IRIS
PALA, Marco Giuseppe
 Distribuzione geografica
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Continente #
NA - Nord America 5.605
AS - Asia 3.826
EU - Europa 1.517
SA - Sud America 830
Continente sconosciuto - Info sul continente non disponibili 473
AF - Africa 137
OC - Oceania 3
Totale 12.391
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Nazione #
US - Stati Uniti d'America 5.443
SG - Singapore 1.998
BR - Brasile 669
CN - Cina 636
HK - Hong Kong 432
IT - Italia 378
VN - Vietnam 316
DE - Germania 238
RU - Federazione Russa 208
FR - Francia 162
UA - Ucraina 142
KR - Corea 109
FI - Finlandia 88
GB - Regno Unito 75
CA - Canada 73
IN - India 64
BD - Bangladesh 49
AR - Argentina 48
TG - Togo 44
IE - Irlanda 43
NL - Olanda 37
TR - Turchia 36
EC - Ecuador 35
MX - Messico 30
CO - Colombia 29
AT - Austria 26
ZA - Sudafrica 26
IQ - Iraq 25
SE - Svezia 24
ID - Indonesia 22
PL - Polonia 21
PK - Pakistan 19
ES - Italia 18
MA - Marocco 15
IL - Israele 13
JP - Giappone 13
PH - Filippine 13
UZ - Uzbekistan 12
CL - Cile 11
CR - Costa Rica 11
KE - Kenya 11
VE - Venezuela 11
SA - Arabia Saudita 10
TT - Trinidad e Tobago 10
UY - Uruguay 10
JM - Giamaica 9
EE - Estonia 8
EG - Egitto 8
MY - Malesia 8
NP - Nepal 8
PR - Porto Rico 8
TW - Taiwan 8
BE - Belgio 7
DO - Repubblica Dominicana 7
PY - Paraguay 7
DZ - Algeria 6
LT - Lituania 6
BO - Bolivia 5
DK - Danimarca 5
JO - Giordania 5
SC - Seychelles 5
AZ - Azerbaigian 4
GR - Grecia 4
KG - Kirghizistan 4
KZ - Kazakistan 4
SI - Slovenia 4
SY - Repubblica araba siriana 4
CH - Svizzera 3
CI - Costa d'Avorio 3
ET - Etiopia 3
GP - Guadalupe 3
HN - Honduras 3
MD - Moldavia 3
NI - Nicaragua 3
PE - Perù 3
PS - Palestinian Territory 3
TN - Tunisia 3
AL - Albania 2
CW - ???statistics.table.value.countryCode.CW??? 2
GA - Gabon 2
LB - Libano 2
LK - Sri Lanka 2
LV - Lettonia 2
NG - Nigeria 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
PT - Portogallo 2
RS - Serbia 2
SK - Slovacchia (Repubblica Slovacca) 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BF - Burkina Faso 1
BH - Bahrain 1
BS - Bahamas 1
CU - Cuba 1
CZ - Repubblica Ceca 1
GF - Guiana Francese 1
Totale 11.902
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Città #
Singapore 722
San Jose 517
Council Bluffs 475
Ashburn 464
Hong Kong 424
Fairfield 337
Woodbridge 317
Beijing 248
Boardman 209
Houston 197
Ann Arbor 189
Seattle 138
Wilmington 134
Lauterbourg 133
Cambridge 123
Hefei 118
Ho Chi Minh City 108
Munich 105
Seoul 105
Santa Clara 104
Chandler 103
Los Angeles 103
Jacksonville 80
Udine 70
Dearborn 65
Redondo Beach 64
São Paulo 64
Hanoi 60
New York 55
Buffalo 50
Dallas 50
The Dalles 48
Helsinki 45
Lomé 44
Dublin 42
Phoenix 42
North Bergen 39
Ogden 36
Rio de Janeiro 32
Atlanta 31
Princeton 31
Brooklyn 30
Frankfurt am Main 25
Orem 23
Montreal 22
San Diego 21
Amsterdam 19
Curitiba 19
Chicago 18
Izmir 18
Brasília 17
Düsseldorf 17
Rome 16
Vienna 16
Bologna 15
Da Nang 15
Haiphong 15
Warsaw 15
Bogotá 13
Des Moines 13
Dhaka 13
San Francisco 13
Belo Horizonte 12
Boston 12
Manchester 12
Mexico City 12
Milan 12
Nairobi 11
Nuremberg 11
Columbus 10
Guayaquil 10
Modena 10
Poplar 10
Charlotte 9
Chennai 9
Denver 9
Montevideo 9
Mumbai 9
New Delhi 9
Salvador 9
San José 9
Shanghai 9
Shenzhen 9
Johannesburg 8
Las Vegas 8
London 8
Porto Alegre 8
Queens 8
Quito 8
Stockholm 8
Tashkent 8
Tokyo 8
Trieste 8
Washington 8
Biên Hòa 7
Guangzhou 7
Guarulhos 7
Hải Dương 7
Irvine 7
Nanjing 7
Totale 7.036
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Nome #
A review of selected topics in physics based modeling for tunnel field-effect transistors 231
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 225
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs 225
Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement 224
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges 221
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope 218
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations 190
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 184
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 174
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 172
Sub-60mV/dec Swing and Drive Current in Dirac-Source FETs: a Design Study based on First-Principle Transport Simulations 166
Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study 166
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors 163
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 162
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides 162
Transport models based on NEGF and empirical pseudopotentials: A computationally viable method for self-consistent simulation of nanoscale devices 161
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals 156
Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications 151
Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading 144
Challenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects 138
Influence of interface traps on the performance of Tunnel FETs 133
Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application 129
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off 120
Full band quantum transport modelling with EP and NEGF methods; Application to nanowire transistors 117
Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs - Part II: Comparative Analysis and Trap-Induced Variability 112
Anisotropic flat band and charge density wave in quasi-one-dimensional indium telluride 110
A three-dimensional solver of the Schrodinger equation in momentum space for the detailed simulation of nanostructures 107
Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs - Part I: Model Description and Single Trap Analysis in Tunnel-FETs 106
Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures 106
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator 104
Impact of Interface Traps on the IV Curves of InAs Tunnel-FETs and MOSFETs: A Full Quantum Study 104
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts 103
A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect 101
A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes 95
3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity 94
A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies 92
Backscattering coefficient in gate-all-around 3C-SiC nanowire FETs 91
Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination 87
Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP(111) Heterostructure 84
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials 84
Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs 83
Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices 83
Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism 83
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD 82
A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs 82
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation 81
Three-dimensional simulation of realistic single electron transistors 81
Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors 79
Universal Rashba spin precession of two-dimensional electrons and holes 79
Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT 79
Scanning-Probe Electronic Imaging of Lithographically Patterned Quantum Rings 78
A new transport phenomenon in nanostructures: a mesoscopic analog of the Braess paradox encountered in road networks 78
Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study 77
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 76
Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs 75
Ab-Initio Transport Study of Source-to-Channel Resistance in Metal-MoS2 Top Contacts Including Image Force Barrier Lowering in a Heterogeneous Dielectric Environment 75
Extraction of parameters of surface states from experimental test structures 74
Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs 73
Imaging electron wave functions inside open quantum rings 72
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines 72
Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3 72
Direct observation of highly anisotropic electronic and optical nature in indium telluride 72
Hybridization and localized flat band in the WSe2/MoSe2heterobilayer 71
Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects 71
Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads 71
Quantum Simulation of Silicon-Nanowire FETs 71
Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations 70
Full quantum investigation of low field mobility in short-channel Silicon nanowire FETs 70
Full-Band Monte Carlo Study of Hot Carriers for Advection-Diffusion Monte Carlo Simulations 70
Full quantum simulation of Shockley-Read-Hall recombination in p-i-n and tunnel diodes 70
Thermal conductance of twisted-layer graphite nanofibers 69
High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions 68
Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations 68
Exploiting Hetero-Junctions to Improve the Performance of III-V Nanowire Tunnel-FETs 66
Nanowire Devices 66
Unidirectional Rashba spin splitting in single layer WS2(1-x)Se2xalloy 65
Effect of dephasing on the current statistics of mesoscopic devices 65
Superconducting proximity effect in interacting quantum dots revealed by shot noise 65
NEGF for 3D Device Simulation of Nanometric Inhomogenities 64
Two-dimensional hole precession in an all-semiconductor spin field effect transistor (art. no. 045304) 64
Full-3D real-space treatment of surface roughness in double gate MOSFETs 64
Full Band Monte Carlo Simulation of Thermal Transport Across Lateral Interface Between 2D Materials 63
Size dependence of surface-roughness-limited mobility in Silicon Nanowire FETs 63
Towards Self-Powered Systems: Using Nanostructures to Harvest Ambient Energy 63
Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter 63
Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs 62
Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy 62
Full-Band Quantum Transport of Heterojunction Electron Devices with Empirical Pseudopotentials 62
Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs 61
Beyond CMOS 61
Tunnel Field‐Effect Transistors Based on III–V Semiconductors 61
Quantum measurement and entropy production 61
Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs 60
Electronic properties of rhombohedrally stacked bilayer WSe2 obtained by chemical vapor deposition 60
Rashba spin precession in quantum-Hall edge channels 60
Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices 59
Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier 59
Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study 59
Theoretical Study of Thermoelectric Properties of SiC Nanowires 59
Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs 59
Totale 9.863
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Categoria #
all - tutte 53.354
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 53.354
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022199 0 0 0 0 3 19 20 13 5 46 58 35
2022/2023258 35 22 3 34 24 62 0 15 34 10 9 10
2023/2024628 20 9 1 0 379 23 13 12 55 61 16 39
2024/20252.993 45 168 176 25 68 211 180 143 296 300 501 880
2025/20264.554 279 477 542 557 643 334 497 142 238 320 341 184
2026/20271.574 118 336 410 625 85 0 0 0 0 0 0 0
Totale 12.391