IRIS
PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 27.579
AS - Asia 9.894
EU - Europa 6.494
SA - Sud America 2.021
AF - Africa 233
Continente sconosciuto - Info sul continente non disponibili 16
OC - Oceania 6
AN - Antartide 1
Totale 46.244
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Nazione #
US - Stati Uniti d'America 27.228
SG - Singapore 4.876
CN - Cina 1.960
UA - Ucraina 1.590
BR - Brasile 1.570
IT - Italia 1.043
DE - Germania 1.027
HK - Hong Kong 971
VN - Vietnam 803
FI - Finlandia 576
RU - Federazione Russa 560
FR - Francia 457
IE - Irlanda 346
IN - India 246
TR - Turchia 242
SE - Svezia 241
GB - Regno Unito 208
CA - Canada 201
AR - Argentina 173
BD - Bangladesh 139
IQ - Iraq 95
MX - Messico 86
KR - Corea 75
AT - Austria 73
EC - Ecuador 71
ZA - Sudafrica 69
PL - Polonia 65
JP - Giappone 64
CO - Colombia 63
ID - Indonesia 59
NL - Olanda 56
PK - Pakistan 52
CH - Svizzera 38
VE - Venezuela 37
ES - Italia 36
MA - Marocco 34
CZ - Repubblica Ceca 33
SA - Arabia Saudita 32
BE - Belgio 31
UZ - Uzbekistan 31
PH - Filippine 30
PY - Paraguay 30
CL - Cile 29
KE - Kenya 25
TW - Taiwan 23
JO - Giordania 21
LT - Lituania 20
AE - Emirati Arabi Uniti 19
GR - Grecia 17
BO - Bolivia 16
MY - Malesia 16
PE - Perù 16
TG - Togo 16
TN - Tunisia 16
IL - Israele 15
DO - Repubblica Dominicana 14
EG - Egitto 14
RO - Romania 14
UY - Uruguay 14
AZ - Azerbaigian 13
DZ - Algeria 13
KZ - Kazakistan 13
AM - Armenia 11
OM - Oman 11
EU - Europa 10
GE - Georgia 10
NP - Nepal 9
PA - Panama 9
TH - Thailandia 9
TT - Trinidad e Tobago 8
BG - Bulgaria 7
KG - Kirghizistan 7
LA - Repubblica Popolare Democratica del Laos 7
RS - Serbia 7
BH - Bahrain 6
ET - Etiopia 6
JM - Giamaica 6
LB - Libano 6
LY - Libia 6
DK - Danimarca 5
IR - Iran 5
NI - Nicaragua 5
PS - Palestinian Territory 5
AL - Albania 4
AO - Angola 4
CR - Costa Rica 4
LV - Lettonia 4
NZ - Nuova Zelanda 4
PT - Portogallo 4
SI - Slovenia 4
SN - Senegal 4
SY - Repubblica araba siriana 4
XK - ???statistics.table.value.countryCode.XK??? 4
ZW - Zimbabwe 4
BY - Bielorussia 3
CG - Congo 3
CI - Costa d'Avorio 3
EE - Estonia 3
HR - Croazia 3
LU - Lussemburgo 3
Totale 46.178
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Città #
Woodbridge 3.307
Fairfield 3.026
Houston 2.212
Ashburn 1.938
Ann Arbor 1.934
Singapore 1.774
Chandler 1.297
Seattle 1.268
Wilmington 1.164
Jacksonville 1.037
Cambridge 1.022
Hong Kong 963
Beijing 952
Dearborn 678
San Jose 662
Boardman 437
Udine 420
Dublin 330
Princeton 321
Lauterbourg 307
Los Angeles 295
Ho Chi Minh City 242
Izmir 190
Hanoi 172
New York 153
San Diego 153
Buffalo 146
São Paulo 142
Dallas 129
Munich 120
Hefei 116
Santa Clara 104
Ottawa 103
Redondo Beach 103
Des Moines 77
Ogden 77
The Dalles 75
Helsinki 69
Council Bluffs 67
Seoul 61
Milan 56
Nanjing 56
Warsaw 54
Orem 51
Frankfurt am Main 50
Norwalk 48
Tokyo 48
Vienna 45
Guangzhou 44
Atlanta 43
Chennai 43
Rio de Janeiro 43
Denver 42
Düsseldorf 42
Kunming 41
Redmond 40
Baghdad 37
Nuremberg 37
Da Nang 36
Phoenix 36
Brooklyn 34
Dong Ket 34
Mumbai 34
Johannesburg 33
Amsterdam 32
Brasília 30
Grafing 30
Rome 30
Simi Valley 29
Stockholm 29
Brno 28
Brussels 28
London 28
Montreal 28
Trieste 28
Belo Horizonte 27
Chicago 27
Shanghai 27
Dhaka 26
Haiphong 26
Lappeenranta 26
Tashkent 25
Modena 24
Nairobi 24
Hangzhou 23
Boston 22
Campinas 22
Chengdu 22
Guayaquil 22
Toronto 22
Cervignano Del Friuli 21
Jinan 21
Poplar 21
Quito 21
San Mateo 21
Mexico City 20
Porto Alegre 20
Salvador 20
Manchester 19
Nanchang 19
Totale 29.558
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Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.667
Physics-Based and Compact Models for Self-Heating in High-Speed Bipolar Integrated Circuits 274
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 269
Improved surface roughness modeling and mobility projections in thin film MOSFETs 239
A better understanding of the low-field mobility in Graphene Nano-ribbons 227
A review of selected topics in physics based modeling for tunnel field-effect transistors 224
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 221
Modeling charge collection in x-ray imagers 218
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 218
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 215
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 215
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 214
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 212
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 207
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 206
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 202
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 201
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 200
Early assessment of tunnel-FET for energy-efficient logic circuits 197
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 196
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 195
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 195
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 194
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 193
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 193
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 192
A design methodology for MOS Current-Mode Logic Frequency Dividers 190
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 190
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 189
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 189
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 189
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 187
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 187
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 187
Total Ionizing Dose Effects in Si-Based Tunnel FETs 186
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 185
Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations 185
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 185
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 182
Semi-analytic Modeling for Hot Carriers in Electron Devices 182
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 182
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 181
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 181
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 181
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 181
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 181
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 180
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 179
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 178
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 178
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 176
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 176
Simulation of nano-biosensors based on conventional TCAD 175
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 174
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 174
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 174
On the experimental determination of channel back-scattering in nanoMOSFETs 172
The impact of interface states on the mobility and the drive current of III-V MOSFETs 172
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 172
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 171
Sensitivity of Silicon Nanowire Biochemical Sensors 170
Experimental characterization of the Static Noise Margins of strained Silicon complementary Tunnel-FET SRAM 170
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 170
Improved understanding of metal–graphene contacts 170
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 169
A simple and fast tool for the modelling of inter-symbol interference and equalization in high-speed chip-to-chip interfaces 169
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 168
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 167
Simulation of DC and RF Performance of the Graphene Base Transistor 167
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 166
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 166
Design of a half-rate receiver for a 10Gbps automotive serial interface with 1-tap-unrolled 4-taps DFE and custom CDR algorithm 166
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 166
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 166
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 165
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 165
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections 165
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 165
Modeling approaches for band-structure calculation in III-V FET quantum wells 163
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 163
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 162
Non-local microscopic view of signal propagation times in BJTs biased up to high currents 161
Technology Computer Aided Design 161
Theory of Motion at the band crossing points in bulk semiconductor crystals and in inversion layers 161
Performance analysis of different SRAM cell topologies employing tunnel-FETs 161
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 160
Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices 160
Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering 159
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 159
System and transistor level analysis of an 8-taps FFE 10Gbps serial link transmitter with realistic channels and supply parasitics 159
An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations 158
Technology Oriented Analytical Models of MOSFETs in the Quasi Ballistic Regime 158
Design and characterization of a 9.2Gbps transceiver for automotive microcontroller applications with 8-taps FFE and 1-tap unrolled/4-taps DFE 158
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 158
Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model 158
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 157
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 157
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 157
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 157
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 156
Totale 19.648
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Categoria #
all - tutte 160.296
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 160.296
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021695 0 0 0 0 0 0 0 0 0 0 456 239
2021/20222.628 150 217 95 115 34 162 179 113 32 462 671 398
2022/20232.859 348 339 31 385 233 720 33 210 342 37 78 103
2023/20241.129 147 80 25 23 145 153 17 93 141 59 37 209
2024/20257.743 1.477 563 310 165 184 293 394 337 620 696 882 1.822
2025/202610.653 688 1.187 1.029 1.423 1.872 818 1.157 325 748 924 482 0
Totale 46.901