IRIS
PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 30.495
AS - Asia 10.037
EU - Europa 6.862
SA - Sud America 2.101
Continente sconosciuto - Info sul continente non disponibili 679
AF - Africa 239
OC - Oceania 9
AN - Antartide 1
Totale 50.423
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Nazione #
US - Stati Uniti d'America 29.980
SG - Singapore 4.906
CN - Cina 1.995
BR - Brasile 1.600
UA - Ucraina 1.592
IT - Italia 1.336
DE - Germania 1.031
HK - Hong Kong 985
VN - Vietnam 810
FI - Finlandia 577
RU - Federazione Russa 569
FR - Francia 461
IE - Irlanda 347
CA - Canada 271
IN - India 255
TR - Turchia 242
GB - Regno Unito 241
SE - Svezia 241
AR - Argentina 182
BD - Bangladesh 151
IQ - Iraq 96
MX - Messico 95
CO - Colombia 80
EC - Ecuador 77
KR - Corea 77
AT - Austria 73
ZA - Sudafrica 69
JP - Giappone 67
PL - Polonia 67
ID - Indonesia 62
NL - Olanda 59
PK - Pakistan 53
VE - Venezuela 50
ES - Italia 42
CH - Svizzera 38
MA - Marocco 34
SA - Arabia Saudita 34
CZ - Repubblica Ceca 33
PH - Filippine 33
CL - Cile 32
BE - Belgio 31
UZ - Uzbekistan 31
PY - Paraguay 30
KE - Kenya 27
TW - Taiwan 26
LT - Lituania 24
JO - Giordania 21
AE - Emirati Arabi Uniti 20
IL - Israele 20
MY - Malesia 20
JM - Giamaica 19
CR - Costa Rica 18
BO - Bolivia 17
GR - Grecia 17
PE - Perù 17
TT - Trinidad e Tobago 17
TG - Togo 16
TN - Tunisia 16
RO - Romania 15
DO - Repubblica Dominicana 14
EG - Egitto 14
UY - Uruguay 14
AZ - Azerbaigian 13
DZ - Algeria 13
KZ - Kazakistan 13
AM - Armenia 12
OM - Oman 12
NI - Nicaragua 11
SV - El Salvador 11
EU - Europa 10
GE - Georgia 10
HN - Honduras 10
NP - Nepal 10
TH - Thailandia 10
PA - Panama 9
PR - Porto Rico 8
RS - Serbia 8
BG - Bulgaria 7
KG - Kirghizistan 7
LA - Repubblica Popolare Democratica del Laos 7
LB - Libano 7
PS - Palestinian Territory 7
BH - Bahrain 6
DK - Danimarca 6
ET - Etiopia 6
GT - Guatemala 6
LY - Libia 6
CW - ???statistics.table.value.countryCode.CW??? 5
EE - Estonia 5
IR - Iran 5
XK - ???statistics.table.value.countryCode.XK??? 5
AL - Albania 4
AO - Angola 4
AU - Australia 4
BB - Barbados 4
LV - Lettonia 4
NZ - Nuova Zelanda 4
PT - Portogallo 4
SC - Seychelles 4
SI - Slovenia 4
Totale 49.668
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Città #
Woodbridge 3.307
Fairfield 3.027
Ashburn 2.333
Houston 2.224
Ann Arbor 1.934
Singapore 1.793
Chandler 1.298
Seattle 1.272
Wilmington 1.165
San Jose 1.073
Jacksonville 1.042
Cambridge 1.023
Hong Kong 977
Beijing 968
Dearborn 678
Council Bluffs 510
Boardman 450
Udine 420
Dublin 331
Princeton 325
Lauterbourg 307
Los Angeles 305
Ho Chi Minh City 244
Santa Clara 205
Izmir 190
Hanoi 173
New York 167
San Diego 156
Buffalo 151
São Paulo 148
Dallas 147
Milan 142
Munich 120
Hefei 116
Ottawa 105
Redondo Beach 103
Des Moines 78
Ogden 77
The Dalles 75
Helsinki 70
Phoenix 63
Seoul 61
Atlanta 56
Nanjing 56
North Bergen 56
Orem 54
Warsaw 54
Frankfurt am Main 52
Chicago 50
Norwalk 50
Tokyo 49
Denver 48
Brooklyn 45
Vienna 45
Guangzhou 44
Chennai 43
Rio de Janeiro 43
Düsseldorf 42
Kunming 41
Redmond 41
Rome 40
Baghdad 38
Montreal 38
Miano 37
Nuremberg 37
Da Nang 36
Brasília 34
Dong Ket 34
Mumbai 34
Johannesburg 33
Amsterdam 32
Toronto 32
Modena 31
Shanghai 31
Trieste 31
Grafing 30
London 30
Simi Valley 29
Stockholm 29
Brno 28
Brussels 28
Belo Horizonte 27
Haiphong 27
Dhaka 26
Guayaquil 26
Lappeenranta 26
Nairobi 26
Tashkent 25
Bogotá 23
Boston 23
Hangzhou 23
Quito 23
San Francisco 23
Campinas 22
Chengdu 22
Manchester 22
Mexico City 22
Newark 22
Cervignano Del Friuli 21
Jinan 21
Totale 31.364
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Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.677
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 292
Physics-Based and Compact Models for Self-Heating in High-Speed Bipolar Integrated Circuits 287
Improved surface roughness modeling and mobility projections in thin film MOSFETs 245
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 242
A better understanding of the low-field mobility in Graphene Nano-ribbons 241
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 232
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 231
A review of selected topics in physics based modeling for tunnel field-effect transistors 231
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 228
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 225
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 222
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 222
Modeling charge collection in x-ray imagers 222
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 220
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 217
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 214
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 213
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 210
Total Ionizing Dose Effects in Si-Based Tunnel FETs 209
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 208
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 208
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 208
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 206
Early assessment of tunnel-FET for energy-efficient logic circuits 205
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 203
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 203
A design methodology for MOS Current-Mode Logic Frequency Dividers 202
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 202
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 201
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 198
Semi-analytic Modeling for Hot Carriers in Electron Devices 198
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 198
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 198
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 197
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 197
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 196
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 195
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 194
Improved understanding of metal–graphene contacts 194
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 193
Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations 193
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 192
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 192
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 191
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 190
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 190
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 189
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 189
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 189
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 188
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 188
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 187
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 187
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 187
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 185
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 184
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 183
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 183
Sensitivity of Silicon Nanowire Biochemical Sensors 183
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 182
The impact of interface states on the mobility and the drive current of III-V MOSFETs 182
Simulation of nano-biosensors based on conventional TCAD 181
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 180
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 180
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 179
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 179
On the experimental determination of channel back-scattering in nanoMOSFETs 178
Simulation of DC and RF Performance of the Graphene Base Transistor 178
Experimental characterization of the Static Noise Margins of strained Silicon complementary Tunnel-FET SRAM 178
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 177
Non-local microscopic view of signal propagation times in BJTs biased up to high currents 176
Theory of Motion at the band crossing points in bulk semiconductor crystals and in inversion layers 176
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 176
Design of a half-rate receiver for a 10Gbps automotive serial interface with 1-tap-unrolled 4-taps DFE and custom CDR algorithm 176
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 175
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 175
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 175
A simple and fast tool for the modelling of inter-symbol interference and equalization in high-speed chip-to-chip interfaces 175
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 172
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 172
Modeling approaches for band-structure calculation in III-V FET quantum wells 171
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations 170
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections 170
Design and implementation of switched coil LC-VCOs in the GHz range using the self-inductance technique 169
Performance analysis of different SRAM cell topologies employing tunnel-FETs 169
An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations 168
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 168
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 168
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 167
Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices 167
Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model 167
Technology Computer Aided Design 166
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 166
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 166
System and transistor level analysis of an 8-taps FFE 10Gbps serial link transmitter with realistic channels and supply parasitics 166
Simulation of the Performance of Graphene FETs With a Semiclassical Model, Including Band-to-Band Tunneling 165
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 165
Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering 164
A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs 164
Totale 20.752
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Categoria #
all - tutte 179.883
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 179.883
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.051 0 0 0 0 34 162 179 113 32 462 671 398
2022/20232.859 348 339 31 385 233 720 33 210 342 37 78 103
2023/20241.129 147 80 25 23 145 153 17 93 141 59 37 209
2024/20257.743 1.477 563 310 165 184 293 394 337 620 696 882 1.822
2025/202611.033 688 1.187 1.029 1.423 1.872 818 1.157 325 748 924 593 269
2026/20273.142 254 761 916 1.168 43 0 0 0 0 0 0 0
Totale 50.423