This paper reports experimental evidence of a new, substrate-enhanced component of the gate current of p+ -poly gate pMOS transistors. The phenomenon is characterized as a function of drain, gate and substrate bias on devices featuring three different drain engineering options. The new current component is ascribed to an impact ionization feedback mechanism similar to that responsible of CHISEL in nMOSFETs.
Observation of a new hole gate current component in p+-poly gate p-channel mosfet's
DRIUSSI, Francesco;ESSENI, David;SELMI, Luca;
2000-01-01
Abstract
This paper reports experimental evidence of a new, substrate-enhanced component of the gate current of p+ -poly gate pMOS transistors. The phenomenon is characterized as a function of drain, gate and substrate bias on devices featuring three different drain engineering options. The new current component is ascribed to an impact ionization feedback mechanism similar to that responsible of CHISEL in nMOSFETs.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
2000_09_ESSDERC_Driussi_ObservationNewHole.pdf
non disponibili
Tipologia:
Documento in Post-print
Licenza:
Non pubblico
Dimensione
167.36 kB
Formato
Adobe PDF
|
167.36 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
