CINECA IRIS Institutional Research Information System
IRIS è la piattaforma adottata dall’Università degli Studi di Udine per gestire l’archivio aperto dei prodotti della ricerca. L’archivio contiene articoli, contributi in volume, monografie, interventi pubblicati in atti di convegno, Tesi di dottorato e altri materiali.
EnglishWe present a study about of the essential physical elements governing the OFF-state current in MOSFETs and tunnel FETs at truly nanoscale dimensions. By combining semianalytical models and full-quantum self-consistent simulations, we discuss the physical mechanisms responsible of the minimum OFF-current and of the ambipolarity of the current transfer characteristics. Moreover, we revisit the applicability of the natural transistor length as a metric for the shortchannel effects and assess the tunnel FETs potential to provide subthreshold swings below 60 mV/decade and better than their MOSFET counterparts for gate lengths approaching 10 nm.
| Titolo: | Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs | |
| Autori: | ||
| Data di pubblicazione: | 2015 | |
| Rivista: | ||
| Abstract: | We present a study about of the essential physical elements governing the OFF-state current in MOSFETs and tunnel FETs at truly nanoscale dimensions. By combining semianalytical models and full-quantum self-consistent simulations, we discuss the physical mechanisms responsible of the minimum OFF-current and of the ambipolarity of the current transfer characteristics. Moreover, we revisit the applicability of the natural transistor length as a metric for the shortchannel effects and assess the tunnel FETs potential to provide subthreshold swings below 60 mV/decade and better than their MOSFET counterparts for gate lengths approaching 10 nm. | |
| Handle: | http://hdl.handle.net/11390/1070653 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11390/1070653
Copyright © 2021