IRIS
PALA, Marco Giuseppe
 Distribuzione geografica
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Continente #
NA - Nord America 4.773
AS - Asia 3.802
EU - Europa 1.407
SA - Sud America 826
Continente sconosciuto - Info sul continente non disponibili 469
AF - Africa 132
OC - Oceania 3
Totale 11.412
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Nazione #
US - Stati Uniti d'America 4.649
SG - Singapore 1.996
BR - Brasile 668
CN - Cina 631
HK - Hong Kong 432
VN - Vietnam 316
IT - Italia 313
DE - Germania 235
RU - Federazione Russa 198
FR - Francia 162
UA - Ucraina 141
KR - Corea 109
FI - Finlandia 88
IN - India 63
GB - Regno Unito 56
CA - Canada 55
AR - Argentina 48
BD - Bangladesh 48
TG - Togo 44
IE - Irlanda 43
NL - Olanda 37
TR - Turchia 34
EC - Ecuador 32
MX - Messico 30
CO - Colombia 29
AT - Austria 26
ZA - Sudafrica 26
IQ - Iraq 25
SE - Svezia 24
ID - Indonesia 22
PL - Polonia 21
PK - Pakistan 18
ES - Italia 17
MA - Marocco 15
PH - Filippine 12
UZ - Uzbekistan 12
CL - Cile 11
CR - Costa Rica 11
JP - Giappone 11
KE - Kenya 11
VE - Venezuela 11
SA - Arabia Saudita 10
UY - Uruguay 10
EG - Egitto 8
MY - Malesia 8
NP - Nepal 8
TW - Taiwan 8
DO - Repubblica Dominicana 7
PY - Paraguay 7
DZ - Algeria 6
JM - Giamaica 6
LT - Lituania 6
BE - Belgio 5
BO - Bolivia 5
IL - Israele 5
JO - Giordania 5
PR - Porto Rico 5
AZ - Azerbaigian 4
DK - Danimarca 4
GR - Grecia 4
KG - Kirghizistan 4
KZ - Kazakistan 4
SI - Slovenia 4
SY - Repubblica araba siriana 4
CH - Svizzera 3
CI - Costa d'Avorio 3
ET - Etiopia 3
MD - Moldavia 3
PE - Perù 3
PS - Palestinian Territory 3
TN - Tunisia 3
TT - Trinidad e Tobago 3
AL - Albania 2
GA - Gabon 2
LB - Libano 2
LK - Sri Lanka 2
LV - Lettonia 2
NG - Nigeria 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
PT - Portogallo 2
RS - Serbia 2
SK - Slovacchia (Repubblica Slovacca) 2
AE - Emirati Arabi Uniti 1
AU - Australia 1
BA - Bosnia-Erzegovina 1
BB - Barbados 1
BF - Burkina Faso 1
BH - Bahrain 1
BS - Bahamas 1
CU - Cuba 1
CZ - Repubblica Ceca 1
GF - Guiana Francese 1
GM - Gambi 1
GT - Guatemala 1
HN - Honduras 1
IS - Islanda 1
KH - Cambogia 1
LA - Repubblica Popolare Democratica del Laos 1
MG - Madagascar 1
Totale 10.930
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Città #
Singapore 722
Ashburn 433
Hong Kong 424
Fairfield 337
San Jose 325
Council Bluffs 321
Woodbridge 317
Beijing 248
Boardman 209
Houston 196
Ann Arbor 189
Seattle 137
Lauterbourg 133
Wilmington 133
Cambridge 123
Hefei 118
Ho Chi Minh City 108
Munich 105
Seoul 105
Chandler 103
Los Angeles 97
Santa Clara 90
Jacksonville 80
Udine 67
Dearborn 65
Redondo Beach 64
São Paulo 63
Hanoi 60
New York 55
Dallas 49
Buffalo 48
The Dalles 48
Helsinki 45
Lomé 44
Dublin 42
Ogden 36
Rio de Janeiro 32
Phoenix 29
Princeton 29
Brooklyn 27
Frankfurt am Main 24
Orem 23
Atlanta 21
Amsterdam 19
Curitiba 19
Montreal 19
San Diego 19
Izmir 18
Brasília 17
Düsseldorf 17
Vienna 16
Da Nang 15
Haiphong 15
Warsaw 15
Bologna 14
Chicago 14
Bogotá 13
Dhaka 13
Belo Horizonte 12
Boston 12
Des Moines 12
Mexico City 12
Milan 12
San Francisco 12
Manchester 11
Nairobi 11
Nuremberg 11
Guayaquil 10
Modena 10
Poplar 10
Chennai 9
Montevideo 9
Mumbai 9
New Delhi 9
Salvador 9
San José 9
Shanghai 9
Shenzhen 9
Columbus 8
Denver 8
Johannesburg 8
London 8
Porto Alegre 8
Rome 8
Stockholm 8
Tashkent 8
Trieste 8
Biên Hòa 7
Guangzhou 7
Guarulhos 7
Hải Dương 7
Irvine 7
Nanjing 7
Ribeirão Preto 7
San Michele al Tagliamento 7
Taipei 7
Tokyo 7
Belluno 6
Buenos Aires 6
Campinas 6
Totale 6.534
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Nome #
A review of selected topics in physics based modeling for tunnel field-effect transistors 228
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs 221
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 218
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges 212
Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement 211
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope 210
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations 184
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 177
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 170
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 168
Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study 161
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 160
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors 159
Transport models based on NEGF and empirical pseudopotentials: A computationally viable method for self-consistent simulation of nanoscale devices 158
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides 156
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals 151
Sub-60mV/dec Swing and Drive Current in Dirac-Source FETs: a Design Study based on First-Principle Transport Simulations 149
Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications 139
Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading 135
Influence of interface traps on the performance of Tunnel FETs 128
Challenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects 126
Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application 122
Full band quantum transport modelling with EP and NEGF methods; Application to nanowire transistors 114
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off 113
Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs - Part II: Comparative Analysis and Trap-Induced Variability 107
Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures 103
Anisotropic flat band and charge density wave in quasi-one-dimensional indium telluride 101
Impact of Interface Traps on the IV Curves of InAs Tunnel-FETs and MOSFETs: A Full Quantum Study 100
A three-dimensional solver of the Schrodinger equation in momentum space for the detailed simulation of nanostructures 99
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts 96
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator 95
Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs - Part I: Model Description and Single Trap Analysis in Tunnel-FETs 95
3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity 90
A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect 89
A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies 87
Backscattering coefficient in gate-all-around 3C-SiC nanowire FETs 84
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials 82
Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination 82
Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs 81
Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices 81
Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism 81
A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes 80
A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs 77
Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors 75
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation 75
Universal Rashba spin precession of two-dimensional electrons and holes 75
Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP(111) Heterostructure 75
Three-dimensional simulation of realistic single electron transistors 74
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD 73
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 73
A new transport phenomenon in nanostructures: a mesoscopic analog of the Braess paradox encountered in road networks 73
Scanning-Probe Electronic Imaging of Lithographically Patterned Quantum Rings 70
Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs 70
Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study 69
Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT 68
Imaging electron wave functions inside open quantum rings 67
Direct observation of highly anisotropic electronic and optical nature in indium telluride 66
Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs 65
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines 65
Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects 65
Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads 64
Full-Band Monte Carlo Study of Hot Carriers for Advection-Diffusion Monte Carlo Simulations 64
Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations 64
High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions 63
Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3 63
Full quantum investigation of low field mobility in short-channel Silicon nanowire FETs 63
NEGF for 3D Device Simulation of Nanometric Inhomogenities 62
Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations 62
Full quantum simulation of Shockley-Read-Hall recombination in p-i-n and tunnel diodes 62
Quantum Simulation of Silicon-Nanowire FETs 62
Thermal conductance of twisted-layer graphite nanofibers 61
Effect of dephasing on the current statistics of mesoscopic devices 61
Size dependence of surface-roughness-limited mobility in Silicon Nanowire FETs 61
Hybridization and localized flat band in the WSe2/MoSe2heterobilayer 60
Two-dimensional hole precession in an all-semiconductor spin field effect transistor (art. no. 045304) 60
Ab-Initio Transport Study of Source-to-Channel Resistance in Metal-MoS2 Top Contacts Including Image Force Barrier Lowering in a Heterogeneous Dielectric Environment 60
Unidirectional Rashba spin splitting in single layer WS2(1-x)Se2xalloy 59
Exploiting Hetero-Junctions to Improve the Performance of III-V Nanowire Tunnel-FETs 59
Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy 59
Nanowire Devices 58
Beyond CMOS 58
Full-Band Quantum Transport of Heterojunction Electron Devices with Empirical Pseudopotentials 58
Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter 58
Superconducting proximity effect in interacting quantum dots revealed by shot noise 57
Tunnel Field‐Effect Transistors Based on III–V Semiconductors 57
Full Band Monte Carlo Simulation of Thermal Transport Across Lateral Interface Between 2D Materials 56
Full-3D real-space treatment of surface roughness in double gate MOSFETs 56
Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs 56
Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study 56
Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability 55
Extraction of parameters of surface states from experimental test structures 54
Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier 54
Rashba spin precession in quantum-Hall edge channels 54
Towards Self-Powered Systems: Using Nanostructures to Harvest Ambient Energy 54
Modeling the effects of dephasing on mesoscopic noise 54
Quantum measurement and entropy production 54
Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes 53
Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs 52
Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs 52
Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs 51
Totale 9.204
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Categoria #
all - tutte 49.639
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 49.639
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022217 0 0 10 8 3 19 20 13 5 46 58 35
2022/2023258 35 22 3 34 24 62 0 15 34 10 9 10
2023/2024628 20 9 1 0 379 23 13 12 55 61 16 39
2024/20252.993 45 168 176 25 68 211 180 143 296 300 501 880
2025/20264.554 279 477 542 557 643 334 497 142 238 320 341 184
2026/2027595 118 336 141 0 0 0 0 0 0 0 0 0
Totale 11.412