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Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders
2016-01-01 Strangio, Sebastiano; Palestri, Pierpaolo; Lanuzza, M.; Esseni, David; Crupi, F.; Selmi, Luca
Bias and Temperature Dependence of Gate and Substrate Currents in n-MOSFETs at Low Drain Voltage
1994-01-01 Esseni, David; Selmi, Luca; R., Bez; Sangiorgi, Enrico; B., Ricco
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool
2003-01-01 Palestri, Pierpaolo; Esseni, David; Abramo, Antonio; Clerc, R; Selmi, Luca
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors
2000-01-01 Palestri, Pierpaolo; Selmi, Luca; Sangiorgi, Enrico; M., Pavesi; F., Widdershoven
Characterization and Modeling of Hot-Carrier Luminescence in Silicon n+/n/n+ Devices
1995-01-01 Selmi, Luca; Mastrapasqua, M; Boulin, D. M.; Bude, J; Manfredi, M; Sangiorgi, Enrico; Pinto, M. R.
Characterization and Modeling of long term retention in SONOS Non Volatile Memories
2007-01-01 Arreghini, A; Akil, N; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors
2015-01-01 Scarbolo, Paolo; Accastelli, E.; Pittino, Federico; Ernst, T.; Guiducci, C.; Selmi, Luca
Characterization of Transient Effects in the S-Parameters of GaAs MESFETs by means of Pulsed Measurements
1994-01-01 Begin, M; Ghannouchi, F. M.; Beauregard, F; Selmi, Luca; Ricco, B; Borelli, V.
Comparative Analysis of Basic Transport Properties in the Inversion Layer of Bulk and SOI MOSFETs: a Monte-Carlo Study
2004-01-01 Lucci, Luca; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Comparison of Advanced Transport Models for Nanoscale nMOSFETS
2009-01-01 Palestri, Pierpaolo; Alexander, C; Asenov, A; Baccarani, G; Bournel, A; Braccioli, M; Cheng, B; Dollfus, P; Esposito, A; Esseni, David; Ghetti, A; Fiegna, C; Fiori, G; AUBRY FORTUNA, V; Iannaccone, G; Martinez, A; Majkusiak, B; Monfray, B; Reggiani, S; Riddet, C; SAINT MARTIN, J; Sangiorgi, E; Schenk, A; Selmi, Luca; Silvestri, L; Walczak, J.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders | 1-gen-2016 | Strangio, Sebastiano; Palestri, Pierpaolo; Lanuzza, M.; Esseni, David; Crupi, F.; Selmi, Luca | |
Bias and Temperature Dependence of Gate and Substrate Currents in n-MOSFETs at Low Drain Voltage | 1-gen-1994 | Esseni, David; Selmi, Luca; R., Bez; Sangiorgi, Enrico; B., Ricco | |
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool | 1-gen-2003 | Palestri, Pierpaolo; Esseni, David; Abramo, Antonio; Clerc, R; Selmi, Luca | |
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors | 1-gen-2000 | Palestri, Pierpaolo; Selmi, Luca; Sangiorgi, Enrico; M., Pavesi; F., Widdershoven | |
Characterization and Modeling of Hot-Carrier Luminescence in Silicon n+/n/n+ Devices | 1-gen-1995 | Selmi, Luca; Mastrapasqua, M; Boulin, D. M.; Bude, J; Manfredi, M; Sangiorgi, Enrico; Pinto, M. R. | |
Characterization and Modeling of long term retention in SONOS Non Volatile Memories | 1-gen-2007 | Arreghini, A; Akil, N; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J. | |
Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors | 1-gen-2015 | Scarbolo, Paolo; Accastelli, E.; Pittino, Federico; Ernst, T.; Guiducci, C.; Selmi, Luca | |
Characterization of Transient Effects in the S-Parameters of GaAs MESFETs by means of Pulsed Measurements | 1-gen-1994 | Begin, M; Ghannouchi, F. M.; Beauregard, F; Selmi, Luca; Ricco, B; Borelli, V. | |
Comparative Analysis of Basic Transport Properties in the Inversion Layer of Bulk and SOI MOSFETs: a Monte-Carlo Study | 1-gen-2004 | Lucci, Luca; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
Comparison of Advanced Transport Models for Nanoscale nMOSFETS | 1-gen-2009 | Palestri, Pierpaolo; Alexander, C; Asenov, A; Baccarani, G; Bournel, A; Braccioli, M; Cheng, B; Dollfus, P; Esposito, A; Esseni, David; Ghetti, A; Fiegna, C; Fiori, G; AUBRY FORTUNA, V; Iannaccone, G; Martinez, A; Majkusiak, B; Monfray, B; Reggiani, S; Riddet, C; SAINT MARTIN, J; Sangiorgi, E; Schenk, A; Selmi, Luca; Silvestri, L; Walczak, J. |
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Tipologia
- 4 Contributo in Atti di Convegno ... 199
- 4 Contributo in Atti di Convegno ... 199
Data di pubblicazione
- 2020 - 2022 3
- 2010 - 2019 74
- 2000 - 2009 84
- 1990 - 1999 36
- 1987 - 1989 2
Editore
- IEEE 37
- Institute of Electrical and Elect... 3
- American Institute of Physics Inc. 1
- DIEGM - Università degli Studi di... 1
- Libreria Progetto 1
- Univeristy of Wuppertal 1
Rivista
- PROCEEDINGS OF THE EUROPEAN SOLID... 2
- AIP CONFERENCE PROCEEDINGS 1
- ECS TRANSACTIONS 1
- MICROELECTRONIC ENGINEERING 1
Keyword
- FinFETs 2
- Gallium arsenide 2
- III-V compounds 2
- Logic gates 2
- nanoribbon 2
- Scattering 2
- Silicon 2
- TCAD 2
- AC 1
- admittance 1
Lingua
- eng 131
- ita 1
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- reserved 117
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- restricted 10
- open 1