IRIS
CARUSO, Enrico
 Distribuzione geografica
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Continente #
NA - Nord America 2.071
EU - Europa 623
AS - Asia 360
SA - Sud America 45
AF - Africa 17
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
AN - Antartide 1
Totale 3.121
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Nazione #
US - Stati Uniti d'America 2.062
IT - Italia 160
CN - Cina 109
SG - Singapore 109
DE - Germania 103
UA - Ucraina 99
HK - Hong Kong 80
SE - Svezia 54
RU - Federazione Russa 46
BR - Brasile 35
FI - Finlandia 34
GB - Regno Unito 32
IE - Irlanda 31
TR - Turchia 18
BE - Belgio 15
FR - Francia 14
IN - India 10
MG - Madagascar 9
PL - Polonia 9
AT - Austria 8
CA - Canada 8
VN - Vietnam 7
GR - Grecia 6
JP - Giappone 6
KR - Corea 4
TW - Taiwan 4
CH - Svizzera 3
ZA - Sudafrica 3
AM - Armenia 2
AR - Argentina 2
CO - Colombia 2
CZ - Repubblica Ceca 2
DZ - Algeria 2
EC - Ecuador 2
EU - Europa 2
LT - Lituania 2
NL - Olanda 2
OM - Oman 2
PE - Perù 2
PK - Pakistan 2
AQ - Antartide 1
AU - Australia 1
AZ - Azerbaigian 1
BD - Bangladesh 1
BO - Bolivia 1
CI - Costa d'Avorio 1
ES - Italia 1
GE - Georgia 1
HU - Ungheria 1
ID - Indonesia 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
LU - Lussemburgo 1
MA - Marocco 1
MX - Messico 1
NZ - Nuova Zelanda 1
TN - Tunisia 1
VE - Venezuela 1
Totale 3.121
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Città #
Woodbridge 249
Fairfield 241
Chandler 204
Ann Arbor 193
Houston 166
Ashburn 113
Seattle 110
Wilmington 109
Cambridge 89
Hong Kong 74
Singapore 70
Udine 64
Dearborn 62
Jacksonville 61
Beijing 46
Boardman 40
Munich 27
Princeton 24
Cervignano Del Friuli 21
Dublin 20
Izmir 17
Des Moines 14
Los Angeles 14
Redmond 14
Brussels 13
Lappeenranta 12
San Diego 10
Cork 9
Trieste 9
Modena 8
Nanjing 7
Pune 7
Dong Ket 6
Düsseldorf 6
Frankfurt am Main 5
Norwalk 5
Parma 5
Vienna 5
Cagliari 4
New York 4
Nuremberg 4
Redwood City 4
Santa Clara 4
Shanghai 4
Warsaw 4
Xi'an 4
Bologna 3
Helsinki 3
Kraków 3
Nanchang 3
Ogden 3
Portsmouth 3
Reading 3
San Francisco 3
Sapporo 3
Shenyang 3
Toronto 3
Turku 3
Belo Horizonte 2
Changsha 2
Charlotte 2
Chengdu 2
Chicago 2
Denver 2
Florence 2
Frattamaggiore 2
Fremont 2
Graz 2
Grenoble 2
Gruaro 2
Hangzhou 2
Hefei 2
Hyderabad 2
Kunming 2
Lima 2
Lund 2
Manchester 2
Mcallen 2
Milan 2
Montreal 2
Nanning 2
Newark 2
Osaka 2
Porto Alegre 2
Rio de Janeiro 2
Rzeszów 2
Stockholm 2
Taipei 2
Taiyuan 2
Wuhan 2
Wuxi 2
Yerevan 2
Zurich 2
Albuquerque 1
Alton 1
Araraquara 1
Atlanta 1
Auckland 1
Baku 1
Baotou 1
Totale 2.294
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Nome #
Improved surface roughness modeling and mobility projections in thin film MOSFETs 199
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 180
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 168
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 164
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 160
Performance evaluation of III-V compound semiconductor n-MOSFETs employing calibrated multi-valley and Multi-Subband Monte Carlo transport models 151
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 151
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 148
The impact of interface states on the mobility and the drive current of III-V MOSFETs 146
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 142
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections 142
Modeling approaches for band-structure calculation in III-V FET quantum wells 138
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections 135
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 135
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 126
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 123
null 118
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 117
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: from advanced models for band structures, electrostatics and transport to TCAD 110
Modeling 1/f and Lorenzian noise in III-V MOSFETs 107
Relationship between capacitance and conductance in MOS capacitors 100
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 84
Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-of-the-Roadmap III–V MOSFETs 75
The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in {MOS} Systems 39
Compact expression to model the effects of dielectric absorption on analog-to-digital converters 36
Physics-based TCAD analysis of Border and Interface traps in Al2O3/InGaAs stacks using Multifrequency CV-curves 10
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 4
Totale 3.208
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Categoria #
all - tutte 10.465
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 10.465
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021382 10 47 20 59 16 41 27 38 35 22 36 31
2021/2022239 14 20 21 14 6 10 13 12 2 35 59 33
2022/2023388 28 51 5 72 31 91 1 35 52 4 8 10
2023/2024119 17 13 6 4 8 17 3 15 7 14 5 10
2024/2025480 6 30 24 27 34 33 38 48 41 35 54 110
2025/202638 38 0 0 0 0 0 0 0 0 0 0 0
Totale 3.208