IRIS
PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 21.768
EU - Europa 4.633
AS - Asia 1.175
AF - Africa 16
Continente sconosciuto - Info sul continente non disponibili 12
SA - Sud America 5
Totale 27.609
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Nazione #
US - Stati Uniti d'America 21.644
UA - Ucraina 1.561
IT - Italia 908
CN - Cina 832
DE - Germania 788
FI - Finlandia 503
IE - Irlanda 337
SE - Svezia 212
TR - Turchia 191
CA - Canada 119
GB - Regno Unito 93
IN - India 55
FR - Francia 45
VN - Vietnam 35
AT - Austria 33
RU - Federazione Russa 32
BE - Belgio 27
CH - Svizzera 22
JP - Giappone 17
TG - Togo 14
GR - Grecia 12
PL - Polonia 11
RO - Romania 11
EU - Europa 10
KR - Corea 10
NL - Olanda 10
ES - Italia 9
TW - Taiwan 9
SG - Singapore 6
BD - Bangladesh 5
HK - Hong Kong 4
PH - Filippine 4
BG - Bulgaria 3
MX - Messico 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AM - Armenia 2
CL - Cile 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
EE - Estonia 2
HU - Ungheria 2
IR - Iran 2
PE - Perù 2
RS - Serbia 2
BA - Bosnia-Erzegovina 1
BN - Brunei Darussalam 1
BR - Brasile 1
DZ - Algeria 1
EG - Egitto 1
HR - Croazia 1
LI - Liechtenstein 1
LU - Lussemburgo 1
MK - Macedonia 1
NO - Norvegia 1
PA - Panama 1
PK - Pakistan 1
PR - Porto Rico 1
TH - Thailandia 1
Totale 27.609
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Città #
Woodbridge 3.307
Fairfield 3.024
Houston 2.192
Ann Arbor 1.934
Ashburn 1.380
Chandler 1.297
Seattle 1.254
Wilmington 1.164
Jacksonville 1.035
Cambridge 1.022
Dearborn 678
Udine 406
Beijing 386
Dublin 324
Princeton 319
Izmir 186
San Diego 149
Ottawa 102
Ogden 77
Des Moines 73
New York 60
Boardman 54
Hefei 54
Nanjing 52
Norwalk 48
Milan 41
Redmond 40
Kunming 39
Dong Ket 34
Guangzhou 33
Grafing 30
Simi Valley 29
Helsinki 27
Brussels 26
Munich 24
Trieste 24
Vienna 24
Modena 23
Rome 22
Cervignano Del Friuli 21
Jinan 21
San Mateo 21
Chengdu 19
Hangzhou 19
Nanchang 19
Indiana 18
Falls Church 16
Zurich 15
Lomé 14
Pune 14
Redwood City 14
Shenyang 14
Bologna 13
Wuhan 13
Hebei 12
Los Angeles 12
Toronto 11
Fuzhou 10
Arezzo 9
Changsha 9
Zhengzhou 9
Andover 8
Barcelona 8
Codroipo 8
Horia 8
Lappeenranta 8
Bengaluru 7
Cork 7
Phoenix 7
San Francisco 7
Shanghai 7
Baotou 6
Martignacco 6
Pesaro 6
Scafati 6
Warsaw 6
Amsterdam 5
Duncan 5
Fremont 5
London 5
Palaiseau 5
Shaoxing 5
Yellow Springs 5
Auburn Hills 4
Bangalore 4
Belforte del Chienti 4
Catania 4
Chongqing 4
Edinburgh 4
Kocaeli 4
Kraków 4
Montreal 4
Mountain View 4
Nanning 4
Osaka 4
Quzhou 4
Saint Petersburg 4
Taipei 4
Tappahannock 4
Xi'an 4
Totale 21.524
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Nome #
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 184
Improved surface roughness modeling and mobility projections in thin film MOSFETs 171
Modeling charge collection in x-ray imagers 170
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 163
Early assessment of tunnel-FET for energy-efficient logic circuits 160
A better understanding of the low-field mobility in Graphene Nano-ribbons 156
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 156
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 155
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 153
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 151
A review of selected topics in physics based modeling for tunnel field-effect transistors 151
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 148
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 146
Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations 146
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 145
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 143
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 142
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 140
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 140
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 139
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 138
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 138
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 138
Total Ionizing Dose Effects in Si-Based Tunnel FETs 138
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 137
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 137
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 135
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 133
Experimental characterization of the Static Noise Margins of strained Silicon complementary Tunnel-FET SRAM 130
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 130
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 129
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 129
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 129
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 128
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 128
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 127
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 127
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections 126
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 125
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 125
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 125
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 124
The impact of interface states on the mobility and the drive current of III-V MOSFETs 124
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 124
Performance analysis of different SRAM cell topologies employing tunnel-FETs 124
Modeling approaches for band-structure calculation in III-V FET quantum wells 123
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 123
Simulation of nano-biosensors based on conventional TCAD 122
Semi-analytic Modeling for Hot Carriers in Electron Devices 122
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 122
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 122
Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices 121
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 121
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 121
Technology Computer Aided Design 120
Efficient Quantum Mechanical Simulation of Band-to-band Tunneling 119
Sensitivity of Silicon Nanowire Biochemical Sensors 119
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 119
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 119
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 118
Design of a half-rate receiver for a 10Gbps automotive serial interface with 1-tap-unrolled 4-taps DFE and custom CDR algorithm 118
A design methodology for MOS Current-Mode Logic Frequency Dividers 117
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 116
Simulation of DC and RF Performance of the Graphene Base Transistor 116
System and transistor level analysis of an 8-taps FFE 10Gbps serial link transmitter with realistic channels and supply parasitics 116
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 116
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 116
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 115
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 115
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 114
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 114
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 114
Design and implementation of switched coil LC-VCOs in the GHz range using the self-inductance technique 114
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 113
Monte-Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs 113
Digital and analog TFET circuits: Design and benchmark 113
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 112
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 112
On the experimental determination of channel back-scattering in nanoMOSFETs 111
Two dimensional quantum mechanical simulation of low dimensional tunneling devices 111
Multi-Subband Semi-classical Simulation of n-type Tunnel-FETs 110
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 110
Design of a 8-taps, 10Gbps transmitter for automotive micro-controllers 109
Design and characterization of a 9.2Gbps transceiver for automotive microcontroller applications with 8-taps FFE and 1-tap unrolled/4-taps DFE 109
Improved understanding of metal–graphene contacts 108
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 107
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 107
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 107
Package Design Methodology for Crosstalk Mitigation between DC/DC Converter and ADC Analog Inputs in Complex SoC 107
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 106
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 106
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 106
Sub-mW multi-Gbps chip-to-chip communication Links for Ultra-Low Power IoT end-nodes 106
Chip/Package/Board Co-Simulation Methodology for Crosstalk between DC/DC Converter and ADC Input Channels 106
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 106
On the extraction of the channel current in permeable gate oxide MOSFETs 105
Simulation of the Performance of Graphene FETs With a Semiclassical Model, Including Band-to-Band Tunneling 105
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 105
Hot Carrier Degradation: From Defect Creation Modeling to Their Impact on NMOS Parameters 104
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 104
Totale 12.537
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Categoria #
all - tutte 76.484
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 76.484
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20192.518 0 0 0 0 0 0 0 0 0 459 1.200 859
2019/20208.323 471 393 331 1.228 618 1.202 983 952 807 630 200 508
2020/20214.466 132 571 169 603 265 591 232 464 539 205 456 239
2021/20222.628 150 217 95 115 34 162 179 113 32 462 671 398
2022/20232.859 348 339 31 385 233 720 33 210 342 37 78 103
2023/2024876 147 80 25 23 145 153 17 93 141 52 0 0
Totale 28.252