IRIS
PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 28.906
AS - Asia 10.021
EU - Europa 6.760
SA - Sud America 2.086
Continente sconosciuto - Info sul continente non disponibili 674
AF - Africa 235
OC - Oceania 7
AN - Antartide 1
Totale 48.690
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Nazione #
US - Stati Uniti d'America 28.487
SG - Singapore 4.904
CN - Cina 1.993
UA - Ucraina 1.592
BR - Brasile 1.591
IT - Italia 1.285
DE - Germania 1.027
HK - Hong Kong 985
VN - Vietnam 810
FI - Finlandia 577
RU - Federazione Russa 562
FR - Francia 458
IE - Irlanda 346
IN - India 254
TR - Turchia 242
SE - Svezia 241
CA - Canada 231
GB - Regno Unito 214
AR - Argentina 181
BD - Bangladesh 150
IQ - Iraq 95
MX - Messico 94
CO - Colombia 80
EC - Ecuador 75
KR - Corea 75
AT - Austria 73
ZA - Sudafrica 69
JP - Giappone 66
PL - Polonia 66
ID - Indonesia 62
NL - Olanda 58
PK - Pakistan 53
VE - Venezuela 49
ES - Italia 42
CH - Svizzera 38
MA - Marocco 34
SA - Arabia Saudita 34
CZ - Repubblica Ceca 33
PH - Filippine 33
BE - Belgio 31
CL - Cile 31
UZ - Uzbekistan 31
PY - Paraguay 30
KE - Kenya 27
TW - Taiwan 26
JO - Giordania 21
LT - Lituania 21
AE - Emirati Arabi Uniti 20
MY - Malesia 20
GR - Grecia 17
PE - Perù 17
BO - Bolivia 16
TG - Togo 16
TN - Tunisia 16
IL - Israele 15
DO - Repubblica Dominicana 14
EG - Egitto 14
JM - Giamaica 14
RO - Romania 14
UY - Uruguay 14
AZ - Azerbaigian 13
DZ - Algeria 13
KZ - Kazakistan 13
OM - Oman 12
AM - Armenia 11
EU - Europa 10
GE - Georgia 10
NP - Nepal 10
TH - Thailandia 10
TT - Trinidad e Tobago 10
CR - Costa Rica 9
PA - Panama 9
RS - Serbia 8
BG - Bulgaria 7
KG - Kirghizistan 7
LA - Repubblica Popolare Democratica del Laos 7
LB - Libano 7
PS - Palestinian Territory 7
BH - Bahrain 6
ET - Etiopia 6
LY - Libia 6
NI - Nicaragua 6
DK - Danimarca 5
HN - Honduras 5
IR - Iran 5
SV - El Salvador 5
XK - ???statistics.table.value.countryCode.XK??? 5
AL - Albania 4
AO - Angola 4
LV - Lettonia 4
NZ - Nuova Zelanda 4
PT - Portogallo 4
SI - Slovenia 4
SN - Senegal 4
SY - Repubblica araba siriana 4
ZW - Zimbabwe 4
BB - Barbados 3
BS - Bahamas 3
BY - Bielorussia 3
CG - Congo 3
Totale 47.954
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Città #
Woodbridge 3.307
Fairfield 3.027
Houston 2.215
Ashburn 2.188
Ann Arbor 1.934
Singapore 1.792
Chandler 1.298
Seattle 1.271
Wilmington 1.165
Jacksonville 1.041
Cambridge 1.023
Hong Kong 977
Beijing 968
San Jose 737
Dearborn 678
Boardman 450
Udine 420
Council Bluffs 373
Dublin 330
Princeton 322
Lauterbourg 307
Los Angeles 301
Ho Chi Minh City 244
Izmir 190
Santa Clara 178
Hanoi 173
New York 159
San Diego 153
Buffalo 147
São Paulo 143
Dallas 139
Milan 139
Munich 120
Hefei 116
Ottawa 104
Redondo Beach 103
Des Moines 78
Ogden 77
The Dalles 75
Helsinki 70
Seoul 61
Nanjing 56
Warsaw 54
Orem 52
Frankfurt am Main 50
Norwalk 49
Tokyo 48
Atlanta 47
Phoenix 47
Denver 46
Vienna 45
Guangzhou 44
Chennai 43
Rio de Janeiro 43
Düsseldorf 42
Kunming 41
Redmond 41
Brooklyn 38
Baghdad 37
Chicago 37
Miano 37
Nuremberg 37
Da Nang 36
Rome 35
Dong Ket 34
Mumbai 34
Johannesburg 33
Amsterdam 32
Brasília 31
Montreal 31
Shanghai 31
Trieste 31
Grafing 30
London 30
Modena 30
Simi Valley 29
Stockholm 29
Brno 28
Brussels 28
Belo Horizonte 27
Haiphong 27
Dhaka 26
Lappeenranta 26
Nairobi 26
Tashkent 25
Toronto 25
Guayaquil 24
Bogotá 23
Boston 23
Hangzhou 23
Quito 23
Campinas 22
Chengdu 22
Mexico City 22
San Francisco 22
Cervignano Del Friuli 21
Jinan 21
Poplar 21
San Mateo 21
Porto Alegre 20
Totale 30.549
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Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.674
Physics-Based and Compact Models for Self-Heating in High-Speed Bipolar Integrated Circuits 281
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 281
Improved surface roughness modeling and mobility projections in thin film MOSFETs 243
A better understanding of the low-field mobility in Graphene Nano-ribbons 234
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 232
A review of selected topics in physics based modeling for tunnel field-effect transistors 228
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 224
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 222
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 220
Modeling charge collection in x-ray imagers 220
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 218
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 218
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 216
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 212
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 206
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 205
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 204
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 204
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 203
Early assessment of tunnel-FET for energy-efficient logic circuits 203
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 203
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 200
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 199
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 199
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 199
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 197
A design methodology for MOS Current-Mode Logic Frequency Dividers 196
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 195
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 195
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 194
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 194
Semi-analytic Modeling for Hot Carriers in Electron Devices 193
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 193
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 192
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 190
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 189
Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations 189
Total Ionizing Dose Effects in Si-Based Tunnel FETs 189
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 188
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 188
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 186
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 185
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 185
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 185
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 185
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 185
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 184
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 184
Improved understanding of metal–graphene contacts 184
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 183
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 183
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 183
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 181
The impact of interface states on the mobility and the drive current of III-V MOSFETs 180
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 180
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 179
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 179
Simulation of nano-biosensors based on conventional TCAD 178
Sensitivity of Silicon Nanowire Biochemical Sensors 177
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 176
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 176
Experimental characterization of the Static Noise Margins of strained Silicon complementary Tunnel-FET SRAM 175
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 175
Simulation of DC and RF Performance of the Graphene Base Transistor 174
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 173
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 173
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 173
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 173
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 173
On the experimental determination of channel back-scattering in nanoMOSFETs 172
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 172
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 172
A simple and fast tool for the modelling of inter-symbol interference and equalization in high-speed chip-to-chip interfaces 172
Non-local microscopic view of signal propagation times in BJTs biased up to high currents 171
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 171
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 171
Design of a half-rate receiver for a 10Gbps automotive serial interface with 1-tap-unrolled 4-taps DFE and custom CDR algorithm 171
Modeling approaches for band-structure calculation in III-V FET quantum wells 169
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections 168
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 168
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 168
Performance analysis of different SRAM cell topologies employing tunnel-FETs 167
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 166
Theory of Motion at the band crossing points in bulk semiconductor crystals and in inversion layers 166
An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations 166
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations 165
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 165
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS 165
Technology Computer Aided Design 164
The impact of longitudinal non-uniform Fin-thickness on quasi-ballistic transport in FinFETs 164
Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices 164
Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model 164
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 163
Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering 162
A model of the interface charge and chemical noise due to surface reactions in Ion Sensitive FETs 162
Technology Oriented Analytical Models of MOSFETs in the Quasi Ballistic Regime 161
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 161
Design and characterization of a 9.2Gbps transceiver for automotive microcontroller applications with 8-taps FFE and 1-tap unrolled/4-taps DFE 161
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 161
Totale 20.229
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Categoria #
all - tutte 172.415
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 172.415
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.261 0 0 95 115 34 162 179 113 32 462 671 398
2022/20232.859 348 339 31 385 233 720 33 210 342 37 78 103
2023/20241.129 147 80 25 23 145 153 17 93 141 59 37 209
2024/20257.743 1.477 563 310 165 184 293 394 337 620 696 882 1.822
2025/202611.033 688 1.187 1.029 1.423 1.872 818 1.157 325 748 924 593 269
2026/20271.409 254 761 394 0 0 0 0 0 0 0 0 0
Totale 48.690