IRIS
DRIUSSI, Francesco
 Distribuzione geografica
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Continente #
NA - Nord America 6.648
EU - Europa 1.589
AS - Asia 363
AF - Africa 10
Continente sconosciuto - Info sul continente non disponibili 2
SA - Sud America 2
Totale 8.614
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Nazione #
US - Stati Uniti d'America 6.620
UA - Ucraina 448
IT - Italia 376
DE - Germania 277
CN - Cina 248
FI - Finlandia 154
IE - Irlanda 108
SE - Svezia 86
TR - Turchia 72
FR - Francia 39
GB - Regno Unito 29
CA - Canada 26
BE - Belgio 18
VN - Vietnam 17
RU - Federazione Russa 14
IN - India 11
AT - Austria 10
TG - Togo 8
RO - Romania 5
TW - Taiwan 5
ES - Italia 4
NL - Olanda 4
CH - Svizzera 3
GR - Grecia 3
KR - Corea 3
DK - Danimarca 2
JP - Giappone 2
ZA - Sudafrica 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BG - Bulgaria 1
BR - Brasile 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
EU - Europa 1
HK - Hong Kong 1
HU - Ungheria 1
IR - Iran 1
LU - Lussemburgo 1
MD - Moldavia 1
MK - Macedonia 1
MN - Mongolia 1
MX - Messico 1
PE - Perù 1
PH - Filippine 1
PK - Pakistan 1
PL - Polonia 1
PT - Portogallo 1
RS - Serbia 1
Totale 8.614
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Città #
Fairfield 1.002
Woodbridge 868
Houston 537
Chandler 516
Ann Arbor 507
Ashburn 460
Wilmington 394
Seattle 371
Cambridge 340
Jacksonville 293
Dearborn 177
Udine 164
Beijing 133
Dublin 106
Princeton 102
Izmir 69
San Diego 47
Ogden 29
Des Moines 25
Palaiseau 25
Hefei 20
Ottawa 19
Boardman 18
Brussels 18
Dong Ket 16
Norwalk 16
Helsinki 14
Kunming 14
Bologna 13
Nanjing 12
Rome 12
New York 10
Trieste 10
Codroipo 9
Grafing 9
Redmond 9
Vienna 9
Jinan 8
Lomé 8
Simi Valley 8
Guangzhou 7
Martignacco 7
Modena 6
Scafati 6
Horia 5
Taipei 5
Zhengzhou 5
Barcelona 4
Munich 4
Nürnberg 4
Redwood City 4
Shenyang 4
Toronto 4
Zanica 4
Andover 3
Chengdu 3
Indiana 3
Montreal 3
Nanchang 3
Paris 3
Phoenix 3
Quzhou 3
Sacile 3
Shanghai 3
Anzio 2
Auburn Hills 2
Augusta 2
Campoformido 2
Castelfranco Veneto 2
Cervignano Del Friuli 2
Chongqing 2
Copenhagen 2
Ferrara 2
Fuzhou 2
Gatteo 2
Gemona 2
Hangzhou 2
Hebei 2
Istanbul 2
Johannesburg 2
Kozhikode 2
Lappeenranta 2
London 2
Los Angeles 2
Milan 2
Moscow 2
Nanning 2
Ningbo 2
Nuremberg 2
Rivignano 2
Shenzhen 2
Trento 2
Wuhan 2
Zurich 2
Addison 1
Albuquerque 1
Amsterdam 1
Bac Ninh 1
Baotou 1
Belgrade 1
Totale 6.582
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Nome #
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 163
Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories 161
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 156
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 153
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 146
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 142
Total Ionizing Dose Effects in Si-Based Tunnel FETs 138
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 130
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 129
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 125
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 124
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 124
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 123
Going ballistic: Graphene hot electron transistors 122
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 121
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 119
Simulation of DC and RF Performance of the Graphene Base Transistor 116
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 115
Hot Hole Gate Current in Surface Channel p-MOSFETs 115
Electrical Compact Modeling of Graphene Base Transistors 113
DFT study of graphene doping due to metal contacts 113
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap 110
Impact of Device Layout and Annealing Process During the Passivation of Interface States in Presence of Silicon Nitride Layers 110
Improved understanding of metal–graphene contacts 108
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors 107
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 107
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 106
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 106
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 104
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines 104
On the Passivation of Interface States in SONOS Test Structures: Impact of Device Layout and Annealing Process 103
Graphene Base Transistors with optimized emitter and dielectrics 102
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 102
Experimental procedure for accurate trap density study by low frequency charge pumping measurements 101
Investigation of the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 100
Long term charge retention dynamics of SONOS cells 99
Characterization and Modeling of long term retention in SONOS Non Volatile Memories 98
Sub-1 nm Equivalent Oxide Thickness Al-HfO2 Trapping Layer with Excellent Thermal Stability and Retention for Nonvolatile Memory 98
Substrate enhanced degradation of cmos devices 97
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 97
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs 96
Modeling, simulation and design of the vertical Graphene Base Transistor 96
Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method 95
Trade-off between Electron Velocity and Density of States in Ballistic nano-MOSFETs 93
Fabrication, Characterization and Modeling of Strained SOI MOSFETs with Very Large Effective Mobility 93
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part II: Experimental Results on Flash Memory Arrays 93
Revised analysis of Coulomb scattering limited mobility in biaxially strained silicon MOSFETs 93
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 93
Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications 92
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 92
Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime 91
Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories 86
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy 85
Modeling electrostatic doping and series resistance in graphene-FETs 85
Effects of electrical stress and ionizing radiation on Si-based TFETs 83
Does Multi Trap Assisted Tunneling Explain the Oxide Thickness Dependence of the Statistics of SILC in FLASH Memory Arrays ? 83
Programme and retention characteristics of SONOS memory arrays with layered tunnel barrier 80
Comparison of modeling approaches for the capacitance-voltage and current voltage characteristics of advanced gate stacks 80
Impact of the Charge Transport in the Conduction Band on the Retention of Si-Nitride Based Memories 79
Hot carrier degradation and damage profiling of cmos devices with biased substrates 78
Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs 77
On the electron mobility enhancement in biaxially strained Si MOSFETs 77
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 77
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 76
Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization 76
Substrate Enhanced Gate Currents in CMOS Devices 74
Performance, degradation monitors, and reliability of the CHISEL injection regime 72
Mobility extraction in SOI MOSFETs with sub 1 nm body thickness 72
On the electrical monitor for device degradation in the CHISEL stress regime 71
Program efficiency and high temperature retention of SiN/high-K based memories 71
Simulation Study of Coulomb Mobility in Strained Silicon 69
Optimizing the Number of Steps and the Noise in Staircase APDs with Ternary III - V Semiconductor Alloys 69
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 68
Observation of a new hole gate current component in p+-poly gate p-channel mosfet's 68
Investigation of the Energy Distribution of Stress-Induced Oxide Traps by Numerical Analysis of the TAT of HEs 67
Simulations and Electrical Characterization of Double-side Double Type Column 3D Detectors 67
Mobility Extraction of UTB n-MOSFETs down to 0.9 nm SOI thickness 67
Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection 66
Gate Current in Stacked Dielectrics for Advanced FLASH EEPROM cells 64
Nitride Layer Influence on the Hydrogen Anneal of Interface Dangling Bonds 63
Modelling, simulation and design of the vertical Graphene Base Transistor 63
Simulation Study of the Trapping Properties of HfO2-Based Charge-Trap Memory Cells 60
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs - Part II: Atomistic and Electrical Modeling 57
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies 54
Modelling and design of FTJs as multi-level low energy memristors for neuromorphic computing 50
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions 48
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics 47
Simulation Study of the Graphene Base Transistor 47
A simulation study of the Punch-through Assisted Hot Holes Injection mechanism for non-volatile-memory cells 47
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 43
Modelling and design of FTJs as high reading-impedance synaptic devices 39
Spectroscopic Analysis of Trap Assisted Tunneling on This Oxides by Means of Substrate Hot Electron Injection Experiments 35
Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes 35
Simulation study of Fermi level depinning in metal-MoS2 contacts 35
Dependable Contact Related Parameter Extraction in Graphene–Metal Junctions 32
Versatile experimental setup for FTJ characterization 30
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon 30
Full-Band Monte Carlo simulations of GaAs p-i-n Avalanche PhotoDiodes: What Are the Limits of Nonlocal Impact Ionization Models? 29
Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation 28
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions 28
Totale 8.721
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Categoria #
all - tutte 27.112
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 27.112
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019694 0 0 0 0 0 0 0 0 0 0 392 302
2019/20202.647 164 133 99 399 197 369 294 311 256 204 74 147
2020/20211.408 45 149 95 194 73 197 53 140 168 75 129 90
2021/2022885 48 66 37 54 6 44 63 31 11 151 240 134
2022/20231.187 120 133 14 173 83 284 10 89 143 24 47 67
2023/2024359 54 30 42 7 55 34 23 37 45 31 1 0
Totale 9.012