
RU - Federazione Russa 203
FI - Finlandia 165
BR - Brasile 156
IE - Irlanda 108
SE - Svezia 87
HK - Hong Kong 81
TR - Turchia 76
FR - Francia 64
GB - Regno Unito 42
CA - Canada 35
KR - Corea 35
AT - Austria 28
NL - Olanda 21
BE - Belgio 20
IN - India 18
VN - Vietnam 18
ES - Italia 12
TG - Togo 9
MX - Messico 8
ZA - Sudafrica 8
PL - Polonia 7
BD - Bangladesh 6
GR - Grecia 5
JP - Giappone 5
MA - Marocco 5
RO - Romania 5
TW - Taiwan 5
AR - Argentina 4
AZ - Azerbaigian 4
CH - Svizzera 4
CZ - Repubblica Ceca 4
DK - Danimarca 4
PK - Pakistan 4
VE - Venezuela 4
CR - Costa Rica 3
KG - Kirghizistan 3
LK - Sri Lanka 3
LV - Lettonia 3
PH - Filippine 3
AE - Emirati Arabi Uniti 2
AM - Armenia 2
BG - Bulgaria 2
HR - Croazia 2
HU - Ungheria 2
IR - Iran 2
KE - Kenya 2
KZ - Kazakistan 2
LA - Repubblica Popolare Democratica del Laos 2
LT - Lituania 2
PA - Panama 2
PE - Perù 2
PT - Portogallo 2
SA - Arabia Saudita 2
SK - Slovacchia (Repubblica Slovacca) 2
UZ - Uzbekistan 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AO - Angola 1
BA - Bosnia-Erzegovina 1
BW - Botswana 1
CO - Colombia 1
DZ - Algeria 1
EC - Ecuador 1
EU - Europa 1
IL - Israele 1
IS - Islanda 1
JM - Giamaica 1
JO - Giordania 1
LU - Lussemburgo 1
MD - Moldavia 1
MK - Macedonia 1
MN - Mongolia 1
NO - Norvegia 1
PY - Paraguay 1
QA - Qatar 1
RS - Serbia 1
TN - Tunisia 1
UY - Uruguay 1
Totale 10.623
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Città #
Fairfield 1.002
Woodbridge 868
Houston 537
Chandler 516
Ann Arbor 507
Ashburn 464
Singapore 395
Wilmington 394
Seattle 374
Cambridge 341
Jacksonville 293
Beijing 203
Dearborn 177
Udine 169
Boardman 157
Dublin 106
Princeton 102
Hong Kong 80
Izmir 69
Hefei 49
San Diego 47
Dallas 33
Santa Clara 33
Seoul 32
Düsseldorf 29
Ogden 29
Des Moines 25
Palaiseau 25
Nuremberg 21
Ottawa 21
Brussels 20
Helsinki 20
Vienna 18
Munich 17
Dong Ket 16
Frankfurt am Main 16
Norwalk 16
Kunming 14
Los Angeles 14
New York 14
Bologna 13
Milan 12
Nanjing 12
Rome 12
São Paulo 12
Trieste 11
Codroipo 9
Grafing 9
Redmond 9
Amsterdam 8
Guangzhou 8
Jinan 8
Lomé 8
San Francisco 8
Simi Valley 8
Brooklyn 7
Martignacco 7
San Michele al Tagliamento 7
Warsaw 7
Boston 6
Lappeenranta 6
London 6
Modena 6
Moscow 6
Paris 6
Portsmouth 6
Scafati 6
Shanghai 6
Belo Horizonte 5
Chicago 5
Horia 5
Mexico City 5
Montreal 5
Parma 5
Phoenix 5
Taipei 5
Toronto 5
Zhengzhou 5
Baku 4
Barcelona 4
Buenos Aires 4
Lauterbourg 4
Nürnberg 4
Redwood City 4
Rio de Janeiro 4
Shenyang 4
Zanica 4
Andover 3
Atlanta 3
Augusta 3
Belluno 3
Bishkek 3
Brasília 3
Brno 3
Campinas 3
Chengdu 3
Chennai 3
Colombo 3
Denver 3
Fuzhou 3
Totale 7.617
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Nome #
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 180
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 177
Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories 175
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 170
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 165
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 160
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 156
Total Ionizing Dose Effects in Si-Based Tunnel FETs 153
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 153
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 144
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 141
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 140
Going ballistic: Graphene hot electron transistors 140
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 139
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 134
DFT study of graphene doping due to metal contacts 133
Hot Hole Gate Current in Surface Channel p-MOSFETs 132
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 131
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 130
Simulation of DC and RF Performance of the Graphene Base Transistor 130
Improved understanding of metal–graphene contacts 130
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap 128
Electrical Compact Modeling of Graphene Base Transistors 127
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 126
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors 124
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 123
Impact of Device Layout and Annealing Process During the Passivation of Interface States in Presence of Silicon Nitride Layers 123
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 122
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 120
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 119
Investigation of the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 118
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines 118
Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications 117
Characterization and Modeling of long term retention in SONOS Non Volatile Memories 116
On the Passivation of Interface States in SONOS Test Structures: Impact of Device Layout and Annealing Process 113
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 113
Long term charge retention dynamics of SONOS cells 112
Trade-off between Electron Velocity and Density of States in Ballistic nano-MOSFETs 111
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 111
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 111
Experimental procedure for accurate trap density study by low frequency charge pumping measurements 111
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 110
Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory 109
Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime 108
Graphene Base Transistors with optimized emitter and dielectrics 108
Substrate enhanced degradation of cmos devices 107
Revised analysis of Coulomb scattering limited mobility in biaxially strained silicon MOSFETs 107
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs 106
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part II: Experimental Results on Flash Memory Arrays 105
Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories 104
Fabrication, Characterization and Modeling of Strained SOI MOSFETs with Very Large Effective Mobility 103
Modeling, simulation and design of the vertical Graphene Base Transistor 102
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy 99
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 98
Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization 98
Impact of the Charge Transport in the Conduction Band on the Retention of Si-Nitride Based Memories 95
Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs 94
Comparison of modeling approaches for the capacitance-voltage and current voltage characteristics of advanced gate stacks 94
Does Multi Trap Assisted Tunneling Explain the Oxide Thickness Dependence of the Statistics of SILC in FLASH Memory Arrays ? 94
Effects of electrical stress and ionizing radiation on Si-based TFETs 93
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 92
Modeling electrostatic doping and series resistance in graphene-FETs 92
Programme and retention characteristics of SONOS memory arrays with layered tunnel barrier 91
Mobility Extraction of UTB n-MOSFETs down to 0.9 nm SOI thickness 90
On the electron mobility enhancement in biaxially strained Si MOSFETs 87
Hot carrier degradation and damage profiling of cmos devices with biased substrates 87
Substrate Enhanced Gate Currents in CMOS Devices 85
Mobility extraction in SOI MOSFETs with sub 1 nm body thickness 85
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 84
Program efficiency and high temperature retention of SiN/high-K based memories 83
Optimizing the Number of Steps and the Noise in Staircase APDs with Ternary III - V Semiconductor Alloys 83
Performance, degradation monitors, and reliability of the CHISEL injection regime 82
Simulation Study of Coulomb Mobility in Strained Silicon 80
On the electrical monitor for device degradation in the CHISEL stress regime 80
Investigation of the Energy Distribution of Stress-Induced Oxide Traps by Numerical Analysis of the TAT of HEs 80
Observation of a new hole gate current component in p+-poly gate p-channel mosfet's 80
Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection 80
Nitride Layer Influence on the Hydrogen Anneal of Interface Dangling Bonds 77
Gate Current in Stacked Dielectrics for Advanced FLASH EEPROM cells 74
Simulations and Electrical Characterization of Double-side Double Type Column 3D Detectors 73
Modelling, simulation and design of the vertical Graphene Base Transistor 73
Modelling and design of FTJs as multi-level low energy memristors for neuromorphic computing 72
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs - Part II: Atomistic and Electrical Modeling 71
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies 70
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics 69
Simulation Study of the Trapping Properties of HfO2-Based Charge-Trap Memory Cells 68
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 68
A simulation study of the Punch-through Assisted Hot Holes Injection mechanism for non-volatile-memory cells 66
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions 66
Simulation Study of the Graphene Base Transistor 59
Modelling and design of FTJs as high reading-impedance synaptic devices 58
Simulation study of Fermi level depinning in metal-MoS2 contacts 57
Dependability Assessment of Transfer Length Method to Extract the Metal–Graphene Contact Resistance 56
Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation 54
Versatile experimental setup for FTJ characterization 52
Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes 52
Engineering of metal-MoS2 contacts to overcome Fermi level pinning 52
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions 50
Dependable Contact Related Parameter Extraction in Graphene–Metal Junctions 50
Spectroscopic Analysis of Trap Assisted Tunneling on This Oxides by Means of Substrate Hot Electron Injection Experiments 47
Totale 10.285
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Categoria #
all - tutte 43.136
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 43.136
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020147 0 0 0 0 0 0 0 0 0 0 0 147
2020/20211.408 45 149 95 194 73 197 53 140 168 75 129 90
2021/2022885 48 66 37 54 6 44 63 31 11 151 240 134
2022/20231.187 120 133 14 173 83 284 10 89 143 24 47 67
2023/2024474 54 30 42 7 55 34 23 37 45 31 24 92
2024/20251.927 48 175 236 44 69 129 189 106 244 150 356 181
Totale 11.054