In this work, we explore the potential of Kelvin Force Microscopy (KFM) measurements to investigate the lateral charge transport in SiN layers with two different compositions (standard, std, and Silicon rich, Si-rich). The dynamics of the lateral spread of the trapped charge is analyzed with the help of three dimensional numerical device simulations.
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy
VIANELLO, Elisa;DRIUSSI, Francesco;SELMI, Luca
2010-01-01
Abstract
In this work, we explore the potential of Kelvin Force Microscopy (KFM) measurements to investigate the lateral charge transport in SiN layers with two different compositions (standard, std, and Silicon rich, Si-rich). The dynamics of the lateral spread of the trapped charge is analyzed with the help of three dimensional numerical device simulations.File in questo prodotto:
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