IRIS

VIANELLO, Elisa

VIANELLO, Elisa  

DPIA - DIPARTIMENTO POLITECNICO DI INGEGNERIA E ARCHITETTURA  

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Risultati 1 - 13 di 13 (tempo di esecuzione: 0.025 secondi).
Titolo Data di pubblicazione Autore(i) File
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 1-gen-2010 Vianello, Elisa; Nowak, E; Perniola, L; Driussi, Francesco; Blaise, P; Molas, G; DE SALVO, B; Selmi, Luca
An in-depth investigation of physical mechanisms governing SANOS memories characteristics 1-gen-2009 M., Bocquet; Vianello, Elisa; G., Molas; L., Perniola; H., Grampeix; F., Martin; J. P., Colonna; A. M., Papon; P., Brianceau; M., Gély; B., De Salvo; G., Pananakakis; G., Ghibaudo; Selmi, Luca
Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices 1-gen-2010 Etienne, Nowak; Vianello, Elisa; Luca, Perniola; Marc, Bocquet; Gabriel, Molas; Rabah, Kies; Marc, Gely; Gerard, Ghibaudo; Barbara De, Salvo; Gilles, Reimbold; Fabien, Boulanger
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy 1-gen-2010 Vianello, Elisa; Nowak, E; Mariolle, D; Chevalier, N; Perniola, L; Molas, G; Colonna, J; Driussi, Francesco; Selmi, Luca
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 1-gen-2009 Vianello, Elisa; Driussi, Francesco; Arreghini, Antonio; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; N., Akil; M. J., van Duuren; D. S., Golubovic
Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories 1-gen-2010 Spiga, S.; Congedo, G.; Russo, U.; Lamperti, A.; Salicio, O.; Driussi, Francesco; Vianello, Elisa
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 1-gen-2008 Arreghini, A; Driussi, F; Vianello, E; Esseni, D; VAN DUUREN, M. J.; Gobulovic, D. S.; Akil, N; VAN SCHAIJK, R
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 1-gen-2007 Vianello, Elisa; Driussi, Francesco; Esseni, David; Selmi, Luca; Widdershoven, F; VAN DUUREN, M. J.
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs - Part II: Atomistic and Electrical Modeling 1-gen-2011 Vianello, Elisa; Driussi, Francesco; Blaise, P.; Palestri, Pierpaolo; Esseni, David; Perniola, L.; Molas, G.; De Salvo, B.; Selmi, Luca
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 1-gen-2011 Vianello, Elisa; Driussi, Francesco; Perniola, L; Molas, G; Colonna, J. P.; DE SALVO, B; Selmi, Luca
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 1-gen-2009 Vianello, Elisa; Perniola, L; Blaise, P; Molas, G; Colonna, J. P.; Driussi, Francesco; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Rochat, N; Licitra, C; Lafond, D; Kies, R; Reimbold, G; DE SALVO, B; Boulanger, F.
Reliability of charge trapping memories with high-k control dielectrics 1-gen-2009 G., Molas; M., Bocquet; Vianello, Elisa; L., Perniola; H., Grampeix; J. P., Colonna; L., Masarotto; F., Martin; P., Brianceau; M., Gély; C., Bongiorno; S., Lombardo; G., Pananakakis; G., Ghibaudo; B., De Salvo
Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses 1-gen-2011 Masoero, L.; Molas, G.; Blaise, P.; Colonna, J. P.; Vianello, Elisa; Selmi, Luca; Papon, A. M.; Lafond, D.; Martin, F.; Gely, M.; Licitra, C.; Barnes, J. P.; Ghibaudo, G.; DE SALVO, B.