CARUSO, Enrico
 Distribuzione geografica
Continente #
NA - Nord America 1.970
EU - Europa 506
AS - Asia 110
AF - Africa 11
Continente sconosciuto - Info sul continente non disponibili 2
SA - Sud America 2
Totale 2.601
Nazione #
US - Stati Uniti d'America 1.967
IT - Italia 145
UA - Ucraina 99
DE - Germania 70
CN - Cina 66
SE - Svezia 52
BE - Belgio 33
IE - Irlanda 31
GB - Regno Unito 25
FI - Finlandia 18
TR - Turchia 17
IN - India 10
MG - Madagascar 9
FR - Francia 7
PL - Polonia 7
AT - Austria 6
GR - Grecia 6
VN - Vietnam 6
CA - Canada 3
CH - Svizzera 3
JP - Giappone 3
KR - Corea 3
CZ - Repubblica Ceca 2
DZ - Algeria 2
EU - Europa 2
HK - Hong Kong 2
TW - Taiwan 2
AR - Argentina 1
HU - Ungheria 1
NL - Olanda 1
PE - Perù 1
SG - Singapore 1
Totale 2.601
Città #
Woodbridge 249
Fairfield 241
Chandler 203
Ann Arbor 193
Houston 166
Ashburn 111
Seattle 110
Wilmington 109
Cambridge 89
Dearborn 62
Jacksonville 61
Udine 61
Brussels 31
Beijing 27
Princeton 24
Cervignano Del Friuli 21
Dublin 20
Izmir 17
Boardman 15
Des Moines 14
Redmond 14
Munich 11
San Diego 10
Cork 9
Modena 8
Nanjing 7
Pune 7
Dong Ket 6
Trieste 6
Norwalk 5
Vienna 5
Cagliari 4
Redwood City 4
Warsaw 4
Bologna 3
Kraków 3
Nanchang 3
Ogden 3
Reading 3
Shenyang 3
Brno 2
Changsha 2
Chengdu 2
Frattamaggiore 2
Fremont 2
Grenoble 2
Gruaro 2
Hangzhou 2
Hyderabad 2
Kunming 2
Lund 2
Mcallen 2
Milan 2
Nanning 2
New York 2
Osaka 2
Taipei 2
Taiyuan 2
Toronto 2
Wuhan 2
Zurich 2
Albuquerque 1
Baotou 1
Budapest 1
Castelfranco Veneto 1
Central 1
Central District 1
Fuzhou 1
Graz 1
Hanover 1
Hefei 1
Helsinki 1
Heverlee 1
Indiana 1
Jinan 1
Karlsruhe 1
Lappeenranta 1
Lima 1
Nürnberg 1
Ottawa 1
Paris 1
Phoenix 1
Preganziol 1
Sacile 1
San Francisco 1
Santa Fe 1
Shaoxing 1
Simi Valley 1
Tianjin 1
Verona 1
Wenzhou 1
Zhengzhou 1
Totale 2.015
Nome #
Improved surface roughness modeling and mobility projections in thin film MOSFETs 174
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 163
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 151
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 140
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 140
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 133
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections 131
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 127
The impact of interface states on the mobility and the drive current of III-V MOSFETs 124
Modeling approaches for band-structure calculation in III-V FET quantum wells 123
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 121
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 118
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 118
Performance evaluation of III-V compound semiconductor n-MOSFETs employing calibrated multi-valley and Multi-Subband Monte Carlo transport models 115
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 106
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 105
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 101
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 96
Modeling 1/f and Lorenzian noise in III-V MOSFETs 90
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: from advanced models for band structures, electrostatics and transport to TCAD 89
Relationship between capacitance and conductance in MOS capacitors 82
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 58
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-of-the-Roadmap III–V MOSFETs 41
The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in {MOS} Systems 28
Physics-based TCAD analysis of Border and Interface traps in Al2O3/InGaAs stacks using Multifrequency CV-curves 10
Totale 2.684
Categoria #
all - tutte 6.343
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.343


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019200 0 0 0 0 0 0 0 0 2 32 90 76
2019/2020725 37 18 22 112 66 118 92 80 81 48 18 33
2020/2021382 10 47 20 59 16 41 27 38 35 22 36 31
2021/2022239 14 20 21 14 6 10 13 12 2 35 59 33
2022/2023396 28 51 5 72 31 91 2 37 53 5 11 10
2023/2024105 18 17 7 6 15 17 3 15 7 0 0 0
Totale 2.684