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EnglishWe present a study about of the essential physical elements governing the OFF-state current in MOSFETs and tunnel FETs at truly nanoscale dimensions. By combining semianalytical models and full-quantum self-consistent simulations, we discuss the physical mechanisms responsible of the minimum OFF-current and of the ambipolarity of the current transfer characteristics. Moreover, we revisit the applicability of the natural transistor length as a metric for the shortchannel effects and assess the tunnel FETs potential to provide subthreshold swings below 60 mV/decade and better than their MOSFET counterparts for gate lengths approaching 10 nm.
| Titolo: | Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs |
| Autori: | |
| Data di pubblicazione: | 2015 |
| Rivista: | |
| Abstract: | We present a study about of the essential physical elements governing the OFF-state current in MOSFETs and tunnel FETs at truly nanoscale dimensions. By combining semianalytical models and full-quantum self-consistent simulations, we discuss the physical mechanisms responsible of the minimum OFF-current and of the ambipolarity of the current transfer characteristics. Moreover, we revisit the applicability of the natural transistor length as a metric for the shortchannel effects and assess the tunnel FETs potential to provide subthreshold swings below 60 mV/decade and better than their MOSFET counterparts for gate lengths approaching 10 nm. |
| Handle: | http://hdl.handle.net/11390/1070653 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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