We present a simulation study addressing the physics and design of ferroelectric MOSFETs and, in particular, we argue that a retrograde channel doping profile may help obtain a subthreshold swing well below 60mV/dec. Our analysis suggests that ferroelectric MOSFETs should be operated at gate voltages smaller than those triggering the hysteretic behavior, and have the potential to realize on current to off current ratios of 106 with a voltage swing as small as 0.2V , which is the ultimate goal for small slope transistors.

Supersteep Retrograde Doping in Ferroelectric MOSFETs for sub-60mV/dec Subthreshold Swing

ROLLO, TOMMASO;ESSENI, David
2016-01-01

Abstract

We present a simulation study addressing the physics and design of ferroelectric MOSFETs and, in particular, we argue that a retrograde channel doping profile may help obtain a subthreshold swing well below 60mV/dec. Our analysis suggests that ferroelectric MOSFETs should be operated at gate voltages smaller than those triggering the hysteretic behavior, and have the potential to realize on current to off current ratios of 106 with a voltage swing as small as 0.2V , which is the ultimate goal for small slope transistors.
2016
978-1-5090-2969-3
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/1090631
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