IRIS
PALA, Marco Giuseppe
 Distribuzione geografica
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Continente #
NA - Nord America 2.363
EU - Europa 454
AS - Asia 290
AF - Africa 46
OC - Oceania 1
SA - Sud America 1
Totale 3.155
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Nazione #
US - Stati Uniti d'America 2.355
SG - Singapore 159
IT - Italia 151
UA - Ucraina 118
CN - Cina 98
DE - Germania 69
TG - Togo 44
FI - Finlandia 36
IE - Irlanda 33
TR - Turchia 19
SE - Svezia 16
GB - Regno Unito 9
CA - Canada 8
NL - Olanda 7
IN - India 5
AT - Austria 4
BE - Belgio 4
TW - Taiwan 4
FR - Francia 2
HK - Hong Kong 2
PL - Polonia 2
VN - Vietnam 2
BR - Brasile 1
DK - Danimarca 1
EG - Egitto 1
KR - Corea 1
MD - Moldavia 1
NZ - Nuova Zelanda 1
RU - Federazione Russa 1
ZA - Sudafrica 1
Totale 3.155
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Città #
Fairfield 324
Woodbridge 305
Ann Arbor 187
Houston 181
Ashburn 158
Boardman 153
Singapore 142
Wilmington 125
Seattle 124
Cambridge 117
Chandler 103
Jacksonville 72
Dearborn 62
Udine 46
Lomé 44
Ogden 36
Dublin 33
Beijing 30
Princeton 29
Izmir 18
New York 17
San Diego 15
Santa Clara 15
Hefei 12
Des Moines 9
Trieste 8
Amsterdam 7
Nanjing 7
Rome 7
Milan 6
Parma 6
Shenzhen 6
Norwalk 5
Brussels 4
Falls Church 4
Fuzhou 4
Hyderabad 4
Indiana 4
Taipei 4
Grafing 3
Guangzhou 3
Lappeenranta 3
Montreal 3
Nürnberg 3
Simi Valley 3
Vienna 3
Dallas 2
Dong Ket 2
Hong Kong 2
Jinan 2
Kunming 2
Mcallen 2
Nanchang 2
Ottawa 2
Paris 2
Ponzano 2
Rzeszów 2
Secaucus 2
Shanghai 2
Shaoxing 2
Shijiazhuang 2
Toronto 2
Zagarolo 2
Agugliano 1
Auckland 1
Cairo 1
Carpi 1
Casarsa della Delizia 1
Catania 1
Changsha 1
Chicago 1
Chongqing 1
Civitella in Val di Chiana 1
Codroipo 1
Copenhagen 1
Düsseldorf 1
Fayetteville 1
Gebze 1
Hebei 1
Helsinki 1
Jiaxing 1
Johannesburg 1
Langfang 1
Lecce 1
Lexington 1
Los Angeles 1
Montréal 1
Nanning 1
Neubiberg 1
Quzhou 1
Redmond 1
Redwood City 1
Reggio Calabria 1
Rio de Janeiro 1
Saint Petersburg 1
Scafati 1
Scuola 1
Varallo 1
Verona 1
Vittorio Veneto 1
Totale 2.525
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Nome #
Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope 176
Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs 168
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 159
A review of selected topics in physics based modeling for tunnel field-effect transistors 155
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations 136
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges 128
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors 125
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals 122
Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study 122
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 116
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 116
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides 114
Transport models based on NEGF and empirical pseudopotentials: A computationally viable method for self-consistent simulation of nanoscale devices 114
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 108
Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications 106
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 103
Influence of interface traps on the performance of Tunnel FETs 100
Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading 76
Full band quantum transport modelling with EP and NEGF methods; Application to nanowire transistors 74
Challenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects 71
Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures 62
Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs - Part II: Comparative Analysis and Trap-Induced Variability 59
Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs - Part I: Model Description and Single Trap Analysis in Tunnel-FETs 53
Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices 42
Anisotropic flat band and charge density wave in quasi-one-dimensional indium telluride 33
Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism 29
Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application 27
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator 24
A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies 22
Full-Band Quantum Transport of Heterojunction Electron Devices with Empirical Pseudopotentials 19
Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations 18
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts 17
A three-dimensional solver of the Schrodinger equation in momentum space for the detailed simulation of nanostructures 14
Scanning-Probe Electronic Imaging of Lithographically Patterned Quantum Rings 14
3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity 14
Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study 14
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off 13
A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs 13
Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination 13
Electronic band gap of van der Waals α-As 2 Te 3 crystals 12
Modeling of SPAD avalanche breakdown probability and jitter tail with field lines 11
A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect 11
Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs 11
Imaging electron wave functions inside open quantum rings 10
Backscattering coefficient in gate-all-around 3C-SiC nanowire FETs 10
Nonlocal Andreev transport through an interacting quantum dot 10
A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes 10
Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study 10
Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations 10
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials 10
On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations 10
A new transport phenomenon in nanostructures: a mesoscopic analog of the Braess paradox encountered in road networks 10
Full Band Monte Carlo simulation of phonon transfer at interfaces 9
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation 9
Thermal conductance of twisted-layer graphite nanofibers 9
Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes 9
Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP(111) Heterostructure 9
Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter 9
Tunnel Field‐Effect Transistors Based on III–V Semiconductors 9
Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability 8
Modeling the Influence of Interface Traps on the Transfer Characteristics of In As Tunnel-FETs and MOSFETs 8
High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip‐Enhanced Photoluminescence 8
Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions 8
Exploiting Hetero-Junctions to Improve the Performance of III-V Nanowire Tunnel-FETs 8
Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3 8
Hybridization and localized flat band in the WSe2/MoSe2heterobilayer 8
NEGF for 3D Device Simulation of Nanometric Inhomogenities 8
Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices 8
Direct observation of highly anisotropic electronic and optical nature in indium telluride 8
Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs 8
Effect of dephasing on the current statistics of mesoscopic devices 8
Full quantum simulation of Shockley-Read-Hall recombination in p-i-n and tunnel diodes 8
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 8
Theoretical Study of Thermoelectric Properties of SiC Nanowires 8
Scanning gate spectroscopy of transport across a quantum Hall nano-island 8
Three-dimensional simulation of realistic single electron transistors 8
Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs 8
Towards Self-Powered Systems: Using Nanostructures to Harvest Ambient Energy 8
Quantum Simulation of Silicon-Nanowire FETs 8
Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors 7
Superconducting proximity effect in interacting double-dot systems 7
Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT 7
Two-dimensional hole precession in an all-semiconductor spin field effect transistor (art. no. 045304) 7
Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs 7
Full-3D real-space simulation of surface-roughness effects in double-gate MOSFETs 7
Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs 7
Three-dimensional simulation of single electron transistors 7
Phonon-assisted transport in van der Waals heterostructure tunnel devices 7
Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride 7
Modeling study of the mobility in FDSOI devices with a focus on near-spacer-region 6
Unidirectional Rashba spin splitting in single layer WS2(1-x)Se2xalloy 6
Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs 6
Electric performance of AlGaN/GaN heterojunction devices: A full-quantum study 6
High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions 6
Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs 6
Universal Rashba spin precession of two-dimensional electrons and holes 6
Nanowire Devices 6
VDD scaling of ultra-Thin InAs MOSFETs: A full-quantum study 6
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD 6
High performance WTe2-MoS2in-plane heterojunction Tunnel Field Effect Transistors 6
Totale 3.383
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Categoria #
all - tutte 18.318
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 18.318
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020722 0 0 34 121 66 118 90 89 87 50 32 35
2020/2021445 14 41 61 46 38 49 23 43 45 30 29 26
2021/2022257 16 31 10 8 3 19 19 13 5 45 53 35
2022/2023258 35 22 3 34 24 62 0 15 34 10 9 10
2023/2024628 20 9 1 0 379 23 13 12 55 61 16 39
2024/2025383 45 168 170 0 0 0 0 0 0 0 0 0
Totale 3.577