IRIS
CARUSO, Enrico
 Distribuzione geografica
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Continente #
NA - Nord America 2.165
EU - Europa 643
AS - Asia 634
SA - Sud America 72
AF - Africa 26
OC - Oceania 4
Continente sconosciuto - Info sul continente non disponibili 2
AN - Antartide 1
Totale 3.547
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Nazione #
US - Stati Uniti d'America 2.147
SG - Singapore 299
IT - Italia 164
CN - Cina 157
DE - Germania 103
UA - Ucraina 99
HK - Hong Kong 83
BR - Brasile 57
SE - Svezia 55
RU - Federazione Russa 46
FI - Finlandia 35
GB - Regno Unito 34
IE - Irlanda 31
VN - Vietnam 23
TR - Turchia 19
BE - Belgio 15
FR - Francia 14
CA - Canada 13
IN - India 13
PL - Polonia 11
AT - Austria 10
JP - Giappone 9
MG - Madagascar 9
AR - Argentina 6
GR - Grecia 6
KR - Corea 5
TW - Taiwan 5
BD - Bangladesh 4
CH - Svizzera 4
LT - Lituania 4
MX - Messico 4
NL - Olanda 4
ZA - Sudafrica 4
DZ - Algeria 3
PK - Pakistan 3
AM - Armenia 2
CO - Colombia 2
CZ - Repubblica Ceca 2
EC - Ecuador 2
ES - Italia 2
EU - Europa 2
ID - Indonesia 2
NG - Nigeria 2
NZ - Nuova Zelanda 2
OM - Oman 2
PE - Perù 2
SN - Senegal 2
VE - Venezuela 2
AO - Angola 1
AQ - Antartide 1
AU - Australia 1
AZ - Azerbaigian 1
BF - Burkina Faso 1
BO - Bolivia 1
CI - Costa d'Avorio 1
EE - Estonia 1
ET - Etiopia 1
GE - Georgia 1
HU - Ungheria 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LC - Santa Lucia 1
LK - Sri Lanka 1
LU - Lussemburgo 1
MA - Marocco 1
NR - Nauru 1
PH - Filippine 1
SI - Slovenia 1
TN - Tunisia 1
UZ - Uzbekistan 1
Totale 3.547
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Città #
Woodbridge 249
Fairfield 241
Chandler 204
Ann Arbor 193
Houston 166
Singapore 141
Ashburn 125
Seattle 110
Wilmington 109
Cambridge 89
Hong Kong 77
Beijing 71
Udine 65
Dearborn 62
Jacksonville 61
Boardman 40
Los Angeles 29
Munich 27
Princeton 24
Cervignano Del Friuli 21
Dublin 20
Izmir 17
Des Moines 14
Redmond 14
Brussels 13
Lappeenranta 13
Buffalo 10
Redondo Beach 10
San Diego 10
Cork 9
Trieste 9
Ho Chi Minh City 8
Modena 8
Nanjing 7
New York 7
Pune 7
Vienna 7
Dong Ket 6
Düsseldorf 6
Warsaw 6
Frankfurt am Main 5
Norwalk 5
Parma 5
São Paulo 5
Toronto 5
Cagliari 4
Dallas 4
Hanoi 4
Milan 4
Nuremberg 4
Redwood City 4
Santa Clara 4
Shanghai 4
Xi'an 4
Bologna 3
Boston 3
Brooklyn 3
Chicago 3
Denver 3
Hangzhou 3
Helsinki 3
Kraków 3
Manchester 3
Mexico City 3
Nanchang 3
Ogden 3
Phoenix 3
Portsmouth 3
Reading 3
San Francisco 3
Sapporo 3
Shenyang 3
Stockholm 3
Tokyo 3
Turku 3
Amsterdam 2
Belo Horizonte 2
Bom Despacho 2
Changsha 2
Charlotte 2
Chengdu 2
Colombo 2
Concord 2
Dakar 2
Florence 2
Frattamaggiore 2
Fremont 2
Graz 2
Grenoble 2
Gruaro 2
Hefei 2
Hyderabad 2
Ibadan 2
Johannesburg 2
Kunming 2
Lima 2
Lund 2
Mcallen 2
Montreal 2
Mumbai 2
Totale 2.479
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Nome #
Improved surface roughness modeling and mobility projections in thin film MOSFETs 221
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 203
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 184
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 182
Performance evaluation of III-V compound semiconductor n-MOSFETs employing calibrated multi-valley and Multi-Subband Monte Carlo transport models 178
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 177
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 174
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 167
The impact of interface states on the mobility and the drive current of III-V MOSFETs 157
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 156
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections 156
Modeling approaches for band-structure calculation in III-V FET quantum wells 154
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 151
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 150
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 144
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 142
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 137
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 131
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: from advanced models for band structures, electrostatics and transport to TCAD 127
Modeling 1/f and Lorenzian noise in III-V MOSFETs 121
Relationship between capacitance and conductance in MOS capacitors 116
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 98
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-of-the-Roadmap III–V MOSFETs 95
Compact expression to model the effects of dielectric absorption on analog-to-digital converters 55
The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in {MOS} Systems 50
Physics-based TCAD analysis of Border and Interface traps in Al2O3/InGaAs stacks using Multifrequency CV-curves 10
Totale 3.636
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Categoria #
all - tutte 12.337
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 12.337
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021230 0 0 0 0 0 41 27 38 35 22 36 31
2021/2022239 14 20 21 14 6 10 13 12 2 35 59 33
2022/2023388 28 51 5 72 31 91 1 35 52 4 8 10
2023/2024119 17 13 6 4 8 17 3 15 7 14 5 10
2024/2025480 6 30 24 27 34 33 38 48 41 35 54 110
2025/2026466 60 87 52 49 184 34 0 0 0 0 0 0
Totale 3.636