IRIS
PALA, Marco Giuseppe
 Distribuzione geografica
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Continente #
NA - Nord America 2.153
EU - Europa 433
AS - Asia 106
AF - Africa 46
OC - Oceania 1
Totale 2.739
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Nazione #
US - Stati Uniti d'America 2.145
IT - Italia 145
UA - Ucraina 118
CN - Cina 76
DE - Germania 66
TG - Togo 44
FI - Finlandia 33
IE - Irlanda 30
TR - Turchia 19
SE - Svezia 16
GB - Regno Unito 9
CA - Canada 8
AT - Austria 4
BE - Belgio 4
TW - Taiwan 4
FR - Francia 2
HK - Hong Kong 2
PL - Polonia 2
VN - Vietnam 2
DK - Danimarca 1
EG - Egitto 1
IN - India 1
KR - Corea 1
MD - Moldavia 1
NL - Olanda 1
NZ - Nuova Zelanda 1
RU - Federazione Russa 1
SG - Singapore 1
ZA - Sudafrica 1
Totale 2.739
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Città #
Fairfield 324
Woodbridge 305
Ann Arbor 187
Houston 181
Ashburn 158
Wilmington 125
Seattle 124
Cambridge 117
Chandler 103
Jacksonville 72
Dearborn 62
Lomé 44
Udine 44
Ogden 36
Dublin 30
Beijing 29
Princeton 29
Izmir 18
New York 17
San Diego 15
Hefei 12
Boardman 9
Des Moines 9
Trieste 8
Rome 7
Milan 6
Nanjing 6
Parma 6
Norwalk 5
Brussels 4
Falls Church 4
Indiana 4
Taipei 4
Fuzhou 3
Grafing 3
Montreal 3
Nürnberg 3
Simi Valley 3
Vienna 3
Dong Ket 2
Guangzhou 2
Hong Kong 2
Jinan 2
Kunming 2
Mcallen 2
Nanchang 2
Ottawa 2
Paris 2
Ponzano 2
Rzeszów 2
Secaucus 2
Shaoxing 2
Toronto 2
Zagarolo 2
Agugliano 1
Amsterdam 1
Auckland 1
Cairo 1
Carpi 1
Casarsa della Delizia 1
Changsha 1
Chongqing 1
Codroipo 1
Copenhagen 1
Fayetteville 1
Gebze 1
Hebei 1
Helsinki 1
Jiaxing 1
Johannesburg 1
Langfang 1
Lecce 1
Lexington 1
Los Angeles 1
Montréal 1
Nanning 1
Neubiberg 1
Quzhou 1
Redmond 1
Redwood City 1
Reggio Calabria 1
Saint Petersburg 1
Scafati 1
Scuola 1
Varallo 1
Verona 1
Wenzhou 1
Totale 2.185
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Nome #
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope 172
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs 162
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 156
A review of selected topics in physics based modeling for tunnel field-effect transistors 151
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations 132
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges 123
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors 123
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals 120
Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study 118
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 112
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 112
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides 111
Transport models based on NEGF and empirical pseudopotentials: A computationally viable method for self-consistent simulation of nanoscale devices 109
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 104
Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications 103
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 97
Influence of interface traps on the performance of Tunnel FETs 97
Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading 73
Full band quantum transport modelling with EP and NEGF methods; Application to nanowire transistors 72
Challenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects 68
Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures 59
Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs - Part II: Comparative Analysis and Trap-Induced Variability 57
Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs - Part I: Model Description and Single Trap Analysis in Tunnel-FETs 51
Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices 40
Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism 26
Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application 25
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator 19
Full-Band Quantum Transport of Heterojunction Electron Devices with Empirical Pseudopotentials 16
Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations 15
Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study 13
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off 11
Scanning-Probe Electronic Imaging of Lithographically Patterned Quantum Rings 11
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts 10
Electronic band gap of van der Waals α-As 2 Te 3 crystals 10
Nonlocal Andreev transport through an interacting quantum dot 9
A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies 9
Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes 8
On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations 8
Imaging electron wave functions inside open quantum rings 7
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines 7
A three-dimensional solver of the Schrodinger equation in momentum space for the detailed simulation of nanostructures 7
Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study 7
Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP(111) Heterostructure 7
Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter 7
Full Band Monte Carlo simulation of phonon transfer at interfaces 6
NEGF for 3D Device Simulation of Nanometric Inhomogenities 6
Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices 6
Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations 6
3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity 6
Three-dimensional simulation of single electron transistors 6
Three-dimensional simulation of realistic single electron transistors 6
Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs 6
Towards Self-Powered Systems: Using Nanostructures to Harvest Ambient Energy 6
Quantum Simulation of Silicon-Nanowire FETs 6
Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability 5
Modeling the Influence of Interface Traps on the Transfer Characteristics of In As Tunnel-FETs and MOSFETs 5
Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs 5
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation 5
Exploiting Hetero-Junctions to Improve the Performance of III-V Nanowire Tunnel-FETs 5
Thermal conductance of twisted-layer graphite nanofibers 5
Hybridization and localized flat band in the WSe2/MoSe2heterobilayer 5
A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes 5
Direct observation of highly anisotropic electronic and optical nature in indium telluride 5
High performance WTe2-MoS2in-plane heterojunction Tunnel Field Effect Transistors 5
Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs 5
Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs 5
Full-3D real-space simulation of surface-roughness effects in double-gate MOSFETs 5
Effect of dephasing on the current statistics of mesoscopic devices 5
Full quantum simulation of Shockley-Read-Hall recombination in p-i-n and tunnel diodes 5
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 5
Theoretical Study of Thermoelectric Properties of SiC Nanowires 5
Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs 5
Phonon-assisted transport in van der Waals heterostructure tunnel devices 5
Tunnel Field‐Effect Transistors Based on III–V Semiconductors 5
Modeling study of the mobility in FDSOI devices with a focus on near-spacer-region 4
Unidirectional Rashba spin splitting in single layer WS2(1-x)Se2xalloy 4
Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors 4
High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip‐Enhanced Photoluminescence 4
Electric performance of AlGaN/GaN heterojunction devices: A full-quantum study 4
Backscattering coefficient in gate-all-around 3C-SiC nanowire FETs 4
High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions 4
Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions 4
Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs 4
Universal Rashba spin precession of two-dimensional electrons and holes 4
Superconducting proximity effect in interacting double-dot systems 4
Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3 4
Nanowire Devices 4
VDD scaling of ultra-Thin InAs MOSFETs: A full-quantum study 4
Extraction of parameters of surface states from experimental test structures 4
On the origins of transport inefficiencies in mesoscopic networks 4
Local density of states in mesoscopic samples from scanning gate microscopy 4
Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads 4
α-As2Te3 as a platform for the exploration of the electronic band structure of single layer β-tellurene 4
Spin-orbit coupling and phase coherence in InAs nanowires 4
Decoherence, wave function collapses and non-ordinary statistical mechanics 4
Full-3D real-space treatment of surface roughness in double gate MOSFETs 4
Quenching Statistics of Silicon Single Photon Avalanche Diodes 4
Statistical model of dephasing in mesoscopic devices introduced in the scattering matrix formalism (art. no. 235304) 4
Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier 4
A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect 4
Totale 3.018
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Categoria #
all - tutte 13.967
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 13.967
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201984 0 0 0 0 0 0 0 0 0 0 0 84
2019/2020817 43 52 34 121 66 118 90 89 87 50 32 35
2020/2021445 14 41 61 46 38 49 23 43 45 30 29 26
2021/2022257 16 31 10 8 3 19 19 13 5 45 53 35
2022/2023258 35 22 3 34 24 62 0 15 34 10 9 10
2023/2024589 20 9 1 0 379 23 13 12 55 61 16 0
Totale 3.155