We present a simulation study addressing the physics and design of ferroelectric MOSFETs and, in particular, we argue that a retrograde channel doping profile may help obtain a subthreshold swing well below 60mV/dec. Our analysis suggests that ferroelectric MOSFETs should be operated at gate voltages smaller than those triggering the hysteretic behavior, and have the potential to realize on current to off current ratios of 106 with a voltage swing as small as 0.2V , which is the ultimate goal for small slope transistors.
Supersteep Retrograde Doping in Ferroelectric MOSFETs for sub-60mV/dec Subthreshold Swing
ROLLO, TOMMASO;ESSENI, David
2016-01-01
Abstract
We present a simulation study addressing the physics and design of ferroelectric MOSFETs and, in particular, we argue that a retrograde channel doping profile may help obtain a subthreshold swing well below 60mV/dec. Our analysis suggests that ferroelectric MOSFETs should be operated at gate voltages smaller than those triggering the hysteretic behavior, and have the potential to realize on current to off current ratios of 106 with a voltage swing as small as 0.2V , which is the ultimate goal for small slope transistors.File in questo prodotto:
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