We propose a model Hamiltonian for van der Waals tunnel transistors (vdW-TFETs) relying on few physical parameters calibrated against density functional theory (DFT) band structure calculations. Based on this model, we develop a fully 3-D nonequilibrium Green’s function simulator including electron-phonon scattering, and we investigate some fundamental aspects and design challenges related to vdW-TFETs based on single-layer MoS2 and WTe2. In particular, we devote a specific analysis to the impact of top gate alignment and back-oxide thickness on the device performance. Our results suggest that the vdW-TFETs can provide very small values of subthreshold swing (SS) and fairly good ON-state current. However, these devices also pose specific design challenges related to the geometrical features of gated regions, and their ultimate SS may be lower limited by inelastic phonon scattering.

Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study

ESSENI, David
2016

Abstract

We propose a model Hamiltonian for van der Waals tunnel transistors (vdW-TFETs) relying on few physical parameters calibrated against density functional theory (DFT) band structure calculations. Based on this model, we develop a fully 3-D nonequilibrium Green’s function simulator including electron-phonon scattering, and we investigate some fundamental aspects and design challenges related to vdW-TFETs based on single-layer MoS2 and WTe2. In particular, we devote a specific analysis to the impact of top gate alignment and back-oxide thickness on the device performance. Our results suggest that the vdW-TFETs can provide very small values of subthreshold swing (SS) and fairly good ON-state current. However, these devices also pose specific design challenges related to the geometrical features of gated regions, and their ultimate SS may be lower limited by inelastic phonon scattering.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11390/1100276
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