IRIS
PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 24.187
EU - Europa 5.612
AS - Asia 3.363
SA - Sud America 471
AF - Africa 46
Continente sconosciuto - Info sul continente non disponibili 12
OC - Oceania 3
Totale 33.694
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Nazione #
US - Stati Uniti d'America 24.026
SG - Singapore 1.815
UA - Ucraina 1.569
IT - Italia 993
DE - Germania 929
CN - Cina 923
FI - Finlandia 528
RU - Federazione Russa 522
BR - Brasile 427
IE - Irlanda 337
SE - Svezia 221
TR - Turchia 201
CA - Canada 133
GB - Regno Unito 120
FR - Francia 110
IN - India 80
KR - Corea 69
HK - Hong Kong 63
AT - Austria 58
VN - Vietnam 42
CZ - Repubblica Ceca 32
CH - Svizzera 30
NL - Olanda 29
BE - Belgio 28
BD - Bangladesh 24
PL - Polonia 24
JP - Giappone 21
MX - Messico 18
GR - Grecia 16
ES - Italia 15
TG - Togo 14
TW - Taiwan 13
UZ - Uzbekistan 12
RO - Romania 11
EU - Europa 10
ZA - Sudafrica 10
AM - Armenia 9
AR - Argentina 9
IQ - Iraq 9
PK - Pakistan 9
EC - Ecuador 8
GE - Georgia 8
PE - Perù 8
IL - Israele 7
JO - Giordania 7
KG - Kirghizistan 7
PH - Filippine 7
VE - Venezuela 7
LA - Repubblica Popolare Democratica del Laos 6
MA - Marocco 6
AE - Emirati Arabi Uniti 5
AZ - Azerbaigian 5
EG - Egitto 5
IR - Iran 4
LT - Lituania 4
LV - Lettonia 4
PA - Panama 4
RS - Serbia 4
BG - Bulgaria 3
BO - Bolivia 3
CL - Cile 3
CO - Colombia 3
DK - Danimarca 3
KZ - Kazakistan 3
LU - Lussemburgo 3
NO - Norvegia 3
NZ - Nuova Zelanda 3
TN - Tunisia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BH - Bahrain 2
CI - Costa d'Avorio 2
EE - Estonia 2
HR - Croazia 2
HU - Ungheria 2
ID - Indonesia 2
KE - Kenya 2
LK - Sri Lanka 2
OM - Oman 2
PT - Portogallo 2
SK - Slovacchia (Repubblica Slovacca) 2
TH - Thailandia 2
UY - Uruguay 2
AL - Albania 1
BA - Bosnia-Erzegovina 1
BN - Brunei Darussalam 1
BY - Bielorussia 1
CG - Congo 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
JM - Giamaica 1
LI - Liechtenstein 1
MK - Macedonia 1
NG - Nigeria 1
NI - Nicaragua 1
NP - Nepal 1
PR - Porto Rico 1
PY - Paraguay 1
SA - Arabia Saudita 1
SI - Slovenia 1
Totale 33.691
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Città #
Woodbridge 3.307
Fairfield 3.024
Houston 2.192
Ann Arbor 1.934
Ashburn 1.392
Chandler 1.297
Seattle 1.257
Wilmington 1.164
Jacksonville 1.035
Cambridge 1.022
Singapore 930
Dearborn 678
Boardman 435
Udine 417
Beijing 402
Dublin 324
Princeton 321
Izmir 186
San Diego 150
Ottawa 103
Ogden 77
Des Moines 73
New York 68
Munich 60
Hong Kong 59
Seoul 59
Los Angeles 57
Hefei 54
Nanjing 53
Milan 51
Norwalk 48
Düsseldorf 42
Helsinki 42
Redmond 40
Vienna 40
Kunming 39
Guangzhou 38
Dong Ket 34
Santa Clara 32
Grafing 30
Simi Valley 29
Brno 28
Nuremberg 28
Brussels 27
Trieste 27
Frankfurt am Main 26
Modena 24
Rome 24
Cervignano Del Friuli 21
Jinan 21
San Mateo 21
Hangzhou 20
São Paulo 20
Chengdu 19
Nanchang 19
Indiana 18
Portsmouth 18
Zurich 18
Lappeenranta 17
Arezzo 16
Falls Church 16
Lauterbourg 15
Toronto 15
Warsaw 15
Lomé 14
Phoenix 14
Pune 14
Redwood City 14
San Francisco 14
Shanghai 14
Shenyang 14
Belo Horizonte 13
Bologna 13
Wuhan 13
Chennai 12
Hebei 12
Rio de Janeiro 12
Amsterdam 11
Dallas 11
Fuzhou 11
Xi'an 11
Brooklyn 9
Changsha 9
Codroipo 9
Dhaka 9
Hyderabad 9
London 9
Montreal 9
Stockholm 9
Tashkent 9
Yerevan 9
Zhengzhou 9
Andover 8
Barcelona 8
Horia 8
Bengaluru 7
Bishkek 7
Cork 7
San Michele al Tagliamento 7
Tbilisi 7
Totale 23.443
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Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.634
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 201
Improved surface roughness modeling and mobility projections in thin film MOSFETs 191
Modeling charge collection in x-ray imagers 182
A better understanding of the low-field mobility in Graphene Nano-ribbons 180
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 179
Physics-Based and Compact Models for Self-Heating in High-Speed Bipolar Integrated Circuits 178
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 177
Early assessment of tunnel-FET for energy-efficient logic circuits 169
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 169
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 167
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 165
A review of selected topics in physics based modeling for tunnel field-effect transistors 165
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 164
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 163
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 158
Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations 158
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 157
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 155
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 155
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 155
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 154
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 154
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 154
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 153
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 153
Semi-analytic Modeling for Hot Carriers in Electron Devices 152
Total Ionizing Dose Effects in Si-Based Tunnel FETs 152
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 150
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 149
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 147
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 147
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 146
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 145
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 145
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 143
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 143
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 142
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 142
Experimental characterization of the Static Noise Margins of strained Silicon complementary Tunnel-FET SRAM 141
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 141
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 141
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 140
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 140
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 140
Simulation of nano-biosensors based on conventional TCAD 138
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 138
The impact of interface states on the mobility and the drive current of III-V MOSFETs 138
A design methodology for MOS Current-Mode Logic Frequency Dividers 137
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections 137
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 136
Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices 135
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 135
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 135
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 135
Performance analysis of different SRAM cell topologies employing tunnel-FETs 135
Sensitivity of Silicon Nanowire Biochemical Sensors 134
Modeling approaches for band-structure calculation in III-V FET quantum wells 134
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 133
Technology Computer Aided Design 132
System and transistor level analysis of an 8-taps FFE 10Gbps serial link transmitter with realistic channels and supply parasitics 132
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 132
Design of a half-rate receiver for a 10Gbps automotive serial interface with 1-tap-unrolled 4-taps DFE and custom CDR algorithm 131
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 130
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 130
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 129
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 129
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 128
Simulation of DC and RF Performance of the Graphene Base Transistor 128
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 128
Improved understanding of metal–graphene contacts 128
Efficient Quantum Mechanical Simulation of Band-to-band Tunneling 127
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 126
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 126
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 126
Theory of Motion at the band crossing points in bulk semiconductor crystals and in inversion layers 126
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 126
On the experimental determination of channel back-scattering in nanoMOSFETs 125
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 125
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 125
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 125
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 125
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 125
Design and characterization of a 9.2Gbps transceiver for automotive microcontroller applications with 8-taps FFE and 1-tap unrolled/4-taps DFE 125
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 124
Digital and analog TFET circuits: Design and benchmark 124
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 124
Technology Oriented Analytical Models of MOSFETs in the Quasi Ballistic Regime 123
Non-local microscopic view of signal propagation times in BJTs biased up to high currents 122
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 122
Sub-mW multi-Gbps chip-to-chip communication Links for Ultra-Low Power IoT end-nodes 121
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 121
Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering 120
Multi-Subband Semi-classical Simulation of n-type Tunnel-FETs 120
Monte-Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs 120
Design and implementation of switched coil LC-VCOs in the GHz range using the self-inductance technique 120
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 120
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 120
Monte-Carlo simulation of MOSFETs with band offsets in the source and drain 119
Simulation of the Performance of Graphene FETs With a Semiclassical Model, Including Band-to-Band Tunneling 119
Totale 15.564
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Categoria #
all - tutte 117.650
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 117.650
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020708 0 0 0 0 0 0 0 0 0 0 200 508
2020/20214.466 132 571 169 603 265 591 232 464 539 205 456 239
2021/20222.628 150 217 95 115 34 162 179 113 32 462 671 398
2022/20232.859 348 339 31 385 233 720 33 210 342 37 78 103
2023/20241.129 147 80 25 23 145 153 17 93 141 59 37 209
2024/20255.843 1.477 563 310 165 184 293 394 337 620 696 804 0
Totale 34.348