IRIS
PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 23.801
EU - Europa 4.998
AS - Asia 1.988
AF - Africa 19
Continente sconosciuto - Info sul continente non disponibili 12
SA - Sud America 12
Totale 30.830
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Nazione #
US - Stati Uniti d'America 23.673
UA - Ucraina 1.564
IT - Italia 974
CN - Cina 898
DE - Germania 824
SG - Singapore 720
FI - Finlandia 522
IE - Irlanda 337
RU - Federazione Russa 220
SE - Svezia 212
TR - Turchia 192
CA - Canada 121
GB - Regno Unito 93
IN - India 65
FR - Francia 49
AT - Austria 35
VN - Vietnam 35
CZ - Repubblica Ceca 30
BE - Belgio 28
CH - Svizzera 23
JP - Giappone 17
NL - Olanda 14
TG - Togo 14
HK - Hong Kong 13
GR - Grecia 12
PL - Polonia 12
RO - Romania 11
EU - Europa 10
KR - Corea 10
TW - Taiwan 10
ES - Italia 9
BD - Bangladesh 5
PE - Perù 5
GE - Georgia 4
PH - Filippine 4
BG - Bulgaria 3
CL - Cile 3
DK - Danimarca 3
IR - Iran 3
LT - Lituania 3
MX - Messico 3
NO - Norvegia 3
RS - Serbia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AM - Armenia 2
BR - Brasile 2
EC - Ecuador 2
EE - Estonia 2
EG - Egitto 2
HU - Ungheria 2
LA - Repubblica Popolare Democratica del Laos 2
LU - Lussemburgo 2
LV - Lettonia 2
MA - Marocco 2
PA - Panama 2
AE - Emirati Arabi Uniti 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BN - Brunei Darussalam 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
HR - Croazia 1
JO - Giordania 1
KG - Kirghizistan 1
LI - Liechtenstein 1
LK - Sri Lanka 1
MK - Macedonia 1
PK - Pakistan 1
PR - Porto Rico 1
PT - Portogallo 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
Totale 30.830
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Città #
Woodbridge 3.307
Fairfield 3.024
Houston 2.192
Ann Arbor 1.934
Ashburn 1.383
Chandler 1.297
Seattle 1.255
Wilmington 1.164
Jacksonville 1.035
Cambridge 1.022
Dearborn 678
Singapore 602
Boardman 435
Udine 416
Beijing 388
Dublin 324
Princeton 321
Izmir 186
San Diego 149
Ottawa 103
Ogden 77
Des Moines 73
New York 61
Hefei 54
Nanjing 53
Munich 50
Milan 48
Norwalk 48
Redmond 40
Kunming 39
Guangzhou 38
Helsinki 37
Dong Ket 34
Grafing 30
Simi Valley 29
Brno 28
Brussels 27
Santa Clara 26
Vienna 25
Modena 24
Rome 24
Trieste 24
Los Angeles 22
Cervignano Del Friuli 21
Jinan 21
San Mateo 21
Hangzhou 20
Chengdu 19
Nanchang 19
Indiana 18
Lappeenranta 17
Arezzo 16
Falls Church 16
Zurich 16
Lomé 14
Pune 14
Redwood City 14
Shenyang 14
Bologna 13
Shanghai 13
Wuhan 13
Hebei 12
Toronto 12
Fuzhou 11
Xi'an 11
Dallas 10
Changsha 9
Codroipo 9
Hong Kong 9
Hyderabad 9
Phoenix 9
Zhengzhou 9
Amsterdam 8
Andover 8
Barcelona 8
Horia 8
Bengaluru 7
Cork 7
Frankfurt am Main 7
San Francisco 7
Treviso 7
Baotou 6
Martignacco 6
Parma 6
Pesaro 6
Scafati 6
Taizhou 6
Warsaw 6
Duncan 5
Fremont 5
London 5
Moscow 5
Nuremberg 5
Palaiseau 5
Shaoxing 5
Yellow Springs 5
Auburn Hills 4
Bangalore 4
Belforte del Chienti 4
Catania 4
Totale 22.700
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Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.630
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 193
Improved surface roughness modeling and mobility projections in thin film MOSFETs 181
Modeling charge collection in x-ray imagers 176
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 170
Early assessment of tunnel-FET for energy-efficient logic circuits 164
A better understanding of the low-field mobility in Graphene Nano-ribbons 163
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 163
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 161
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 160
A review of selected topics in physics based modeling for tunnel field-effect transistors 158
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 156
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 153
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 152
Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations 150
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 149
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 148
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 148
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 147
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 145
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 145
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 144
Total Ionizing Dose Effects in Si-Based Tunnel FETs 144
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 144
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 143
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 142
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 141
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 140
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 140
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 139
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 137
Experimental characterization of the Static Noise Margins of strained Silicon complementary Tunnel-FET SRAM 135
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 134
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 134
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 134
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 133
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 133
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 132
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 132
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections 132
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 132
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 131
Semi-analytic Modeling for Hot Carriers in Electron Devices 130
Simulation of nano-biosensors based on conventional TCAD 129
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 129
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 129
Modeling approaches for band-structure calculation in III-V FET quantum wells 128
The impact of interface states on the mobility and the drive current of III-V MOSFETs 128
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 127
Sensitivity of Silicon Nanowire Biochemical Sensors 127
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 127
A design methodology for MOS Current-Mode Logic Frequency Dividers 126
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 126
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 126
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 126
Performance analysis of different SRAM cell topologies employing tunnel-FETs 126
Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices 125
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 125
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 125
Design of a half-rate receiver for a 10Gbps automotive serial interface with 1-tap-unrolled 4-taps DFE and custom CDR algorithm 124
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 123
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 123
Efficient Quantum Mechanical Simulation of Band-to-band Tunneling 122
Technology Computer Aided Design 121
Simulation of DC and RF Performance of the Graphene Base Transistor 121
System and transistor level analysis of an 8-taps FFE 10Gbps serial link transmitter with realistic channels and supply parasitics 121
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 121
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 120
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 120
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 119
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 118
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 118
Improved understanding of metal–graphene contacts 118
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 117
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 117
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 117
Monte-Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs 116
Design and implementation of switched coil LC-VCOs in the GHz range using the self-inductance technique 116
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 115
Two dimensional quantum mechanical simulation of low dimensional tunneling devices 115
Digital and analog TFET circuits: Design and benchmark 115
Design and characterization of a 9.2Gbps transceiver for automotive microcontroller applications with 8-taps FFE and 1-tap unrolled/4-taps DFE 115
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 115
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 114
Multi-Subband Semi-classical Simulation of n-type Tunnel-FETs 114
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 114
On the experimental determination of channel back-scattering in nanoMOSFETs 113
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 113
Sub-mW multi-Gbps chip-to-chip communication Links for Ultra-Low Power IoT end-nodes 113
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 112
Design of a 8-taps, 10Gbps transmitter for automotive micro-controllers 112
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 112
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 110
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 110
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 110
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines 110
Package Design Methodology for Crosstalk Mitigation between DC/DC Converter and ADC Analog Inputs in Complex SoC 110
Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation 109
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 109
Chip/Package/Board Co-Simulation Methodology for Crosstalk between DC/DC Converter and ADC Input Channels 109
Totale 14.588
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Categoria #
all - tutte 101.398
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 101.398
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20205.282 0 0 0 0 0 1.202 983 952 807 630 200 508
2020/20214.466 132 571 169 603 265 591 232 464 539 205 456 239
2021/20222.628 150 217 95 115 34 162 179 113 32 462 671 398
2022/20232.859 348 339 31 385 233 720 33 210 342 37 78 103
2023/20241.129 147 80 25 23 145 153 17 93 141 59 37 209
2024/20252.974 1.477 563 310 165 184 275 0 0 0 0 0 0
Totale 31.479