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Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks
2010-01-01 Bufler, F. M.; AUBRY FORTUNA, V; Bournel, A; Braccioli, M; Dollfus, P; Esseni, David; Fiegna, C; Gamizk, F; DE MICHIELIS, Marco; Palestri, Pierpaolo; SAINT MARTIN, J; Sampedrok, C; Sangiorgi, E; Selmi, Luca; Toniutti, Paolo
Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS
2008-01-01 L., Bizjak; N., Da Dalt; P., Thurner; R., Nonis; Palestri, Pierpaolo; Selmi, Luca
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells
2016-01-01 Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele
Corner Effect and Local Volume Inversion in SiNW FETs
2011-01-01 DE MICHIELIS, Luca; Moselund, K. E.; Selmi, Luca; Ionescu, A. M.
Correlation between Substrate Hot Electron Energy and Homogeneous Degradation in n-MOSFETs
1994-01-01 Selmi, Luca; Fiegna, C; Bez, R.
Coupled Monte Carlo Simulation of Si and SiO2 Transport in MOS Capacitors
2000-01-01 Palestri, Pierpaolo; Selmi, Luca; M., Pavesi; F., Widdershoven; Sangiorgi, Enrico
Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime
2002-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; Fausto, Piazza
Demonstration of Improved Transient Response of Inverters with Steep Slope Strained Si NW TFETs by Reduction of TAT with Pulsed I-V and NW Scaling
2013-01-01 L., Knoll; Q. T., Zhao; A., Nichau; S., Richter; G. V., Luong; S., Trellenkamp; A., Schäfer; Selmi, Luca; K. K., Bourdelle; S., Mantl
Derivation and Numerical Verification of a Compact Analytical Model for the AC Admittance Response of Nanoelectrodes, Suitable for the Analysis and Optimization of Impedance Biosensors
2015-01-01 Pittino, Federico; Scarbolo, Paolo; Widdershoven, Frans; Selmi, Luca
Design and evaluation of mixed 3T-4T FinFET stacks for leakage reduction
2009-01-01 Agostinelli, M; Alioto, M; Esseni, David; Selmi, Luca
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks | 1-gen-2010 | Bufler, F. M.; AUBRY FORTUNA, V; Bournel, A; Braccioli, M; Dollfus, P; Esseni, David; Fiegna, C; Gamizk, F; DE MICHIELIS, Marco; Palestri, Pierpaolo; SAINT MARTIN, J; Sampedrok, C; Sangiorgi, E; Selmi, Luca; Toniutti, Paolo | |
| Comprehensive Behavioral modeling of conventional and Dual-Tuning PLLS | 1-gen-2008 | L., Bizjak; N., Da Dalt; P., Thurner; R., Nonis; Palestri, Pierpaolo; Selmi, Luca | |
| Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells | 1-gen-2016 | Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele | |
| Corner Effect and Local Volume Inversion in SiNW FETs | 1-gen-2011 | DE MICHIELIS, Luca; Moselund, K. E.; Selmi, Luca; Ionescu, A. M. | |
| Correlation between Substrate Hot Electron Energy and Homogeneous Degradation in n-MOSFETs | 1-gen-1994 | Selmi, Luca; Fiegna, C; Bez, R. | |
| Coupled Monte Carlo Simulation of Si and SiO2 Transport in MOS Capacitors | 1-gen-2000 | Palestri, Pierpaolo; Selmi, Luca; M., Pavesi; F., Widdershoven; Sangiorgi, Enrico | |
| Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime | 1-gen-2002 | Driussi, Francesco; Esseni, David; Selmi, Luca; Fausto, Piazza | |
| Demonstration of Improved Transient Response of Inverters with Steep Slope Strained Si NW TFETs by Reduction of TAT with Pulsed I-V and NW Scaling | 1-gen-2013 | L., Knoll; Q. T., Zhao; A., Nichau; S., Richter; G. V., Luong; S., Trellenkamp; A., Schäfer; Selmi, Luca; K. K., Bourdelle; S., Mantl | |
| Derivation and Numerical Verification of a Compact Analytical Model for the AC Admittance Response of Nanoelectrodes, Suitable for the Analysis and Optimization of Impedance Biosensors | 1-gen-2015 | Pittino, Federico; Scarbolo, Paolo; Widdershoven, Frans; Selmi, Luca | |
| Design and evaluation of mixed 3T-4T FinFET stacks for leakage reduction | 1-gen-2009 | Agostinelli, M; Alioto, M; Esseni, David; Selmi, Luca |
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Tipologia
- 4 Contributo in Atti di Convegno ... 206
- 4 Contributo in Atti di Convegno ... 199
- 1 Contributo su Rivista 166
- 1 Contributo su Rivista::1.1 Arti... 166
- 2 Contributo in Volume 7
- 2 Contributo in Volume::2.1 Contr... 7
- 4 Contributo in Atti di Convegno ... 7
- 5 Altro 6
- 7 Curatele 5
- 7 Curatele::7.1 Curatela 5
- 5 Altro::5.12 Altro 4
- 3 Libro 3
- 3 Libro::3.1 Monografia o trattat... 3
- 5 Altro::5.11 Software 2
- 6 Brevetti 2
- 6 Brevetti::6.1 Brevetto 2
Data di pubblicazione
- 2020 - 2023 9
- 2010 - 2019 156
- 2000 - 2009 159
- 1990 - 1999 63
- 1987 - 1989 8
Editore
- IEEE 38
- IEEE / Institute of Electrical an... 7
- Institute of Electrical and Elect... 3
- Wiley 3
- Elsevier BV:PO Box 211, 1000 AE A... 2
- Society for Industrial and Applie... 2
- American Institute of Physics Inc. 1
- Cambridge University Press 1
- DIEGM - Università degli Studi di... 1
- Elsevier Science BV 1
Rivista
- IEEE TRANSACTIONS ON ELECTRON DEV... 66
- SOLID-STATE ELECTRONICS 31
- IEEE ELECTRON DEVICE LETTERS 11
- MICROELECTRONIC ENGINEERING 9
- ECS TRANSACTIONS 3
- IEEE JOURNAL OF SOLID-STATE CIRCUITS 3
- IEEE TRANSACTIONS ON CIRCUITS AND... 3
- JOURNAL OF APPLIED PHYSICS 3
- IEEE TRANSACTIONS ON DEVICE AND M... 2
- IEEE TRANSACTIONS ON NANOTECHNOLOGY 2
Keyword
- TCAD 7
- Monte Carlo 6
- Electrical and Electronic Enginee... 5
- Electronic 5
- Optical and Magnetic Materials 5
- Simulation 5
- Tunnel-FET 5
- Condensed Matter Physics 4
- Modeling 4
- Charge trapping 3
Lingua
- eng 286
- ita 3
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- partially open 12
- open 6