This paper extends the analysis of the companion paper by presenting a comparative analysis of the impact of interface traps on the I–V characteristics of InAs nanowire tunnel FETs or MOSFETs with a spatially random distribution of traps. The physical mechanisms behind the effects of traps in either tunnel FETs or MOSFETs are compared and, furthermore, traps are also investigated as a possible source of device variability. Our results show that, in MOSFETs, an aggressive oxide thickness scaling can effectively counteract the degradation of the subthreshold slope (SS) possibly produced by interface traps. Tunnel FETs are instead more vulnerable to traps, which are probably the main hindrance to the experimental realization of tunnel FETs with an SS better than 60 mV/decade.

Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs - Part II: Comparative Analysis and Trap-Induced Variability

ESSENI, David;Marco G. Pala
2013-01-01

Abstract

This paper extends the analysis of the companion paper by presenting a comparative analysis of the impact of interface traps on the I–V characteristics of InAs nanowire tunnel FETs or MOSFETs with a spatially random distribution of traps. The physical mechanisms behind the effects of traps in either tunnel FETs or MOSFETs are compared and, furthermore, traps are also investigated as a possible source of device variability. Our results show that, in MOSFETs, an aggressive oxide thickness scaling can effectively counteract the degradation of the subthreshold slope (SS) possibly produced by interface traps. Tunnel FETs are instead more vulnerable to traps, which are probably the main hindrance to the experimental realization of tunnel FETs with an SS better than 60 mV/decade.
File in questo prodotto:
File Dimensione Formato  
Esseni_TED2013.pdf

non disponibili

Tipologia: Documento in Post-print
Licenza: Non pubblico
Dimensione 1.16 MB
Formato Adobe PDF
1.16 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/904947
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 56
  • ???jsp.display-item.citation.isi??? 49
social impact