IRIS
PALA, Marco Giuseppe
 Distribuzione geografica
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Continente #
NA - Nord America 4.196
AS - Asia 3.750
EU - Europa 1.365
SA - Sud America 800
AF - Africa 130
OC - Oceania 3
Continente sconosciuto - Info sul continente non disponibili 1
Totale 10.245
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Nazione #
US - Stati Uniti d'America 4.101
SG - Singapore 1.987
BR - Brasile 658
CN - Cina 613
HK - Hong Kong 425
VN - Vietnam 313
IT - Italia 278
DE - Germania 234
RU - Federazione Russa 198
FR - Francia 162
UA - Ucraina 141
KR - Corea 109
FI - Finlandia 87
IN - India 62
GB - Regno Unito 56
AR - Argentina 48
BD - Bangladesh 44
TG - Togo 44
IE - Irlanda 43
CA - Canada 42
NL - Olanda 36
TR - Turchia 34
MX - Messico 29
EC - Ecuador 27
AT - Austria 26
IQ - Iraq 25
ZA - Sudafrica 25
SE - Svezia 24
ID - Indonesia 22
PL - Polonia 21
CO - Colombia 20
PK - Pakistan 18
MA - Marocco 15
ES - Italia 14
UZ - Uzbekistan 12
CL - Cile 11
JP - Giappone 11
VE - Venezuela 11
KE - Kenya 10
PH - Filippine 10
SA - Arabia Saudita 9
UY - Uruguay 9
CR - Costa Rica 8
EG - Egitto 8
TW - Taiwan 8
DO - Repubblica Dominicana 7
NP - Nepal 7
PY - Paraguay 7
DZ - Algeria 6
LT - Lituania 6
BE - Belgio 5
BO - Bolivia 5
IL - Israele 5
JO - Giordania 5
AZ - Azerbaigian 4
GR - Grecia 4
JM - Giamaica 4
KG - Kirghizistan 4
MY - Malesia 4
SI - Slovenia 4
SY - Repubblica araba siriana 4
CH - Svizzera 3
CI - Costa d'Avorio 3
DK - Danimarca 3
ET - Etiopia 3
MD - Moldavia 3
PS - Palestinian Territory 3
TN - Tunisia 3
TT - Trinidad e Tobago 3
AL - Albania 2
GA - Gabon 2
KZ - Kazakistan 2
LB - Libano 2
LK - Sri Lanka 2
LV - Lettonia 2
NG - Nigeria 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
PE - Perù 2
PT - Portogallo 2
RS - Serbia 2
SK - Slovacchia (Repubblica Slovacca) 2
AE - Emirati Arabi Uniti 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BF - Burkina Faso 1
BH - Bahrain 1
CU - Cuba 1
CZ - Repubblica Ceca 1
GF - Guiana Francese 1
GM - Gambi 1
IS - Islanda 1
KH - Cambogia 1
LA - Repubblica Popolare Democratica del Laos 1
MG - Madagascar 1
MK - Macedonia 1
MU - Mauritius 1
OM - Oman 1
PA - Panama 1
RO - Romania 1
Totale 10.237
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Città #
Singapore 718
Hong Kong 417
Ashburn 399
Fairfield 337
Woodbridge 317
San Jose 298
Beijing 242
Houston 194
Ann Arbor 189
Council Bluffs 178
Boardman 153
Lauterbourg 133
Seattle 133
Wilmington 131
Cambridge 123
Hefei 118
Ho Chi Minh City 108
Munich 105
Seoul 105
Chandler 103
Los Angeles 90
Jacksonville 79
Udine 67
Dearborn 65
Redondo Beach 64
São Paulo 63
Santa Clara 62
Hanoi 59
New York 52
The Dalles 48
Dallas 47
Buffalo 45
Helsinki 45
Lomé 44
Dublin 42
Ogden 36
Rio de Janeiro 32
Princeton 29
Brooklyn 24
Frankfurt am Main 23
Orem 23
Amsterdam 19
Curitiba 19
Montreal 19
Atlanta 18
Izmir 18
Düsseldorf 17
San Diego 17
Brasília 16
Vienna 16
Da Nang 15
Haiphong 15
Warsaw 15
Bologna 13
Belo Horizonte 12
Mexico City 12
Boston 11
Des Moines 11
Nuremberg 11
Chicago 10
Dhaka 10
Manchester 10
Modena 10
Nairobi 10
Poplar 10
San Francisco 10
Bogotá 9
Chennai 9
Guayaquil 9
Montevideo 9
Mumbai 9
New Delhi 9
Salvador 9
Shenzhen 9
Columbus 8
Denver 8
Johannesburg 8
London 8
Milan 8
Porto Alegre 8
Rome 8
Stockholm 8
Tashkent 8
Trieste 8
Biên Hòa 7
Guangzhou 7
Guarulhos 7
Hải Dương 7
Nanjing 7
Ribeirão Preto 7
San Michele al Tagliamento 7
Shanghai 7
Taipei 7
Tokyo 7
Belluno 6
Buenos Aires 6
Campinas 6
Hyderabad 6
Limeira 6
Parma 6
Totale 6.142
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Nome #
A review of selected topics in physics based modeling for tunnel field-effect transistors 224
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs 216
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 214
Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement 206
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope 206
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges 206
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations 183
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 172
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 165
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 165
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 156
Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study 156
Transport models based on NEGF and empirical pseudopotentials: A computationally viable method for self-consistent simulation of nanoscale devices 155
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors 153
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides 149
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals 143
Sub-60mV/dec Swing and Drive Current in Dirac-Source FETs: a Design Study based on First-Principle Transport Simulations 133
Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications 133
Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading 131
Influence of interface traps on the performance of Tunnel FETs 125
Challenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects 121
Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application 116
Full band quantum transport modelling with EP and NEGF methods; Application to nanowire transistors 110
Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs - Part II: Comparative Analysis and Trap-Induced Variability 102
Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures 100
Anisotropic flat band and charge density wave in quasi-one-dimensional indium telluride 96
Impact of Interface Traps on the IV Curves of InAs Tunnel-FETs and MOSFETs: A Full Quantum Study 95
A three-dimensional solver of the Schrodinger equation in momentum space for the detailed simulation of nanostructures 91
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off 91
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator 90
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts 90
Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs - Part I: Model Description and Single Trap Analysis in Tunnel-FETs 88
A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies 84
3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity 84
A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect 83
Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism 80
Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs 79
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials 78
A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes 77
Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination 77
Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices 77
Backscattering coefficient in gate-all-around 3C-SiC nanowire FETs 76
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD 71
Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP(111) Heterostructure 71
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation 70
A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs 70
Universal Rashba spin precession of two-dimensional electrons and holes 69
Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs 69
Three-dimensional simulation of realistic single electron transistors 69
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 68
A new transport phenomenon in nanostructures: a mesoscopic analog of the Braess paradox encountered in road networks 68
Scanning-Probe Electronic Imaging of Lithographically Patterned Quantum Rings 66
Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors 64
Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study 63
Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects 61
Full quantum investigation of low field mobility in short-channel Silicon nanowire FETs 61
Full-Band Monte Carlo Study of Hot Carriers for Advection-Diffusion Monte Carlo Simulations 61
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines 60
Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads 60
Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT 59
Full quantum simulation of Shockley-Read-Hall recombination in p-i-n and tunnel diodes 59
Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs 58
Direct observation of highly anisotropic electronic and optical nature in indium telluride 58
Size dependence of surface-roughness-limited mobility in Silicon Nanowire FETs 58
Quantum Simulation of Silicon-Nanowire FETs 58
Imaging electron wave functions inside open quantum rings 57
Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3 57
NEGF for 3D Device Simulation of Nanometric Inhomogenities 57
Effect of dephasing on the current statistics of mesoscopic devices 57
Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations 57
Exploiting Hetero-Junctions to Improve the Performance of III-V Nanowire Tunnel-FETs 56
Thermal conductance of twisted-layer graphite nanofibers 56
Two-dimensional hole precession in an all-semiconductor spin field effect transistor (art. no. 045304) 56
Beyond CMOS 56
Hybridization and localized flat band in the WSe2/MoSe2heterobilayer 55
Nanowire Devices 55
Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study 55
Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter 55
High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions 54
Superconducting proximity effect in interacting quantum dots revealed by shot noise 54
Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations 53
Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy 53
Ab-Initio Transport Study of Source-to-Channel Resistance in Metal-MoS2 Top Contacts Including Image Force Barrier Lowering in a Heterogeneous Dielectric Environment 52
Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs 52
Tunnel Field‐Effect Transistors Based on III–V Semiconductors 52
Quantum measurement and entropy production 52
Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability 51
Extraction of parameters of surface states from experimental test structures 51
Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes 51
Unidirectional Rashba spin splitting in single layer WS2(1-x)Se2xalloy 50
Full Band Monte Carlo Simulation of Thermal Transport Across Lateral Interface Between 2D Materials 50
Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier 50
Rashba spin precession in quantum-Hall edge channels 50
Full-Band Quantum Transport of Heterojunction Electron Devices with Empirical Pseudopotentials 50
Modeling the effects of dephasing on mesoscopic noise 49
Full-3D real-space treatment of surface roughness in double gate MOSFETs 48
Theoretical Study of Thermoelectric Properties of SiC Nanowires 48
Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs 48
Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs 48
On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations 48
Totale 8.690
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Categoria #
all - tutte 45.430
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 45.430
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202127 0 0 0 0 0 0 0 0 0 0 0 27
2021/2022265 16 32 10 8 3 19 20 13 5 46 58 35
2022/2023258 35 22 3 34 24 62 0 15 34 10 9 10
2023/2024628 20 9 1 0 379 23 13 12 55 61 16 39
2024/20252.993 45 168 176 25 68 211 180 143 296 300 501 880
2025/20264.448 279 477 542 557 643 334 497 142 238 320 341 78
Totale 10.711