IRIS
PALESTRI, Pierpaolo
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 28.077
AS - Asia 9.940
EU - Europa 6.529
SA - Sud America 2.043
AF - Africa 233
Continente sconosciuto - Info sul continente non disponibili 16
OC - Oceania 6
AN - Antartide 1
Totale 46.845
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 27.708
SG - Singapore 4.888
CN - Cina 1.979
UA - Ucraina 1.592
BR - Brasile 1.581
IT - Italia 1.062
DE - Germania 1.027
HK - Hong Kong 975
VN - Vietnam 804
FI - Finlandia 576
RU - Federazione Russa 562
FR - Francia 458
IE - Irlanda 346
IN - India 246
TR - Turchia 242
SE - Svezia 241
CA - Canada 210
GB - Regno Unito 210
AR - Argentina 175
BD - Bangladesh 145
IQ - Iraq 95
MX - Messico 88
KR - Corea 75
AT - Austria 73
EC - Ecuador 72
ZA - Sudafrica 69
CO - Colombia 66
PL - Polonia 66
JP - Giappone 65
ID - Indonesia 60
NL - Olanda 58
PK - Pakistan 52
ES - Italia 41
VE - Venezuela 40
CH - Svizzera 38
MA - Marocco 34
CZ - Repubblica Ceca 33
SA - Arabia Saudita 32
BE - Belgio 31
CL - Cile 31
UZ - Uzbekistan 31
PH - Filippine 30
PY - Paraguay 30
KE - Kenya 25
TW - Taiwan 23
JO - Giordania 21
AE - Emirati Arabi Uniti 20
LT - Lituania 20
GR - Grecia 17
BO - Bolivia 16
MY - Malesia 16
PE - Perù 16
TG - Togo 16
TN - Tunisia 16
IL - Israele 15
DO - Repubblica Dominicana 14
EG - Egitto 14
RO - Romania 14
UY - Uruguay 14
AZ - Azerbaigian 13
DZ - Algeria 13
KZ - Kazakistan 13
OM - Oman 12
AM - Armenia 11
EU - Europa 10
GE - Georgia 10
JM - Giamaica 10
NP - Nepal 9
PA - Panama 9
TH - Thailandia 9
TT - Trinidad e Tobago 8
BG - Bulgaria 7
KG - Kirghizistan 7
LA - Repubblica Popolare Democratica del Laos 7
RS - Serbia 7
BH - Bahrain 6
ET - Etiopia 6
LB - Libano 6
LY - Libia 6
DK - Danimarca 5
IR - Iran 5
NI - Nicaragua 5
PS - Palestinian Territory 5
SV - El Salvador 5
AL - Albania 4
AO - Angola 4
CR - Costa Rica 4
LV - Lettonia 4
NZ - Nuova Zelanda 4
PT - Portogallo 4
SI - Slovenia 4
SN - Senegal 4
SY - Repubblica araba siriana 4
XK - ???statistics.table.value.countryCode.XK??? 4
ZW - Zimbabwe 4
BY - Bielorussia 3
CG - Congo 3
CI - Costa d'Avorio 3
EE - Estonia 3
GT - Guatemala 3
Totale 46.777
Salva come PNG Salva come JPEG
Città #
Woodbridge 3.307
Fairfield 3.026
Houston 2.214
Ashburn 1.964
Ann Arbor 1.934
Singapore 1.781
Chandler 1.297
Seattle 1.268
Wilmington 1.164
Jacksonville 1.039
Cambridge 1.022
Hong Kong 967
Beijing 961
Dearborn 678
San Jose 670
Boardman 450
Udine 420
Dublin 330
Princeton 321
Lauterbourg 307
Los Angeles 295
Ho Chi Minh City 243
Council Bluffs 240
Izmir 190
Hanoi 172
New York 153
San Diego 153
Buffalo 147
Santa Clara 143
São Paulo 142
Dallas 133
Munich 120
Hefei 116
Ottawa 104
Redondo Beach 103
Des Moines 78
Ogden 77
The Dalles 75
Helsinki 69
Seoul 61
Milan 58
Nanjing 56
Warsaw 54
Orem 52
Frankfurt am Main 50
Norwalk 49
Tokyo 48
Atlanta 46
Vienna 45
Guangzhou 44
Chennai 43
Rio de Janeiro 43
Denver 42
Düsseldorf 42
Kunming 41
Redmond 40
Baghdad 37
Nuremberg 37
Phoenix 37
Da Nang 36
Brooklyn 35
Dong Ket 34
Mumbai 34
Johannesburg 33
Amsterdam 32
Brasília 30
Grafing 30
Rome 30
Chicago 29
London 29
Shanghai 29
Simi Valley 29
Stockholm 29
Trieste 29
Brno 28
Brussels 28
Montreal 28
Belo Horizonte 27
Dhaka 26
Haiphong 26
Lappeenranta 26
Tashkent 25
Modena 24
Nairobi 24
Hangzhou 23
Boston 22
Campinas 22
Chengdu 22
Guayaquil 22
Quito 22
Toronto 22
Cervignano Del Friuli 21
Jinan 21
Poplar 21
San Mateo 21
Mexico City 20
Porto Alegre 20
Salvador 20
San Francisco 20
Bogotá 19
Totale 29.866
Salva come PNG Salva come JPEG
Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.670
Physics-Based and Compact Models for Self-Heating in High-Speed Bipolar Integrated Circuits 277
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 273
Improved surface roughness modeling and mobility projections in thin film MOSFETs 239
A better understanding of the low-field mobility in Graphene Nano-ribbons 227
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 226
A review of selected topics in physics based modeling for tunnel field-effect transistors 226
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 220
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 220
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 218
Modeling charge collection in x-ray imagers 218
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 215
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 214
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 211
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 209
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 202
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 201
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 201
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 199
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 199
Early assessment of tunnel-FET for energy-efficient logic circuits 197
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 196
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 196
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 195
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 194
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 193
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 193
A design methodology for MOS Current-Mode Logic Frequency Dividers 192
Semi-analytic Modeling for Hot Carriers in Electron Devices 191
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 191
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 191
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 190
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 190
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 188
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 188
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 188
Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations 187
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 186
Total Ionizing Dose Effects in Si-Based Tunnel FETs 186
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 183
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 183
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 183
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 182
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 182
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 181
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 181
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 181
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 181
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 180
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 180
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 180
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 178
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 178
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 177
Simulation of nano-biosensors based on conventional TCAD 176
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 176
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 175
Improved understanding of metal–graphene contacts 175
The impact of interface states on the mobility and the drive current of III-V MOSFETs 174
On the experimental determination of channel back-scattering in nanoMOSFETs 172
Sensitivity of Silicon Nanowire Biochemical Sensors 172
Experimental characterization of the Static Noise Margins of strained Silicon complementary Tunnel-FET SRAM 172
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 172
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 171
Simulation of DC and RF Performance of the Graphene Base Transistor 170
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 170
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 170
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 170
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 170
A simple and fast tool for the modelling of inter-symbol interference and equalization in high-speed chip-to-chip interfaces 170
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 169
Design of a half-rate receiver for a 10Gbps automotive serial interface with 1-tap-unrolled 4-taps DFE and custom CDR algorithm 168
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 168
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 167
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 167
Non-local microscopic view of signal propagation times in BJTs biased up to high currents 166
Modeling approaches for band-structure calculation in III-V FET quantum wells 166
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 166
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 166
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections 166
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 165
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 165
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 164
An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations 164
Theory of Motion at the band crossing points in bulk semiconductor crystals and in inversion layers 163
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 162
Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices 162
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 162
Performance analysis of different SRAM cell topologies employing tunnel-FETs 162
Technology Computer Aided Design 161
Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering 160
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 160
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 160
Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model 160
System and transistor level analysis of an 8-taps FFE 10Gbps serial link transmitter with realistic channels and supply parasitics 159
Design and characterization of a 9.2Gbps transceiver for automotive microcontroller applications with 8-taps FFE and 1-tap unrolled/4-taps DFE 159
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations 158
Technology Oriented Analytical Models of MOSFETs in the Quasi Ballistic Regime 158
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 157
Design and implementation of switched coil LC-VCOs in the GHz range using the self-inductance technique 157
Totale 19.849
Salva come PNG Salva come JPEG
Categoria #
all - tutte 166.668
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 166.668
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.628 150 217 95 115 34 162 179 113 32 462 671 398
2022/20232.859 348 339 31 385 233 720 33 210 342 37 78 103
2023/20241.129 147 80 25 23 145 153 17 93 141 59 37 209
2024/20257.743 1.477 563 310 165 184 293 394 337 620 696 882 1.822
2025/202611.033 688 1.187 1.029 1.423 1.872 818 1.157 325 748 924 593 269
2026/2027221 221 0 0 0 0 0 0 0 0 0 0 0
Totale 47.502