This work demonstrates that when inelastic tunneling between oxide traps and semiconductor bands is considered, the traps with energy aligned to the semiconductor bandgap play a significant role in the frequency dispersion of the capacitance–voltage (C–V) and conductance–voltage(G–V ) characteristicsofmetal–oxide– semiconductor (MOS) systems. The work also highlights that a nonlocal model for tunneling into interface states is mandatory to reproduce experimentswhen carrier quantization in the inversion layer is accounted for. A model, including these ingredients, is used to evaluate the energy and depth distribution of oxide traps in a n-In0.53Ga0.47As/Al2O3 MOS system and is able to accurately fit the C–V frequency dispersion from depletion to weak inversion. The oxide trap distribution determined from theC–V response predicts the corresponding G–V dispersion with frequency

The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in {MOS} Systems

Enrico Caruso;Pierpaolo Palestri;David Esseni;
2020

Abstract

This work demonstrates that when inelastic tunneling between oxide traps and semiconductor bands is considered, the traps with energy aligned to the semiconductor bandgap play a significant role in the frequency dispersion of the capacitance–voltage (C–V) and conductance–voltage(G–V ) characteristicsofmetal–oxide– semiconductor (MOS) systems. The work also highlights that a nonlocal model for tunneling into interface states is mandatory to reproduce experimentswhen carrier quantization in the inversion layer is accounted for. A model, including these ingredients, is used to evaluate the energy and depth distribution of oxide traps in a n-In0.53Ga0.47As/Al2O3 MOS system and is able to accurately fit the C–V frequency dispersion from depletion to weak inversion. The oxide trap distribution determined from theC–V response predicts the corresponding G–V dispersion with frequency
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/1190247
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