CARUSO, Enrico
 Distribuzione geografica
Continente #
NA - Nord America 151
EU - Europa 144
AS - Asia 43
AF - Africa 17
OC - Oceania 3
SA - Sud America 2
Totale 360
Nazione #
US - Stati Uniti d'America 150
IT - Italia 74
CN - Cina 18
DZ - Algeria 14
DE - Germania 13
RU - Federazione Russa 11
JP - Giappone 9
CZ - Repubblica Ceca 8
IE - Irlanda 8
SE - Svezia 7
FR - Francia 6
PL - Polonia 6
KR - Corea 4
VN - Vietnam 4
AU - Australia 3
GB - Regno Unito 3
IN - India 3
AT - Austria 2
IR - Iran 2
MA - Marocco 2
UA - Ucraina 2
BE - Belgio 1
CA - Canada 1
CH - Svizzera 1
CL - Cile 1
ID - Indonesia 1
MY - Malesia 1
NL - Olanda 1
NO - Norvegia 1
UZ - Uzbekistan 1
VE - Venezuela 1
ZA - Sudafrica 1
Totale 360
Città #
Udine 31
Fairfield 14
Woodbridge 14
Ashburn 11
Buffalo 11
Wilmington 10
Houston 9
Seattle 9
Ann Arbor 7
Beijing 7
Cork 6
Santa Cruz 6
Stockholm 6
Tokyo 6
Cambridge 4
Dong Ket 4
Las Vegas 4
Warsaw 4
Blida 3
Des Moines 3
Aachen 2
Boardman 2
Clearwater 2
Fleming Island 2
Fremont 2
Hangzhou 2
Hyderabad 2
Khouribga 2
Milpitas 2
Modena 2
Polska 2
Sydney 2
Thenia 2
Vienna 2
Wuhan 2
Aurora 1
Bologna 1
Chicago 1
Chīrāla 1
Dallas 1
Davis 1
Dublin 1
Easton 1
Figtree 1
Frisco 1
George Town 1
Heidesheim 1
Jakarta 1
Leawood 1
London 1
Los Angeles 1
Luedinghausen 1
Lund 1
Marietta 1
Muizenberg 1
Munich 1
Pars 1
Phoenix 1
Rome 1
San Diego 1
San Francisco 1
San Jose 1
San Mateo 1
Sarpsborg 1
Shanghai 1
Toronto 1
Treviso 1
Trieste 1
Zurich 1
Totale 233
Nome #
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells, file e27ce0c2-6742-055e-e053-6605fe0a7873 169
Performance evaluation of III-V compound semiconductor n-MOSFETs employing calibrated multi-valley and Multi-Subband Monte Carlo transport models, file e27ce0c5-5b47-055e-e053-6605fe0a7873 74
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs, file e27ce0c3-2751-055e-e053-6605fe0a7873 53
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-of-the-Roadmap III–V MOSFETs, file e27ce0c7-6d17-055e-e053-6605fe0a7873 44
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs, file e27ce0c2-b4ee-055e-e053-6605fe0a7873 8
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes, file e27ce0c3-67b3-055e-e053-6605fe0a7873 8
Physics-based TCAD analysis of Border and Interface traps in Al2O3/InGaAs stacks using Multifrequency CV-curves, file e27ce0c5-3004-055e-e053-6605fe0a7873 8
Improved surface roughness modeling and mobility projections in thin film MOSFETs, file e27ce0c2-4191-055e-e053-6605fe0a7873 4
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain, file e27ce0c1-c819-055e-e053-6605fe0a7873 2
The impact of interface states on the mobility and the drive current of III-V MOSFETs, file e27ce0c1-ef17-055e-e053-6605fe0a7873 2
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes, file e27ce0c3-eedd-055e-e053-6605fe0a7873 2
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: from advanced models for band structures, electrostatics and transport to TCAD, file e27ce0c4-f282-055e-e053-6605fe0a7873 2
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs, file c8cdfe1a-3375-4797-97d3-2f19bb725ac8 1
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors, file e27ce0c2-2013-055e-e053-6605fe0a7873 1
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps, file e27ce0c2-3a97-055e-e053-6605fe0a7873 1
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections, file e27ce0c3-8870-055e-e053-6605fe0a7873 1
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-of-the-Roadmap III–V MOSFETs, file e27ce0c7-621a-055e-e053-6605fe0a7873 1
The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in {MOS} Systems, file e27ce0c8-fdfd-055e-e053-6605fe0a7873 1
Totale 382
Categoria #
all - tutte 678
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 678


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201933 0 0 0 0 0 0 0 0 3 5 15 10
2019/202080 8 5 9 8 5 4 5 7 8 4 4 13
2020/202153 4 5 5 6 5 4 10 3 2 1 3 5
2021/202250 7 3 4 4 6 3 1 4 0 8 7 3
2022/202378 4 4 17 12 3 6 5 9 6 6 6 0
2023/202424 1 0 7 3 0 3 7 2 1 0 0 0
Totale 382