We model the source/drain series resistance and the electrostatic doping effects associated to the source and drain metals in graphene FETs using a Monte Carlo transport simulator. We compare the new model to simulations assuming chemical doping in the source/drain regions. A procedure to include the series resistance as part of the self–consistent Monte Carlo loop is proposed and verified against the widely employed method based on look–up tables.
Titolo: | Modeling electrostatic doping and series resistance in graphene-FETs |
Autori: | |
Data di pubblicazione: | 2016 |
Abstract: | We model the source/drain series resistance and the electrostatic doping effects associated to the source and drain metals in graphene FETs using a Monte Carlo transport simulator. We compare the new model to simulations assuming chemical doping in the source/drain regions. A procedure to include the series resistance as part of the self–consistent Monte Carlo loop is proposed and verified against the widely employed method based on look–up tables. |
Handle: | http://hdl.handle.net/11390/1104450 |
ISBN: | 978-1-5090-0818-6 |
Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
File in questo prodotto:
File | Descrizione | Tipologia | Licenza | |
---|---|---|---|---|
sispad-2016-proceedings.pdf | Articolo principale | Versione Editoriale (PDF) | Non pubblico | Accesso ristretto Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.