IRIS
CARUSO, Enrico
 Distribuzione geografica
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Continente #
NA - Nord America 2.289
AS - Asia 757
EU - Europa 685
SA - Sud America 87
AF - Africa 33
OC - Oceania 4
Continente sconosciuto - Info sul continente non disponibili 2
AN - Antartide 1
Totale 3.858
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Nazione #
US - Stati Uniti d'America 2.267
SG - Singapore 354
CN - Cina 171
IT - Italia 170
DE - Germania 106
UA - Ucraina 99
HK - Hong Kong 86
BR - Brasile 63
SE - Svezia 55
RU - Federazione Russa 46
VN - Vietnam 40
GB - Regno Unito 39
FI - Finlandia 37
FR - Francia 37
IE - Irlanda 31
IN - India 23
TR - Turchia 20
CA - Canada 17
BE - Belgio 15
AR - Argentina 12
JP - Giappone 11
PL - Polonia 11
AT - Austria 10
MG - Madagascar 9
BD - Bangladesh 8
GR - Grecia 6
NL - Olanda 6
DZ - Algeria 5
IQ - Iraq 5
KR - Corea 5
TW - Taiwan 5
CH - Svizzera 4
CO - Colombia 4
LT - Lituania 4
MX - Messico 4
MY - Malesia 4
ZA - Sudafrica 4
PK - Pakistan 3
TN - Tunisia 3
AM - Armenia 2
AO - Angola 2
CZ - Repubblica Ceca 2
EC - Ecuador 2
ES - Italia 2
EU - Europa 2
ID - Indonesia 2
LB - Libano 2
MA - Marocco 2
NG - Nigeria 2
NZ - Nuova Zelanda 2
OM - Oman 2
PE - Perù 2
PH - Filippine 2
SA - Arabia Saudita 2
SN - Senegal 2
VE - Venezuela 2
AE - Emirati Arabi Uniti 1
AQ - Antartide 1
AU - Australia 1
AZ - Azerbaigian 1
BF - Burkina Faso 1
BO - Bolivia 1
CI - Costa d'Avorio 1
CL - Cile 1
DK - Danimarca 1
EE - Estonia 1
ET - Etiopia 1
GE - Georgia 1
HU - Ungheria 1
IL - Israele 1
KE - Kenya 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LC - Santa Lucia 1
LK - Sri Lanka 1
LU - Lussemburgo 1
NP - Nepal 1
NR - Nauru 1
SI - Slovenia 1
TH - Thailandia 1
UZ - Uzbekistan 1
Totale 3.858
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Città #
Woodbridge 249
Fairfield 241
Chandler 204
Ann Arbor 193
Singapore 168
Houston 166
Ashburn 145
Seattle 110
Wilmington 109
Cambridge 89
Hong Kong 80
Beijing 72
San Jose 66
Udine 65
Dearborn 62
Jacksonville 61
Boardman 40
Los Angeles 31
Munich 27
Princeton 24
Cervignano Del Friuli 21
Lauterbourg 21
Dublin 20
Izmir 17
Des Moines 14
Redmond 14
Brussels 13
Ho Chi Minh City 13
Lappeenranta 13
Buffalo 10
Hanoi 10
Redondo Beach 10
San Diego 10
Santa Clara 10
Cork 9
Trieste 9
Frankfurt am Main 8
Modena 8
Nanjing 7
New York 7
Pune 7
Vienna 7
Dong Ket 6
Düsseldorf 6
São Paulo 6
Toronto 6
Warsaw 6
Chicago 5
Helsinki 5
Norwalk 5
Parma 5
Shanghai 5
Tokyo 5
Atlanta 4
Baghdad 4
Cagliari 4
Chennai 4
Dallas 4
Denver 4
Hangzhou 4
Manchester 4
Milan 4
Mumbai 4
Nuremberg 4
Redwood City 4
Xi'an 4
Amsterdam 3
Belo Horizonte 3
Bologna 3
Boston 3
Brooklyn 3
Kraków 3
London 3
Mexico City 3
Nanchang 3
Newark 3
Ogden 3
Orem 3
Phoenix 3
Portsmouth 3
Reading 3
San Francisco 3
Sapporo 3
Shenyang 3
Stockholm 3
Turku 3
Vancouver 3
Bayan Lepas 2
Bom Despacho 2
Changsha 2
Charlotte 2
Chengdu 2
Colombo 2
Concord 2
Council Bluffs 2
Dakar 2
Florence 2
Frattamaggiore 2
Fremont 2
Graz 2
Totale 2.661
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Nome #
Improved surface roughness modeling and mobility projections in thin film MOSFETs 238
Performance evaluation of III-V compound semiconductor n-MOSFETs employing calibrated multi-valley and Multi-Subband Monte Carlo transport models 215
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 212
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 200
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 193
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 186
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 185
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 177
The impact of interface states on the mobility and the drive current of III-V MOSFETs 170
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 165
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections 165
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 164
Modeling approaches for band-structure calculation in III-V FET quantum wells 163
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 161
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 159
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 155
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 151
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 144
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: from advanced models for band structures, electrostatics and transport to TCAD 137
Modeling 1/f and Lorenzian noise in III-V MOSFETs 128
Relationship between capacitance and conductance in MOS capacitors 123
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 110
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-of-the-Roadmap III–V MOSFETs 106
Compact expression to model the effects of dielectric absorption on analog-to-digital converters 74
The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in {MOS} Systems 56
Physics-based TCAD analysis of Border and Interface traps in Al2O3/InGaAs stacks using Multifrequency CV-curves 10
Totale 3.947
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Categoria #
all - tutte 13.131
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 13.131
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202167 0 0 0 0 0 0 0 0 0 0 36 31
2021/2022239 14 20 21 14 6 10 13 12 2 35 59 33
2022/2023388 28 51 5 72 31 91 1 35 52 4 8 10
2023/2024119 17 13 6 4 8 17 3 15 7 14 5 10
2024/2025480 6 30 24 27 34 33 38 48 41 35 54 110
2025/2026777 60 87 52 49 184 82 126 19 56 51 11 0
Totale 3.947