PALA, Marco Giuseppe
 Distribuzione geografica
Continente #
EU - Europa 77
NA - Nord America 73
AS - Asia 12
AF - Africa 1
OC - Oceania 1
SA - Sud America 1
Totale 165
Nazione #
US - Stati Uniti d'America 73
IT - Italia 42
PL - Polonia 12
FR - Francia 9
IR - Iran 4
NL - Olanda 4
CZ - Repubblica Ceca 2
DE - Germania 2
JP - Giappone 2
TW - Taiwan 2
UA - Ucraina 2
VN - Vietnam 2
AU - Australia 1
BR - Brasile 1
CN - Cina 1
FI - Finlandia 1
GB - Regno Unito 1
IE - Irlanda 1
IN - India 1
RU - Federazione Russa 1
ZA - Sudafrica 1
Totale 165
Città #
Udine 17
Warsaw 10
Fairfield 9
Ashburn 8
Santa Cruz 8
Seattle 7
New York 4
Ann Arbor 3
Houston 3
Trieste 3
Varallo 3
Buffalo 2
Des Moines 2
Dong Ket 2
Hsinchu 2
Paris 2
Wilmington 2
Woodbridge 2
Amsterdam 1
Beijing 1
Bochum 1
Cambridge 1
Chicago 1
Cork 1
Helsinki 1
Heyrieux 1
Hyderabad 1
Jacksonville 1
Jersey City 1
Las Vegas 1
Luino 1
Milan 1
Muizenberg 1
Neubiberg 1
Raleigh 1
Rio de Janeiro 1
Riva 1
Rotterdam 1
Spartanburg 1
Strasbourg 1
Sydney 1
Totale 112
Nome #
A review of selected topics in physics based modeling for tunnel field-effect transistors, file e27ce0c7-9c21-055e-e053-6605fe0a7873 93
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off, file 95ea89c1-f9b8-4c1f-b091-89208f7bd878 37
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits, file e27ce0c5-4332-055e-e053-6605fe0a7873 12
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator, file 8800e456-7675-4330-9b1b-3ce1bf6b5f77 7
Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations, file eedbf8f9-b814-4a69-9846-a49dc779bbbf 6
Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices, file e27ce0c7-9bf3-055e-e053-6605fe0a7873 3
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations, file e27ce0c5-079c-055e-e053-6605fe0a7873 2
Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications, file e27ce0c5-674b-055e-e053-6605fe0a7873 2
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts, file 42b73833-b48c-4d24-9b88-8cfca6a4c6ac 1
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off, file d1844737-a71e-47cd-a37a-bda8cf465007 1
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope, file e27ce0c1-f59d-055e-e053-6605fe0a7873 1
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges, file e27ce0c2-6d16-055e-e053-6605fe0a7873 1
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides, file e27ce0c2-9464-055e-e053-6605fe0a7873 1
Totale 167
Categoria #
all - tutte 437
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 437


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202017 0 0 3 0 0 0 0 3 5 2 3 1
2020/202126 2 2 3 1 3 1 2 2 3 1 4 2
2021/202228 2 2 0 4 2 1 2 1 1 1 8 4
2022/202330 0 0 11 6 2 4 2 0 0 1 2 2
2023/202455 0 12 3 0 5 12 7 5 1 7 3 0
Totale 167