CARUSO, Enrico
 Distribuzione geografica
Continente #
NA - Nord America 2.051
EU - Europa 600
AS - Asia 265
SA - Sud America 34
AF - Africa 16
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 1
Totale 2.969
Nazione #
US - Stati Uniti d'America 2.045
IT - Italia 160
SG - Singapore 107
UA - Ucraina 99
CN - Cina 92
DE - Germania 87
SE - Svezia 53
RU - Federazione Russa 46
FI - Finlandia 31
GB - Regno Unito 31
IE - Irlanda 31
BR - Brasile 26
TR - Turchia 17
BE - Belgio 15
FR - Francia 14
IN - India 10
HK - Hong Kong 9
MG - Madagascar 9
PL - Polonia 9
AT - Austria 8
GR - Grecia 6
JP - Giappone 6
VN - Vietnam 6
CA - Canada 5
KR - Corea 4
TW - Taiwan 4
CH - Svizzera 3
AM - Armenia 2
AR - Argentina 2
CZ - Repubblica Ceca 2
DZ - Algeria 2
EC - Ecuador 2
EU - Europa 2
NL - Olanda 2
PE - Perù 2
ZA - Sudafrica 2
AZ - Azerbaigian 1
BO - Bolivia 1
CI - Costa d'Avorio 1
CO - Colombia 1
GE - Georgia 1
HU - Ungheria 1
ID - Indonesia 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
LT - Lituania 1
LU - Lussemburgo 1
MA - Marocco 1
MX - Messico 1
NZ - Nuova Zelanda 1
OM - Oman 1
PK - Pakistan 1
TN - Tunisia 1
Totale 2.969
Città #
Woodbridge 249
Fairfield 241
Chandler 204
Ann Arbor 193
Houston 166
Ashburn 112
Seattle 110
Wilmington 109
Cambridge 89
Singapore 70
Udine 64
Dearborn 62
Jacksonville 61
Boardman 40
Beijing 30
Princeton 24
Cervignano Del Friuli 21
Dublin 20
Izmir 17
Des Moines 14
Redmond 14
Brussels 13
Los Angeles 13
Lappeenranta 12
Munich 12
San Diego 10
Cork 9
Trieste 9
Modena 8
Nanjing 7
Pune 7
Dong Ket 6
Düsseldorf 6
Norwalk 5
Parma 5
Vienna 5
Cagliari 4
Frankfurt am Main 4
Nuremberg 4
Redwood City 4
Shanghai 4
Warsaw 4
Xi'an 4
Bologna 3
Helsinki 3
Hong Kong 3
Kraków 3
Nanchang 3
New York 3
Ogden 3
Portsmouth 3
Reading 3
San Francisco 3
Santa Clara 3
Sapporo 3
Shenyang 3
Belo Horizonte 2
Changsha 2
Chengdu 2
Florence 2
Frattamaggiore 2
Fremont 2
Graz 2
Grenoble 2
Gruaro 2
Hangzhou 2
Hyderabad 2
Kunming 2
Lima 2
Lund 2
Mcallen 2
Milan 2
Montreal 2
Nanning 2
Osaka 2
Rzeszów 2
Taipei 2
Taiyuan 2
Toronto 2
Wuhan 2
Wuxi 2
Yerevan 2
Zurich 2
Albuquerque 1
Araraquara 1
Atlanta 1
Auckland 1
Baku 1
Baotou 1
Barueri 1
Bauru 1
Bishkek 1
Bom Despacho 1
Bom Retiro 1
Brooklyn 1
Budapest 1
Burzaco 1
Campinas 1
Castelfranco Veneto 1
Cayambe 1
Totale 2.175
Nome #
Improved surface roughness modeling and mobility projections in thin film MOSFETs 191
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 177
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 163
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 158
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 151
Performance evaluation of III-V compound semiconductor n-MOSFETs employing calibrated multi-valley and Multi-Subband Monte Carlo transport models 147
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 145
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 141
The impact of interface states on the mobility and the drive current of III-V MOSFETs 139
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections 137
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 135
Modeling approaches for band-structure calculation in III-V FET quantum wells 134
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 130
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 127
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 120
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 117
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 113
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 113
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: from advanced models for band structures, electrostatics and transport to TCAD 102
Modeling 1/f and Lorenzian noise in III-V MOSFETs 102
Relationship between capacitance and conductance in MOS capacitors 94
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 77
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-of-the-Roadmap III–V MOSFETs 68
The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in {MOS} Systems 37
Compact expression to model the effects of dielectric absorption on analog-to-digital converters 27
Physics-based TCAD analysis of Border and Interface traps in Al2O3/InGaAs stacks using Multifrequency CV-curves 10
Totale 3.055
Categoria #
all - tutte 10.103
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 10.103


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202051 0 0 0 0 0 0 0 0 0 0 18 33
2020/2021382 10 47 20 59 16 41 27 38 35 22 36 31
2021/2022239 14 20 21 14 6 10 13 12 2 35 59 33
2022/2023388 28 51 5 72 31 91 1 35 52 4 8 10
2023/2024119 17 13 6 4 8 17 3 15 7 14 5 10
2024/2025365 6 30 24 27 34 33 38 48 41 35 49 0
Totale 3.055