We present a self-consistent quantum simulation of an MoS2-WTe2 inter-layer Tunnel Field-Effect Transistor (TFET). Our calculations are based on the non-equilibrium Green's function (NEGF) formalism with electron-phonon scattering, and accurately account for the device electrostatics by a self-consistent coupling to the Poisson equation. Our results predict an extremely steep sub-threshold swing (SS<30mV/dec), which is also robust against the channel-length scaling for a carefully designed structure.
Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals
Marco Pala;ESSENI, David
2015-01-01
Abstract
We present a self-consistent quantum simulation of an MoS2-WTe2 inter-layer Tunnel Field-Effect Transistor (TFET). Our calculations are based on the non-equilibrium Green's function (NEGF) formalism with electron-phonon scattering, and accurately account for the device electrostatics by a self-consistent coupling to the Poisson equation. Our results predict an extremely steep sub-threshold swing (SS<30mV/dec), which is also robust against the channel-length scaling for a carefully designed structure.File in questo prodotto:
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