IRIS
CARUSO, Enrico
 Distribuzione geografica
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Continente #
NA - Nord America 2.002
EU - Europa 509
AS - Asia 194
AF - Africa 11
SA - Sud America 3
Continente sconosciuto - Info sul continente non disponibili 2
Totale 2.721
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Nazione #
US - Stati Uniti d'America 1.999
IT - Italia 149
UA - Ucraina 99
CN - Cina 84
DE - Germania 72
SG - Singapore 62
SE - Svezia 52
IE - Irlanda 31
FI - Finlandia 30
GB - Regno Unito 25
TR - Turchia 17
BE - Belgio 15
IN - India 10
MG - Madagascar 9
PL - Polonia 9
AT - Austria 8
FR - Francia 7
GR - Grecia 6
JP - Giappone 6
VN - Vietnam 6
CA - Canada 3
CH - Svizzera 3
HK - Hong Kong 3
KR - Corea 3
TW - Taiwan 3
DZ - Algeria 2
EU - Europa 2
PE - Perù 2
AR - Argentina 1
CZ - Repubblica Ceca 1
HU - Ungheria 1
NL - Olanda 1
Totale 2.721
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Città #
Woodbridge 249
Fairfield 241
Chandler 204
Ann Arbor 193
Houston 166
Ashburn 111
Seattle 110
Wilmington 109
Cambridge 89
Udine 64
Dearborn 62
Jacksonville 61
Singapore 53
Boardman 40
Beijing 27
Princeton 24
Cervignano Del Friuli 21
Dublin 20
Izmir 17
Des Moines 14
Redmond 14
Brussels 13
Lappeenranta 12
Munich 12
San Diego 10
Cork 9
Modena 8
Nanjing 7
Pune 7
Dong Ket 6
Trieste 6
Norwalk 5
Vienna 5
Cagliari 4
Los Angeles 4
Redwood City 4
Shanghai 4
Warsaw 4
Xi'an 4
Bologna 3
Kraków 3
Nanchang 3
Ogden 3
Reading 3
Sapporo 3
Shenyang 3
Changsha 2
Chengdu 2
Frattamaggiore 2
Fremont 2
Graz 2
Grenoble 2
Gruaro 2
Hangzhou 2
Helsinki 2
Hyderabad 2
Kunming 2
Lima 2
Lund 2
Mcallen 2
Milan 2
Nanning 2
New York 2
Osaka 2
Rzeszów 2
Taipei 2
Taiyuan 2
Toronto 2
Wuhan 2
Zurich 2
Albuquerque 1
Baotou 1
Budapest 1
Castelfranco Veneto 1
Central 1
Central District 1
Fuzhou 1
Genoa 1
Hefei 1
Heverlee 1
Huaihua 1
Indiana 1
Jinan 1
Karlsruhe 1
Nuremberg 1
Nürnberg 1
Olomouc 1
Ottawa 1
Paris 1
Phoenix 1
Preganziol 1
Sacile 1
San Francisco 1
Santa Clara 1
Santa Fe 1
Shaoxing 1
Simi Valley 1
Spittal an der Drau 1
Taizhou 1
Tianjin 1
Totale 2.112
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Nome #
Improved surface roughness modeling and mobility projections in thin film MOSFETs 178
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 167
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 155
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 144
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 143
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 134
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections 132
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 131
The impact of interface states on the mobility and the drive current of III-V MOSFETs 128
Modeling approaches for band-structure calculation in III-V FET quantum wells 127
Performance evaluation of III-V compound semiconductor n-MOSFETs employing calibrated multi-valley and Multi-Subband Monte Carlo transport models 127
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 125
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 122
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 121
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 109
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 107
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 107
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 102
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: from advanced models for band structures, electrostatics and transport to TCAD 93
Modeling 1/f and Lorenzian noise in III-V MOSFETs 93
Relationship between capacitance and conductance in MOS capacitors 85
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 66
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-of-the-Roadmap III–V MOSFETs 60
The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in {MOS} Systems 31
Compact expression to model the effects of dielectric absorption on analog-to-digital converters 10
Physics-based TCAD analysis of Border and Interface traps in Al2O3/InGaAs stacks using Multifrequency CV-curves 10
Totale 2.807
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Categoria #
all - tutte 8.556
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.556
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020536 0 0 0 0 66 118 92 80 81 48 18 33
2020/2021382 10 47 20 59 16 41 27 38 35 22 36 31
2021/2022239 14 20 21 14 6 10 13 12 2 35 59 33
2022/2023388 28 51 5 72 31 91 1 35 52 4 8 10
2023/2024119 17 13 6 4 8 17 3 15 7 14 5 10
2024/2025117 6 30 24 27 30 0 0 0 0 0 0 0
Totale 2.807