IRIS
PALESTRI, Pierpaolo
 Distribuzione geografica
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Continente #
NA - Nord America 25.838
AS - Asia 8.207
EU - Europa 5.980
SA - Sud America 1.730
AF - Africa 142
Continente sconosciuto - Info sul continente non disponibili 15
OC - Oceania 5
AN - Antartide 1
Totale 41.918
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Nazione #
US - Stati Uniti d'America 25.561
SG - Singapore 4.172
CN - Cina 1.698
UA - Ucraina 1.584
BR - Brasile 1.426
IT - Italia 1.015
DE - Germania 996
HK - Hong Kong 906
VN - Vietnam 570
RU - Federazione Russa 550
FI - Finlandia 546
IE - Irlanda 342
SE - Svezia 239
TR - Turchia 218
GB - Regno Unito 186
CA - Canada 172
IN - India 149
FR - Francia 125
AR - Argentina 116
BD - Bangladesh 82
AT - Austria 71
KR - Corea 71
MX - Messico 61
PL - Polonia 60
EC - Ecuador 53
JP - Giappone 53
ZA - Sudafrica 47
ID - Indonesia 44
NL - Olanda 43
CH - Svizzera 37
CO - Colombia 37
IQ - Iraq 37
CZ - Repubblica Ceca 32
ES - Italia 29
BE - Belgio 28
PY - Paraguay 26
CL - Cile 20
PK - Pakistan 20
TW - Taiwan 19
UZ - Uzbekistan 19
LT - Lituania 18
MA - Marocco 18
VE - Venezuela 18
GR - Grecia 16
AE - Emirati Arabi Uniti 15
KE - Kenya 15
TG - Togo 15
RO - Romania 14
PE - Perù 13
JO - Giordania 12
AM - Armenia 11
EG - Egitto 11
IL - Israele 11
UY - Uruguay 11
AZ - Azerbaigian 10
EU - Europa 10
GE - Georgia 10
DO - Repubblica Dominicana 9
KZ - Kazakistan 9
BO - Bolivia 8
PA - Panama 8
PH - Filippine 8
SA - Arabia Saudita 8
KG - Kirghizistan 7
TN - Tunisia 7
TT - Trinidad e Tobago 7
BG - Bulgaria 6
LA - Repubblica Popolare Democratica del Laos 6
BH - Bahrain 5
DZ - Algeria 5
IR - Iran 5
NP - Nepal 5
OM - Oman 5
LB - Libano 4
LV - Lettonia 4
NZ - Nuova Zelanda 4
RS - Serbia 4
SI - Slovenia 4
SN - Senegal 4
TH - Thailandia 4
DK - Danimarca 3
EE - Estonia 3
ET - Etiopia 3
HR - Croazia 3
LU - Lussemburgo 3
NO - Norvegia 3
PS - Palestinian Territory 3
SV - El Salvador 3
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A2 - ???statistics.table.value.countryCode.A2??? 2
AL - Albania 2
AO - Angola 2
BB - Barbados 2
BY - Bielorussia 2
CI - Costa d'Avorio 2
CR - Costa Rica 2
CY - Cipro 2
GH - Ghana 2
GT - Guatemala 2
HU - Ungheria 2
Totale 41.873
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Città #
Woodbridge 3.307
Fairfield 3.024
Houston 2.206
Ann Arbor 1.934
Ashburn 1.711
Singapore 1.442
Chandler 1.297
Seattle 1.266
Wilmington 1.164
Jacksonville 1.035
Cambridge 1.022
Beijing 913
Hong Kong 901
Dearborn 678
Boardman 435
Udine 419
Dublin 326
Princeton 321
Los Angeles 247
Izmir 186
Ho Chi Minh City 185
San Diego 153
Buffalo 140
New York 134
São Paulo 127
Munich 120
Hanoi 118
Dallas 117
Hefei 116
Ottawa 103
Redondo Beach 103
Ogden 77
Des Moines 75
Seoul 60
Nanjing 53
Milan 52
Santa Clara 52
Warsaw 49
Norwalk 48
Vienna 43
Düsseldorf 42
Helsinki 42
Kunming 40
Redmond 40
Guangzhou 39
Rio de Janeiro 39
Tokyo 38
Denver 35
Dong Ket 34
Nuremberg 31
Brooklyn 30
Grafing 30
Frankfurt am Main 29
Johannesburg 29
Simi Valley 29
Atlanta 28
Brno 28
Phoenix 28
Rome 28
Brasília 27
Brussels 27
Stockholm 27
Trieste 27
Chennai 26
Mumbai 26
Amsterdam 25
Belo Horizonte 25
Lappeenranta 24
Modena 24
Montreal 24
London 23
Hangzhou 22
Orem 22
Cervignano Del Friuli 21
Jinan 21
San Mateo 21
Chengdu 20
Toronto 20
Boston 19
Campinas 19
Da Nang 19
Nanchang 19
Poplar 19
Salvador 19
Chicago 18
Indiana 18
Porto Alegre 18
Portsmouth 18
San Francisco 18
Shanghai 18
Zurich 18
Dhaka 17
Guayaquil 17
Arezzo 16
Falls Church 16
Haiphong 16
Wuhan 16
Asunción 15
Curitiba 15
Goiânia 15
Totale 27.233
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Nome #
Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells 1.653
Physics-Based and Compact Models for Self-Heating in High-Speed Bipolar Integrated Circuits 264
A TCAD-Based Methodology to Model the Site-Binding Charge at ISFET/Electrolyte Interfaces 229
Improved surface roughness modeling and mobility projections in thin film MOSFETs 221
Modeling charge collection in x-ray imagers 206
A better understanding of the low-field mobility in Graphene Nano-ribbons 205
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 202
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 202
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 202
A review of selected topics in physics based modeling for tunnel field-effect transistors 200
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 196
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 196
Efficient Statistical Simulation of Intersymbol Interference and Jitter in High-Speed Serial Interfaces 195
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 191
Early assessment of tunnel-FET for energy-efficient logic circuits 188
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 187
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 184
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors 183
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 183
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 182
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 180
Monte Carlo Simulation of Substrate Enhanced Electron Injection in Split-gate Memory Cells 179
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 179
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 178
Semi-analytic Modeling for Hot Carriers in Electron Devices 177
Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations 177
Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation 177
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 176
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 176
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 176
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 174
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 174
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 172
A design methodology for MOS Current-Mode Logic Frequency Dividers 172
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 172
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors 170
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 170
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 169
Total Ionizing Dose Effects in Si-Based Tunnel FETs 168
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 167
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 167
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 166
Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint 166
Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions 165
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 164
On the response of nanoelectrode capacitive biosensors to DNA and PNA strands 163
A Model to Understand Current Consumption, Maximum Operating Frequency And Scaling Trends Of MCML Frequency Dividers 163
Modeling, design and characterization of a new Low Jitter analog Dual Tuning LC-VCO PLL Architecture 163
On the experimental determination of channel back-scattering in nanoMOSFETs 162
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 162
Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs 161
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 161
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 161
Sensitivity of Silicon Nanowire Biochemical Sensors 159
A simple and fast tool for the modelling of inter-symbol interference and equalization in high-speed chip-to-chip interfaces 159
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 159
Experimental characterization of the Static Noise Margins of strained Silicon complementary Tunnel-FET SRAM 158
Design, characterization and signal integrity analysis of a 2.5 Gb/s high-speed serial interface for automotive applications overarching the chip/PCB wall 158
Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs 158
Simulation of nano-biosensors based on conventional TCAD 157
The impact of interface states on the mobility and the drive current of III-V MOSFETs 157
TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections 156
Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices 155
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 155
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 155
Design of a half-rate receiver for a 10Gbps automotive serial interface with 1-tap-unrolled 4-taps DFE and custom CDR algorithm 155
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 155
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 154
Modeling approaches for band-structure calculation in III-V FET quantum wells 153
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects 153
Improved understanding of metal–graphene contacts 153
Non-local microscopic view of signal propagation times in BJTs biased up to high currents 152
Technology Computer Aided Design 152
Simulation of DC and RF Performance of the Graphene Base Transistor 152
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 152
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 152
Modeling of End of the Roadmap nMOSFET with Alternative Channel Material 151
Technology Oriented Analytical Models of MOSFETs in the Quasi Ballistic Regime 151
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 151
A new analytical model for the energy dispersion in two-dimensional hole inversion layers 149
System and transistor level analysis of an 8-taps FFE 10Gbps serial link transmitter with realistic channels and supply parasitics 149
Design and characterization of a 9.2Gbps transceiver for automotive microcontroller applications with 8-taps FFE and 1-tap unrolled/4-taps DFE 149
Performance analysis of different SRAM cell topologies employing tunnel-FETs 149
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 149
Theory of Motion at the band crossing points in bulk semiconductor crystals and in inversion layers 148
Monte-Carlo simulation of MOSFETs with band offsets in the source and drain 148
Back-Scattering in Quasi Ballistic NanoMOSFETs: The Role of Non Thermal Carrier Distributions 148
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 148
Impact Ionization and Photon Emission in MOS Capacitors and FETs 148
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 147
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 147
Design and implementation of switched coil LC-VCOs in the GHz range using the self-inductance technique 147
On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance 146
Chip/Package/Board Co-Simulation Methodology for Crosstalk between DC/DC Converter and ADC Input Channels 146
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 146
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 145
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 145
Monte-Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs 144
Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility 144
Efficient Quantum Mechanical Simulation of Band-to-band Tunneling 143
Totale 18.183
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Categoria #
all - tutte 147.163
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 147.163
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20212.726 0 0 0 0 0 591 232 464 539 205 456 239
2021/20222.628 150 217 95 115 34 162 179 113 32 462 671 398
2022/20232.859 348 339 31 385 233 720 33 210 342 37 78 103
2023/20241.129 147 80 25 23 145 153 17 93 141 59 37 209
2024/20257.743 1.477 563 310 165 184 293 394 337 620 696 882 1.822
2025/20266.327 688 1.187 1.029 1.423 1.872 128 0 0 0 0 0 0
Totale 42.575