Ferroelectric Tunnel Junctions (FTJ) are intriguing electron devices which can be operated as memristors and artificial synapses for hardware neural networks. In this work, two virtual–grounded amplifiers have been designed to extract the hysteretic I–V and Q–V characteristics directly, and good agreement between repeated measurements on both circuits demonstrates the accuracy and flexibility of the two setups. Optimal measurement conditions have also been assessed and, finally, wake–up, fatigue, and the preset–dependent early breakdown have been studied.

Versatile experimental setup for FTJ characterization

M. Massarotto
Primo
;
F. Driussi
Secondo
;
A. Affanni;D. Esseni
2022-01-01

Abstract

Ferroelectric Tunnel Junctions (FTJ) are intriguing electron devices which can be operated as memristors and artificial synapses for hardware neural networks. In this work, two virtual–grounded amplifiers have been designed to extract the hysteretic I–V and Q–V characteristics directly, and good agreement between repeated measurements on both circuits demonstrates the accuracy and flexibility of the two setups. Optimal measurement conditions have also been assessed and, finally, wake–up, fatigue, and the preset–dependent early breakdown have been studied.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/1229137
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