IRIS
PALA, Marco Giuseppe
 Distribuzione geografica
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Continente #
NA - Nord America 2.402
EU - Europa 578
AS - Asia 406
AF - Africa 46
OC - Oceania 1
SA - Sud America 1
Totale 3.434
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Nazione #
US - Stati Uniti d'America 2.394
SG - Singapore 264
IT - Italia 161
UA - Ucraina 118
CN - Cina 102
RU - Federazione Russa 96
DE - Germania 79
TG - Togo 44
FI - Finlandia 39
IE - Irlanda 35
TR - Turchia 19
SE - Svezia 16
GB - Regno Unito 9
NL - Olanda 9
CA - Canada 8
IN - India 7
AT - Austria 4
BE - Belgio 4
HK - Hong Kong 4
TW - Taiwan 4
FR - Francia 3
PL - Polonia 2
VN - Vietnam 2
BR - Brasile 1
DK - Danimarca 1
EG - Egitto 1
IS - Islanda 1
KR - Corea 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
MD - Moldavia 1
NZ - Nuova Zelanda 1
PK - Pakistan 1
ZA - Sudafrica 1
Totale 3.434
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Città #
Fairfield 324
Woodbridge 305
Singapore 238
Ann Arbor 187
Houston 181
Ashburn 160
Boardman 153
Wilmington 125
Seattle 124
Cambridge 117
Chandler 103
Jacksonville 72
Dearborn 62
Udine 52
Lomé 44
Ogden 36
Dublin 35
Beijing 30
Princeton 29
Izmir 18
New York 17
San Diego 15
Santa Clara 15
Hefei 12
Munich 10
Des Moines 9
Trieste 8
Amsterdam 7
Nanjing 7
Rome 7
Hyderabad 6
Milan 6
Parma 6
Shenzhen 6
Norwalk 5
Brussels 4
Falls Church 4
Fuzhou 4
Hong Kong 4
Indiana 4
Lappeenranta 4
Taipei 4
Grafing 3
Guangzhou 3
Helsinki 3
Milford 3
Montreal 3
Nürnberg 3
Simi Valley 3
Vienna 3
Dallas 2
Dong Ket 2
Jinan 2
Kunming 2
Los Angeles 2
Mcallen 2
Nanchang 2
Ottawa 2
Paris 2
Ponzano 2
Rzeszów 2
Secaucus 2
Shanghai 2
Shaoxing 2
Shijiazhuang 2
Toronto 2
Zagarolo 2
Agugliano 1
Auckland 1
Cairo 1
Carpi 1
Casarsa della Delizia 1
Catania 1
Changsha 1
Chicago 1
Chongqing 1
Civitella in Val di Chiana 1
Codroipo 1
Colombo 1
Copenhagen 1
Düsseldorf 1
Fayetteville 1
Gebze 1
Hebei 1
Islamabad 1
Jiaxing 1
Johannesburg 1
Langfang 1
Lecce 1
Lexington 1
Montréal 1
Moscow 1
Nanning 1
Neubiberg 1
Quzhou 1
Redmond 1
Redwood City 1
Reggio Calabria 1
Reykjavik 1
Rio de Janeiro 1
Totale 2.650
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Nome #
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope 177
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs 170
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 163
A review of selected topics in physics based modeling for tunnel field-effect transistors 158
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations 140
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges 131
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors 128
Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study 126
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals 124
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 117
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 117
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides 117
Transport models based on NEGF and empirical pseudopotentials: A computationally viable method for self-consistent simulation of nanoscale devices 116
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 110
Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications 108
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 106
Influence of interface traps on the performance of Tunnel FETs 104
Challenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects 79
Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading 77
Full band quantum transport modelling with EP and NEGF methods; Application to nanowire transistors 75
Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures 63
Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs - Part II: Comparative Analysis and Trap-Induced Variability 59
Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs - Part I: Model Description and Single Trap Analysis in Tunnel-FETs 54
Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices 43
Anisotropic flat band and charge density wave in quasi-one-dimensional indium telluride 37
Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism 31
A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies 28
Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application 28
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator 26
Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement 20
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts 20
Full-Band Quantum Transport of Heterojunction Electron Devices with Empirical Pseudopotentials 19
Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations 19
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off 18
3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity 18
A three-dimensional solver of the Schrodinger equation in momentum space for the detailed simulation of nanostructures 17
A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs 17
Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study 16
Scanning-Probe Electronic Imaging of Lithographically Patterned Quantum Rings 15
Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination 15
Electronic band gap of van der Waals α-As 2 Te 3 crystals 14
A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect 14
A new transport phenomenon in nanostructures: a mesoscopic analog of the Braess paradox encountered in road networks 14
Backscattering coefficient in gate-all-around 3C-SiC nanowire FETs 13
Nonlocal Andreev transport through an interacting quantum dot 13
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation 13
A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes 13
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials 13
Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs 13
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines 12
On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations 12
Imaging electron wave functions inside open quantum rings 11
Thermal conductance of twisted-layer graphite nanofibers 11
Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study 11
Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations 11
Full Band Monte Carlo simulation of phonon transfer at interfaces 10
Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions 10
Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs 10
Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices 10
Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes 10
Full quantum simulation of Shockley-Read-Hall recombination in p-i-n and tunnel diodes 10
Electronic properties of rhombohedrally stacked bilayer WSe2 obtained by chemical vapor deposition 10
Theoretical Study of Thermoelectric Properties of SiC Nanowires 10
Tunnel Field‐Effect Transistors Based on III–V Semiconductors 10
Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability 9
Modeling the Influence of Interface Traps on the Transfer Characteristics of In As Tunnel-FETs and MOSFETs 9
High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip‐Enhanced Photoluminescence 9
Superconducting proximity effect in interacting double-dot systems 9
Exploiting Hetero-Junctions to Improve the Performance of III-V Nanowire Tunnel-FETs 9
Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3 9
Hybridization and localized flat band in the WSe2/MoSe2heterobilayer 9
NEGF for 3D Device Simulation of Nanometric Inhomogenities 9
Direct observation of highly anisotropic electronic and optical nature in indium telluride 9
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD 9
Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP(111) Heterostructure 9
Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs 9
Full-3D real-space simulation of surface-roughness effects in double-gate MOSFETs 9
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 9
Scanning gate spectroscopy of transport across a quantum Hall nano-island 9
Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs 9
Beyond CMOS 9
Towards Self-Powered Systems: Using Nanostructures to Harvest Ambient Energy 9
Quantum Simulation of Silicon-Nanowire FETs 9
Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter 9
Modeling study of the mobility in FDSOI devices with a focus on near-spacer-region 8
Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs 8
Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors 8
Electric performance of AlGaN/GaN heterojunction devices: A full-quantum study 8
High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions 8
Universal Rashba spin precession of two-dimensional electrons and holes 8
VDD scaling of ultra-Thin InAs MOSFETs: A full-quantum study 8
Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects 8
Local density of states in mesoscopic samples from scanning gate microscopy 8
Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier 8
High performance WTe2-MoS2in-plane heterojunction Tunnel Field Effect Transistors 8
Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs 8
Effect of dephasing on the current statistics of mesoscopic devices 8
Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs 8
Three-dimensional simulation of single electron transistors 8
Three-dimensional simulation of realistic single electron transistors 8
Totale 3.592
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Categoria #
all - tutte 21.111
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 21.111
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020501 0 0 0 0 0 118 90 89 87 50 32 35
2020/2021445 14 41 61 46 38 49 23 43 45 30 29 26
2021/2022257 16 31 10 8 3 19 19 13 5 45 53 35
2022/2023258 35 22 3 34 24 62 0 15 34 10 9 10
2023/2024628 20 9 1 0 379 23 13 12 55 61 16 39
2024/2025673 45 168 176 25 68 191 0 0 0 0 0 0
Totale 3.867