IRIS
PALA, Marco Giuseppe
 Distribuzione geografica
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Continente #
NA - Nord America 3.249
AS - Asia 3.127
EU - Europa 1.145
SA - Sud America 751
AF - Africa 108
OC - Oceania 3
Continente sconosciuto - Info sul continente non disponibili 1
Totale 8.384
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Nazione #
US - Stati Uniti d'America 3.175
SG - Singapore 1.732
BR - Brasile 631
CN - Cina 481
HK - Hong Kong 399
IT - Italia 260
VN - Vietnam 226
DE - Germania 221
RU - Federazione Russa 197
UA - Ucraina 131
KR - Corea 107
FI - Finlandia 81
GB - Regno Unito 49
TG - Togo 44
AR - Argentina 43
IE - Irlanda 42
IN - India 38
CA - Canada 33
TR - Turchia 29
NL - Olanda 28
AT - Austria 25
BD - Bangladesh 24
MX - Messico 24
SE - Svezia 24
ZA - Sudafrica 23
EC - Ecuador 21
FR - Francia 21
PL - Polonia 21
CO - Colombia 18
ID - Indonesia 16
ES - Italia 12
IQ - Iraq 11
CL - Cile 10
MA - Marocco 10
KE - Kenya 9
PK - Pakistan 8
UY - Uruguay 8
VE - Venezuela 8
DO - Repubblica Dominicana 6
EG - Egitto 6
LT - Lituania 6
PY - Paraguay 6
TW - Taiwan 6
IL - Israele 5
PH - Filippine 5
UZ - Uzbekistan 5
AZ - Azerbaigian 4
BE - Belgio 4
GR - Grecia 4
JP - Giappone 4
NP - Nepal 4
BO - Bolivia 3
CI - Costa d'Avorio 3
CR - Costa Rica 3
DK - Danimarca 3
JM - Giamaica 3
JO - Giordania 3
KG - Kirghizistan 3
TN - Tunisia 3
TT - Trinidad e Tobago 3
AE - Emirati Arabi Uniti 2
AL - Albania 2
GA - Gabon 2
LK - Sri Lanka 2
LV - Lettonia 2
MD - Moldavia 2
MY - Malesia 2
NZ - Nuova Zelanda 2
PE - Perù 2
PS - Palestinian Territory 2
RS - Serbia 2
SA - Arabia Saudita 2
SK - Slovacchia (Repubblica Slovacca) 2
SY - Repubblica araba siriana 2
AU - Australia 1
BA - Bosnia-Erzegovina 1
BF - Burkina Faso 1
BH - Bahrain 1
CH - Svizzera 1
CU - Cuba 1
CZ - Repubblica Ceca 1
DZ - Algeria 1
GF - Guiana Francese 1
GM - Gambi 1
IS - Islanda 1
KH - Cambogia 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
MU - Mauritius 1
NG - Nigeria 1
NO - Norvegia 1
PA - Panama 1
PT - Portogallo 1
RW - Ruanda 1
TZ - Tanzania 1
XK - ???statistics.table.value.countryCode.XK??? 1
YT - Mayotte 1
Totale 8.384
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Città #
Singapore 640
Hong Kong 398
Fairfield 324
Ashburn 313
Woodbridge 305
Beijing 218
Ann Arbor 187
Houston 185
Boardman 153
Seattle 130
Wilmington 125
Cambridge 119
Hefei 117
Munich 105
Seoul 104
Chandler 103
Ho Chi Minh City 90
Los Angeles 81
Jacksonville 73
Udine 65
Redondo Beach 64
Dearborn 62
São Paulo 58
New York 48
Dallas 46
Buffalo 45
Lomé 44
Dublin 42
Helsinki 41
Hanoi 38
Ogden 36
Rio de Janeiro 31
Santa Clara 30
Princeton 29
The Dalles 24
Curitiba 19
Izmir 18
Montreal 18
Brooklyn 17
Düsseldorf 17
Amsterdam 16
Brasília 16
San Diego 15
Vienna 15
Warsaw 15
Bologna 13
Frankfurt am Main 13
Belo Horizonte 12
Atlanta 11
Haiphong 11
Nuremberg 11
Orem 11
Boston 10
Mexico City 10
Modena 10
Poplar 10
Des Moines 9
Nairobi 9
Salvador 9
Bogotá 8
Chennai 8
Milan 8
Montevideo 8
Rome 8
San Francisco 8
Stockholm 8
Trieste 8
Columbus 7
Da Nang 7
Denver 7
Dhaka 7
Johannesburg 7
Mumbai 7
Nanjing 7
Porto Alegre 7
San Michele al Tagliamento 7
Shenzhen 7
Belluno 6
Biên Hòa 6
Campinas 6
Chicago 6
Guangzhou 6
Guarulhos 6
Guayaquil 6
Hyderabad 6
Limeira 6
London 6
Manchester 6
New Delhi 6
Parma 6
Taipei 6
Buenos Aires 5
Charlotte 5
Hải Dương 5
Manaus 5
Norwalk 5
Querétaro 5
Ribeirão Preto 5
São José 5
Uberlândia 5
Totale 5.051
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Nome #
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 205
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs 204
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope 201
A review of selected topics in physics based modeling for tunnel field-effect transistors 201
Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement 195
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges 189
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations 171
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 156
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 153
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 149
Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study 149
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 146
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors 146
Transport models based on NEGF and empirical pseudopotentials: A computationally viable method for self-consistent simulation of nanoscale devices 144
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides 139
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals 138
Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications 125
Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading 122
Influence of interface traps on the performance of Tunnel FETs 115
Challenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects 110
Sub-60mV/dec Swing and Drive Current in Dirac-Source FETs: a Design Study based on First-Principle Transport Simulations 103
Full band quantum transport modelling with EP and NEGF methods; Application to nanowire transistors 99
Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application 99
Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs - Part II: Comparative Analysis and Trap-Induced Variability 95
Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures 92
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off 81
Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs - Part I: Model Description and Single Trap Analysis in Tunnel-FETs 77
Anisotropic flat band and charge density wave in quasi-one-dimensional indium telluride 75
A three-dimensional solver of the Schrodinger equation in momentum space for the detailed simulation of nanostructures 72
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts 72
Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism 72
A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies 71
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator 71
A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect 71
3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity 69
Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices 66
Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination 65
Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs 64
A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes 63
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials 62
Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs 60
Backscattering coefficient in gate-all-around 3C-SiC nanowire FETs 59
Universal Rashba spin precession of two-dimensional electrons and holes 57
A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs 57
Scanning-Probe Electronic Imaging of Lithographically Patterned Quantum Rings 56
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 55
Three-dimensional simulation of realistic single electron transistors 55
A new transport phenomenon in nanostructures: a mesoscopic analog of the Braess paradox encountered in road networks 55
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD 54
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation 53
Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads 53
Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors 50
Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT 50
Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP(111) Heterostructure 50
Full quantum simulation of Shockley-Read-Hall recombination in p-i-n and tunnel diodes 49
Imaging electron wave functions inside open quantum rings 48
Direct observation of highly anisotropic electronic and optical nature in indium telluride 48
Full quantum investigation of low field mobility in short-channel Silicon nanowire FETs 48
Effect of dephasing on the current statistics of mesoscopic devices 48
Thermal conductance of twisted-layer graphite nanofibers 47
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines 46
Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects 46
Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study 46
Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study 46
NEGF for 3D Device Simulation of Nanometric Inhomogenities 45
Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter 45
Exploiting Hetero-Junctions to Improve the Performance of III-V Nanowire Tunnel-FETs 44
Full-Band Monte Carlo Study of Hot Carriers for Advection-Diffusion Monte Carlo Simulations 44
Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy 44
Beyond CMOS 44
Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations 44
Quantum measurement and entropy production 44
Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations 43
Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs 43
Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability 42
Nanowire Devices 42
Superconducting proximity effect in interacting quantum dots revealed by shot noise 42
Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs 41
Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3 41
Two-dimensional hole precession in an all-semiconductor spin field effect transistor (art. no. 045304) 41
Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier 41
Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs 41
Size dependence of surface-roughness-limited mobility in Silicon Nanowire FETs 41
Rashba spin precession in quantum-Hall edge channels 41
Quantum Simulation of Silicon-Nanowire FETs 41
Spin-orbit coupling and phase coherence in InAs nanowires 40
On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations 40
Tunnel Field‐Effect Transistors Based on III–V Semiconductors 40
Three-dimensional simulation of single electron transistors 39
Full-Band Quantum Transport of Heterojunction Electron Devices with Empirical Pseudopotentials 39
Suppression of weak antilocalization in GaxIn1-xAs/InP narrow quantum wires 39
High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions 38
Full-3D real-space treatment of surface roughness in double gate MOSFETs 38
Electronic band gap of van der Waals α-As 2 Te 3 crystals 38
Locating an individual quantum hall island inside a quantum ring 38
Modeling the effects of dephasing on mesoscopic noise 38
Modeling the Influence of Interface Traps on the Transfer Characteristics of In As Tunnel-FETs and MOSFETs 37
Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions 37
Towards the thermodynamics of localization processes 37
Unidirectional Rashba spin splitting in single layer WS2(1-x)Se2xalloy 36
Totale 7.401
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Categoria #
all - tutte 40.435
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 40.435
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021245 0 0 0 0 0 49 23 43 45 30 29 26
2021/2022257 16 31 10 8 3 19 19 13 5 45 53 35
2022/2023258 35 22 3 34 24 62 0 15 34 10 9 10
2023/2024628 20 9 1 0 379 23 13 12 55 61 16 39
2024/20252.993 45 168 176 25 68 211 180 143 296 300 501 880
2025/20262.659 279 477 542 557 643 161 0 0 0 0 0 0
Totale 8.846