| Nome |
# |
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Digital and analog TFET circuits: Design and benchmark, file e27ce0c5-7289-055e-e053-6605fe0a7873
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530
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A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces, file e27ce0c2-4af9-055e-e053-6605fe0a7873
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279
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An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation, file e27ce0c7-4770-055e-e053-6605fe0a7873
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221
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A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions, file e27ce0c7-43da-055e-e053-6605fe0a7873
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217
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Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain, file e27ce0c2-6573-055e-e053-6605fe0a7873
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216
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Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation, file e27ce0c7-476c-055e-e053-6605fe0a7873
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214
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Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions, file e27ce0c7-476a-055e-e053-6605fe0a7873
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189
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Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint, file e27ce0c2-8c38-055e-e053-6605fe0a7873
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169
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Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells, file e27ce0c2-6742-055e-e053-6605fe0a7873
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167
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Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET, file e27ce0c2-8ecd-055e-e053-6605fe0a7873
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134
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Design and Simulation of a 12 Gb/s Transceiver With 8-Tap FFE, Offset-Compensated Samplers and Fully Adaptive 1-Tap Speculative/3-Tap DFE and Sampling Phase for MIPI A-PHY Applications, file e27ce0c9-5129-055e-e053-6605fe0a7873
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130
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Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits, file e27ce0c3-b9d3-055e-e053-6605fe0a7873
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125
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A Simple Modelling Tool for Fast Combined Simulation of Interconnections, Inter-Symbol Interference and Equalization in High-Speed Serial Interfaces for Chip-to-Chip Communications, file e27ce0c7-6860-055e-e053-6605fe0a7873
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120
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The Electron–Hole Bilayer TFET: Dimensionality Effects and Optimization, file e27ce0c2-b17a-055e-e053-6605fe0a7873
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108
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A Novel Reconfigurable sub-0.25V Digital Logic Family Using the Electron-Hole Bilayer TFET, file e27ce0c4-edd4-055e-e053-6605fe0a7873
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102
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Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits, file e27ce0c2-bdc1-055e-e053-6605fe0a7873
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95
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A review of selected topics in physics based modeling for tunnel field-effect transistors, file e27ce0c7-9c21-055e-e053-6605fe0a7873
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93
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Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs, file e27ce0c5-13f2-055e-e053-6605fe0a7873
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92
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On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance, file e27ce0c7-892c-055e-e053-6605fe0a7873
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92
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Investigation of the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation, file e27ce0c7-43d8-055e-e053-6605fe0a7873
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72
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Dependability Assessment of Transfer Length Method to Extract the Metal–Graphene Contact Resistance, file e27ce0c8-c8d5-055e-e053-6605fe0a7873
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62
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Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization, file e27ce0c7-881d-055e-e053-6605fe0a7873
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57
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Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs, file e27ce0c3-2751-055e-e053-6605fe0a7873
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51
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Improved understanding of metal–graphene contacts, file e27ce0c7-a0b8-055e-e053-6605fe0a7873
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51
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Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating, file e27ce0c7-8462-055e-e053-6605fe0a7873
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47
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Systematic Modeling of Electrostatics, Transport, and Statistical Variability Effects of Interface Traps in End-of-the-Roadmap III–V MOSFETs, file e27ce0c7-6d17-055e-e053-6605fe0a7873
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44
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Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells, file e27ce0c2-0f40-055e-e053-6605fe0a7873
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42
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Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs, file e27ce0c9-ab1e-055e-e053-6605fe0a7873
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42
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General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors, file e27ce0c7-7f11-055e-e053-6605fe0a7873
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35
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General model and equivalent circuit for the chemical noise spectrum associated to surface charge fluctuation in potentiometric sensors, file e27ce0c9-4418-055e-e053-6605fe0a7873
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35
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Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection, file 38fab7b4-6378-4854-8834-9f639e0edb72
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33
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Multiscale simulation analysis of passive and active micro/nanoelectrodes for CMOS-based in vitro neural sensing devices, file e27ce0ca-34cc-055e-e053-6605fe0a7873
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33
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Monte-Carlo Simulation of Decananometric nMOSFETs: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections, file e27ce0c1-eb46-055e-e053-6605fe0a7873
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27
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Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes, file e27ce0c9-0bea-055e-e053-6605fe0a7873
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27
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On the experimental determination of channel back-scattering in nanoMOSFETs, file e27ce0c1-dfab-055e-e053-6605fe0a7873
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24
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Backscattering and common-base current gain of the Graphene Base Transistor (GBT), file e27ce0c9-7d83-055e-e053-6605fe0a7873
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23
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Sensitivity, noise and resolution in a beol-modified foundry-made isfet with miniaturized reference electrode for wearable point-of-care applications, file e27ce0c9-6021-055e-e053-6605fe0a7873
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17
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Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach, file e27ce0ca-112d-055e-e053-6605fe0a7873
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16
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Reproducing capacitive cyclic voltammetric curves by simulation: When are simplified geometries appropriate?, file e4068cb8-3f25-4a94-9c1c-8a4110ee47c5
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16
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Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects, file e27ce0c5-06f3-055e-e053-6605fe0a7873
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13
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Backscattering and common-base current gain of the Graphene Base Transistor (GBT), file e27ce0c2-29c9-055e-e053-6605fe0a7873
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12
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New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits, file e27ce0c5-4332-055e-e053-6605fe0a7873
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12
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Synchrotron Radiation Study of Gain, Noise, and Collection Efficiency of GaAs SAM-APDs with Staircase Structure, file e27ce0ca-30a3-055e-e053-6605fe0a7873
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12
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Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain, file e27ce0c7-ac04-055e-e053-6605fe0a7873
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9
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An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs, file e27ce0c2-b4ee-055e-e053-6605fe0a7873
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8
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Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes, file e27ce0c3-67b3-055e-e053-6605fe0a7873
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8
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Bidirectional modulation of neuronal excitability via ionic actuation of potassium, file e27ce0ca-31e4-055e-e053-6605fe0a7873
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8
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Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating, file e27ce0c5-7d72-055e-e053-6605fe0a7873
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7
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Experimental Characterization of Separate Absorption–Multiplication GaAs Staircase Avalanche Photodiodes under Continuous Laser Light Reveals Periodic Oscillations at High Gains, file 6084cda4-5a59-4a7f-a874-0907137c8496
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5
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Comprehensive Analysis of Graphene Geometric Diodes: Role of Geometrical Asymmetry and Electrostatic Effects, file 6dbf01f5-7a3b-4b01-8809-6d7e3350d478
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5
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On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices, file e27ce0c1-e7e2-055e-e053-6605fe0a7873
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5
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|
Modelling, simulation and design of the vertical Graphene Base Transistor, file e27ce0c1-f095-055e-e053-6605fe0a7873
|
5
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|
Backscattering and common-base current gain of the Graphene Base Transistor (GBT), file e27ce0c2-09ab-055e-e053-6605fe0a7873
|
5
|
|
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs, file e27ce0c2-29cb-055e-e053-6605fe0a7873
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5
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A Simple Simulation Approach for the Estimation of Convergence and Performance of Fully Adaptive Equalization in High-Speed Serial Interfaces, file e27ce0c7-4026-055e-e053-6605fe0a7873
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5
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Optimizing the Number of Steps and the Noise in Staircase APDs with Ternary III - V Semiconductor Alloys, file e27ce0c7-718b-055e-e053-6605fe0a7873
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5
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Accurate Nonlocal Impact Ionization Models for Conventional and Staircase Avalanche Photodiodes Derived by Full Band Monte Carlo Transport Simulations, file 1c4ec198-68f0-4024-844f-21aa7dc00848
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4
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Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs, file e27ce0c1-ee08-055e-e053-6605fe0a7873
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4
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Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs, file e27ce0c1-ef1e-055e-e053-6605fe0a7873
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4
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A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors, file e27ce0c1-f1a5-055e-e053-6605fe0a7873
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4
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On the extraction of the channel current in permeable gate oxide MOSFETs, file e27ce0c1-f3dc-055e-e053-6605fe0a7873
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4
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Improved surface roughness modeling and mobility projections in thin film MOSFETs, file e27ce0c2-4191-055e-e053-6605fe0a7873
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4
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Physics-based TCAD analysis of Border and Interface traps in Al2O3/InGaAs stacks using Multifrequency CV-curves, file e27ce0c5-3004-055e-e053-6605fe0a7873
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4
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General model for multiple surface reactions in ion-sensitive FETs, file e27ce0c5-c48c-055e-e053-6605fe0a7873
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4
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Improved understanding of metal–graphene contacts, file e27ce0c6-4bcc-055e-e053-6605fe0a7873
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4
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Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures, file f6725144-daf6-48fc-9c7a-b3ebd5dd4ca1
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4
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Study of gain, noise, and collection efficiency of GaAs SAM-APDs single pixel, file 4435a2d2-0310-4d53-84de-e3578430892b
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3
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Design of a 8-taps, 10Gbps transmitter for automotive micro-controllers, file e27ce0c3-0072-055e-e053-6605fe0a7873
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3
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On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance, file e27ce0c5-7e93-055e-e053-6605fe0a7873
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3
|
|
Semi-conducting Nanomaterials for Health, Environment and Security Applications, file e27ce0c5-c486-055e-e053-6605fe0a7873
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3
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|
Effects of p doping on GaAs/AlGaAs SAM-APDs for X-rays detection, file e27ce0c7-59d8-055e-e053-6605fe0a7873
|
3
|
|
Full-Band Monte Carlo simulations of GaAs p-i-n Avalanche PhotoDiodes: What Are the Limits of Nonlocal Impact Ionization Models?, file e27ce0c8-ef10-055e-e053-6605fe0a7873
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3
|
|
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits, file e27ce0c9-6d86-055e-e053-6605fe0a7873
|
3
|
|
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon, file e27ce0c9-f183-055e-e053-6605fe0a7873
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3
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|
Critical overview and comparison between models for adsorption-desorption noise in bio-chemical sensors, file 6f5298de-fe45-4af4-9eaf-2d2798129968
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2
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|
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain, file e27ce0c1-c819-055e-e053-6605fe0a7873
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2
|
|
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel, file e27ce0c1-e00a-055e-e053-6605fe0a7873
|
2
|
|
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers, file e27ce0c1-e93d-055e-e053-6605fe0a7873
|
2
|
|
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers, file e27ce0c1-ec4a-055e-e053-6605fe0a7873
|
2
|
|
The impact of interface states on the mobility and the drive current of III-V MOSFETs, file e27ce0c1-ef17-055e-e053-6605fe0a7873
|
2
|
|
Simulation of DC and RF Performance of the Graphene Base Transistor, file e27ce0c1-f230-055e-e053-6605fe0a7873
|
2
|
|
Performance of III-V nanoscale MOSFETs: a simulation study, file e27ce0c1-f598-055e-e053-6605fe0a7873
|
2
|
|
Modeling electrostatic doping and series resistance in graphene-FETs, file e27ce0c2-f62d-055e-e053-6605fe0a7873
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2
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Simulation Study of the Graphene Base Transistor, file e27ce0c3-cb6a-055e-e053-6605fe0a7873
|
2
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Detailed characterization and critical discussion of series resistance in graphene-metal contacts, file e27ce0c3-d728-055e-e053-6605fe0a7873
|
2
|
|
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes, file e27ce0c3-eedd-055e-e053-6605fe0a7873
|
2
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|
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: from advanced models for band structures, electrostatics and transport to TCAD, file e27ce0c4-f282-055e-e053-6605fe0a7873
|
2
|
|
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials, file e27ce0c5-5d46-055e-e053-6605fe0a7873
|
2
|
|
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions, file e27ce0c7-5768-055e-e053-6605fe0a7873
|
2
|
|
The Electron–Hole Bilayer TFET: Dimensionality Effects and Optimization, file e27ce0c7-72f1-055e-e053-6605fe0a7873
|
2
|
|
General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors, file e27ce0c7-7f10-055e-e053-6605fe0a7873
|
2
|
|
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation, file e27ce0c7-9077-055e-e053-6605fe0a7873
|
2
|
|
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions, file e27ce0c7-922b-055e-e053-6605fe0a7873
|
2
|
|
Investigating the correlation between interface and dielectric trap densities in aged p-MOSFETs using current-voltage, charge pumping, and 1/f noise characterization techniques, file 19e12d35-0590-4190-a5be-17b8a2d88ac0
|
1
|
|
A simulation study of FET-based nanoelectrodes for active intracellular neural recordings, file 2acfb099-2c4e-4bbc-9c20-f3f3df6d1cd7
|
1
|
|
Editorial: Selected papers from the 8th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2022), file 428e50db-d7ae-4db0-8c7c-e1bd9c7234a1
|
1
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|
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications, file 43f0ff3c-430c-424c-9a48-93e4bf0e3ed2
|
1
|
|
Multiphysics Finite-Element Modeling of the Neuron/Electrode Electrodiffusive Interaction, file 5cba1a40-61a9-44e5-b6cf-4220145a80c3
|
1
|
|
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs, file c8cdfe1a-3375-4797-97d3-2f19bb725ac8
|
1
|
|
A Time-Domain Simulation Framework for the Modeling of Jitter in High-Speed Serial Interfaces, file db9eaf62-c082-435c-8a2d-e3f99a289c52
|
1
|
| Totale |
4.285 |