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1.1 Articolo in rivista: [46066] Home page tipologia

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Prodotti della tipologia (ordinati per Data di deposito in Decrescente ordine): 6.841 a 6.860 di 46.066
Titolo Data di pubblicazione Autore(i) File
On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations 1-gen-2011 Sellier, H; Hackens, B; Pala, M; Martins, F; Baltazar, S; Wallart, X; Desplanque, L; Bayot, V; Huant, S
Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs 1-gen-2009 Pala, M; Buran, C; Poli, S; Mouis, M
Imaging Coulomb islands in a quantum Hall interferometer 1-gen-2010 Hackens, B; Martins, F; Faniel, S; Dutu, Ca; Sellier, H; Huant, S; Pala, M; Desplanque, L; Wallart, X; Bayot, V
Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs 1-gen-2018 Logoteta, D; Cavassilas, N; Cresti, A; Pala, M; Bescond, M
A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs 1-gen-2011 Cresti, A; Pala, M; Poli, S; Mouis, M; Ghibaudo, G
Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs 1-gen-2009 Rogdakis, K; Poli, S; Bano, E; Zekentes, K; Pala, M
Scanning gate spectroscopy of transport across a quantum Hall nano-island 1-gen-2013 Martins, F; Faniel, S; Rosenow, B; Pala, M; Sellier, H; Huant, S; Desplanque, L; Wallart, X; Bayot, V; Hackens, B
Spin-orbit coupling and phase coherence in InAs nanowires 1-gen-2010 Hernandez, Se; Akabori, M; Sladek, K; Volk, C; Alagha, S; Hardtdegen, H; Pala, M; Demarina, N; Gruetzmacher, D; Schaepers, T
Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads 1-gen-2008 Governale, M; Pala, M; Konig, J
Transport Inefficiency in Branched-Out Mesoscopic Networks: An Analog of the Braess Paradox 1-gen-2012 Pala, M; Baltazar, S; Liu, P; Sellier, H; Hackens, B; Martins, F; Bayot, V; Wallart, X; Desplanque, L; Huant, S
Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy 1-gen-2015 Liu, P; Martins, F; Hackens, B; Desplanque, L; Wallart, X; Pala, M; Huant, S; Bayot, V; Sellier, H
Three-dimensional simulation of realistic single electron transistors 1-gen-2005 Fiori, G; Pala, M; Iannaccone, G
Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs 1-gen-2008 Poli, S; Pala, M; Poiroux, T; Deleonibus, S; Baccarani, G
Effect of dephasing on the current statistics of mesoscopic devices 1-gen-2004 Pala, M; Iannaccone, G
Nonequilibrium Josephson and Andreev current through interacting quantum dots 1-gen-2007 Pala, M; Governale, M; Konig, J
Suppression of weak antilocalization in GaxIn1-xAs/InP narrow quantum wires 1-gen-2006 Schapers, T; Guzenko, Va; Pala, M; Zulicke, U; Governale, M; Knobbe, J; Hardtdegen, H
Rashba spin precession in quantum-Hall edge channels 1-gen-2005 Pala, M; Governale, M; Zulicke, U; Iannaccone, G
3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity 1-gen-2009 Bescond, M; Lannoo, M; Michelini, F; Raymond, L; Pala, M
Local density of states in mesoscopic samples from scanning gate microscopy 1-gen-2008 Pala, M; Hackens, B; Martins, F; Sellier, H; Bayot, V; Huant, S; Ouisse, T
Imaging electron wave functions inside open quantum rings 1-gen-2007 Martins, F; Hackens, B; Pala, M; Ouisse, T; Sellier, H; Wallart, X; Bollaert, S; Cappy, A; Chevrier, J; Bayot, V; Huant, S
Prodotti della tipologia (ordinati per Data di deposito in Decrescente ordine): 6.841 a 6.860 di 46.066
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Tipologia
  • 1 Contributo su Rivista46065
  • 2 Contributo in Volume1
  • 3 Libro1
Autore
  • GIORDANI, Mario1634
  • COBAL, Marina1594
  • MONZANI, Simone1131
  • GIUGLIARELLI, Gilberto756
  • CAUZ, Diego741
  • DE LOTTO, Barbara738
  • SANTI, Lorenzo Gianni660
  • PANIZZO, Giancarlo654
  • PALESE, Alvisa650
  • SCURI, Fabrizio565
Data di pubblicazione
  • In corso di stampa30
  • 2020 - 202612304
  • 2010 - 201915230
  • 2000 - 200910526
  • 1990 - 19995843
  • 1980 - 19891783
  • 1970 - 1979315
  • 1960 - 196935
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  • Elsevier BV:PO Box 211, 1000 AE A...288
  • American Institute of Physics:2 H...269
  • Germany: Springer Verlag Germany101
  • Elsevier Science Limited:Oxford F...71
  • Elsevier Science Incorporated / N...60
  • Springer Verlag Germany:Tiergarte...57
  • Taylor & Francis Limited:Rankine ...56
  • Edizioni Minerva Medica:Corso Bra...52
  • S Karger AG:Allschwilerstrasse 10...48
  • Annals Publishing Company:4507 La...47
Rivista
  • PHYSICAL REVIEW LETTERS518
  • PHYSICS LETTERS. SECTION B478
  • THE EUROPEAN PHYSICAL JOURNAL. C,...442
  • JOURNAL OF HIGH ENERGY PHYSICS314
  • PHYSICAL REVIEW D, PARTICLES, FIE...305
  • NUCLEAR INSTRUMENTS & METHODS IN ...202
  • PHYSICAL REVIEW D149
  • PLOS ONE149
  • THE ASTROPHYSICAL JOURNAL148
  • IEEE TRANSACTIONS ON ELECTRON DEV...129
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